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Datasheet BCW32 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | BCW32 | NPN General Purpose Amplifier NPN General Purpose Amplifier
FEATURES
z Low current(max.100mA). z Low voltage(max.32V).
Pb
Lead-free
Production specification
BCW31/32/33
APPLICATIONS
z General purpose switching and amplification.
ORDERING INFORMATION
Type No.
Marking
BCW31 BCW32 BCW33
D1 D2 D3
SOT-23
Package Code
SOT-23 |  Galaxy Microelectronics | amplifier |
| 2 | BCW32 | EPITAXIAL PLANAR NPN TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.
FEATURES Complementary to BCW29/30.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction T |  KEC | transistor |
| 3 | BCW32 | GENERAL PURPOSE TRANSISTOR MAXIMUM RATINGS
Rating
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage
—Collector Current Continuous
Symbol VCEO VCBO Vebo
ic
THERMAL CHARACTERISTICS
Characteristic
Symbol
•Total Device Dissipation, Ta = 25°C Derate above 25°C
PD
Storage Temperature
Tstg
•Therm |  Motorola Semiconductors | transistor |
| 4 | BCW32 | NPN General Purpose Transistors SMD Type
TransistIoCrs
NPN General Purpose Transistors BCW31,BCW32,BCW33
Features
Low current (max. 100 mA). Low voltage (max. 32 V).
+0.12.4 -0.1
SOT-23
2.9+0.1 -0.1
0.4+0.1 -0.1
3
12 0.95+0.1
-0.1
1.9+0.1 -0.1
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Collector-base voltage
VCBO
|  Kexin | transistor |
| 5 | BCW32 | NPN EPITAXIAL SILICON TRANSISTOR |  Samsung semiconductor | transistor |
BCW Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | BCW29 | EPITAXIAL PLANAR PNP TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.
FEATURES ᴌComplementary to BCW31/32
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
VCBO
-30
Collector-Emitter Voltage
VCEO
-20
Emitter-Base Voltage
VEBO
-5
Collector Current KEC transistor | | |
| 2 | BCW29 | PNP General Purpose Transistors SMD Type
TransistIoCrs
PNP General Purpose Transistors BCW29,BCW30
Features
Low current (max. 100 mA). Low voltage (max. 32 V).
+0.12.4 -0.1
SOT-23
2.9+0.1 -0.1
0.4+0.1 -0.1
3
12 0.95+0.1
-0.1
1.9+0.1 -0.1
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Collector-base voltage
VCBO
Colle Kexin transistor | | |
| 3 | BCW29 | Silicon Planar Epitaxial Transistor Philips transistor | | |
| 4 | BCW29 | GENERAL PURPOSE TRANSISTOR BCW29,30
CASE 318-02/03, STYLE 6
SOT-23 (TO-236AA/AB)
GENERAL PURPOSE TRANSISTOR
PNP SILICON
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage
—Collector Current Continuous
Symbol vCEO VCBO vESO
ic
THERMAL CHARACTERISTICS
Characteristic
*Total Device Motorola Semiconductors transistor | | |
| 5 | BCW29 | SILICON PLANAR EPITAXIAL TRANSISTORS Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
BCW29 BCW30
SILICON PLANAR EPITAXIAL TRANSISTORS
P–N–P transistors
Marking BCW29 = C1 BCW30 = C2
PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm
Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR
3
1
2  CDIL transistor | | |
| 6 | BCW29 | PNP general purpose transistors DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
BCW29; BCW30 PNP general purpose transistors
Product specification Supersedes data of 1997 Sep 03 1999 Apr 13
Philips Semiconductors
Product specification
PNP general purpose transistors
FEATURES • Low current (max. 100 mA) • Low v  NXP Semiconductors transistor | | |
| 7 | BCW29 | Surface mount Si-Epitaxial PlanarTransistors BCW29, BCW30
BCW29, BCW30
PNP
Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage
Version 2006-07-28
2.9 ±0.1 0.4 3
Type Code
1
2
1.1
1.9
Dimensions - Maße [mm] 1=B 2=E 3=C
2.5 max 1.3±0.1
Power dissipation – Verlus  Diotec Semiconductor transistor | |
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