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BCW60のメーカーはSiemens Semiconductor Groupです、この部品の機能は「NPN Silicon AF Transistors (For AF input stages and driver applications High current gain)」です。 |
部品番号 | BCW60 |
| |
部品説明 | NPN Silicon AF Transistors (For AF input stages and driver applications High current gain) | ||
メーカ | Siemens Semiconductor Group | ||
ロゴ | |||
このページの下部にプレビューとBCW60ダウンロード(pdfファイル)リンクがあります。 Total 9 pages
NPN Silicon AF Transistors
q For AF input stages and driver applications
q High current gain
q Low collector-emitter saturation voltage
q Low noise between 30 Hz and 15 kHz
q Complementary types: BCW 61, BCX 71 (PNP)
BCW 60
BCX 70
Type
BCW 60 A
BCW 60 B
BCW 60 C
BCW 60 D
BCW 60 FF
BCW 60 FN
BCX 70 G
BCX 70 H
BCX 70 J
BCX 70 K
Marking
AAs
ABs
ACs
ADs
AFs
ANs
AGs
AHs
AJs
AKs
Ordering Code
(tape and reel)
Q62702-C1517
Q62702-C1497
Q62702-C1476
Q62702-C1477
Q62702-C1529
Q62702-C1567
Q62702-C1539
Q62702-C1481
Q62702-C1552
Q62702-C1571
Pin Configuration
123
BEC
Package1)
SOT-23
1) For detailed information see chapter Package Outlines.
Semiconductor Group
1
5.91
1 Page BCW 60
BCX 70
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC characteristics
Collector-emitter breakdown voltage
V(BR)CE0
V
IC = 10 mA
BCW 60, BCW 60 FF
32 –
–
BCX 70
45 –
–
Collector-base breakdown voltage
IC = 10 µA
BCW 60, BCW 60 FF
BCX 70
V(BR)CB0
32
45
–
–
–
–
Emitter-base breakdown voltage
IE = 1 µA
V(BR)EB0 5 – –
Collector cutoff current
ICB0
VCB = 32 V
BCW 60, BCW 60 FF
– – 20 nA
VCB = 45 V
BCX 70
– – 20 nA
VCB = 32 V, TA = 150 ˚C BCW 60, BCW 60 FF
– – 20 µA
VCB = 45 V, TA = 150 ˚C BCX 70
– – 20 µA
Emitter cutoff current
VEB = 4 V
IEB0 – – 20 nA
DC current gain 1)
IC = 10 µA, VCE = 5 V
BCW 60 A, BCX 70 G
BCW 60 B, BCX 70 H
BCW 60 FF, BCW 60 C, BCX 70 J
BCW 60 FN, BCW 60 D, BCX 70 K
IC = 2 mA, VCE = 5 V
BCW 60 A, BCX 70 G
BCW 60 B, BCX 70 H
BCW 60 FF, BCW 60 C, BCX 70 J
BCW 60 FN, BCW 60 D, BCX 70 K
IC = 50 mA, VCE = 1 V
BCW 60 A, BCX 70 G
BCW 60 B, BCX 70 H
BCW 60 FF, BCW 60 C, BCX 70 J
BCW 60 FN, BCW 60 D, BCX 70 K
hFE
–
20 140 –
20 200 –
40 300 –
100 460 –
120 170 220
180 250 310
250 350 460
380 500 630
50 –
70 –
90 –
100 –
–
–
–
–
1) Pulse test: t ≤ 300 µs, D ≤ 2 %.
Semiconductor Group
3
3Pages BCW 60
BCX 70
Total power dissipation Ptot = f (TA*; TS)
* Package mounted on epoxy
Collector-base capacitance CCB0 = f (VCB0)
Emitter-base capacitance CEB0 = f (VEB0)
Permissible pulse load Ptot max/Ptot DC = f (tp)
Transition frequency fT = f (IC)
VCE = 5 V
Semiconductor Group
6
6 Page | |||
ページ | 合計 : 9 ページ | ||
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PDF ダウンロード | [ BCW60 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
BCW60 | NPN general purpose transistors | NXP Semiconductors |
BCW60 | NPN Silicon AF Transistors (For AF input stages and driver applications High current gain) | Siemens Semiconductor Group |
BCW60 | NPN Silicon AF Transistors | Infineon Technologies AG |
BCW60 | Surface mount Si-Epitaxial PlanarTransistors | Diotec Semiconductor |