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PDF BCW29LT1 Data sheet ( Hoja de datos )
| Número de pieza | BCW29LT1 | |
| Descripción | General Purpose Transistors | |
| Fabricantes | Leshan Radio Company | |
| Logotipo |  |
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LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
3
COLLECTOR
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
V CEO
V CBO
V EBO
IC
2
BASE
Value
–32
–32
–5.0
–100
1
EMITTER
Unit
Vdc
Vdc
Vdc
mAdc
BCW29LT1
BCW30LT1
3
1
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
RθJA
PD
RθJA
TJ , Tstg
Max Unit
225 mW
1.8 mW/°C
556 °C/W
300 mW
2.4 mW/°C
417
–55 to +150
°C/W
°C
DEVICE MARKING
BCW29LT1 = C1; BCW30LT1 = C2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = –2.0mAdc, IE = 0 )
Collector–Emitter Breakdown Voltage
(I C = –100 µAdc, V EB = 0)
Collector–Emitter Breakdown Voltage
(I C = –10 µAdc, I C = 0)
Emitter–Base Breakdown Voltage
(I E = –10 µAdc, I C = 0)
Collector Cutoff Current
(VCB = –32 Vdc, IE = 0 )
(VCB = –32 Vdc, IE = 0, TA = 100°C)
V (BR)CEO
V (BR)CES
V (BR)CBO
V (BR)EBO
I CBO
–32
–32
–32
–5.0
—
—
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Max Unit
— Vdc
— Vdc
— Vdc
— Vdc
–100
–10
nAdc
µAdc
M7–1/6
1 page  
LESHAN RADIO COMPANY, LTD.
TYPICAL DYNAMIC CHARACTERISTICS
BCW29LT1 BCW30LT1
500
300
200
100
70
50
30
20
10
7.0
5.0
1.0
V CC= 3.0 V
IC /I B= 10
T J= 25°C
td @ V =BE(off) 0.5 V
tr
2.0 3.0 5.0 7.0 10
20 30
50 70 100
I C , COLLECTOR CURRENT (mA)
Figure 11. Turn–On Time
1000
V = –3.0 V
700
500
CC
IC /I B= 10
300
t s IB1=IB2
T J= 25°C
200
100
70
50 t f
30
20
10
–1.0
–2.0 –3.0 –5.0 –7.0 –10
–20 –30 –50 –70 –100
I C , COLLECTOR CURRENT (mA)
Figure 12. Turn–Off Time
500
T J = 25°C
300 V CE=20 V
5.0 V
200
100
70
50
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20 30 50
I C , COLLECTOR CURRENT (mA)
Figure 13. Current–Gain — Bandwidth Product
10.0
T J= 25°C
7.0
C ib
5.0
3.0
2.0 C ob
1.0
0.05 0.1
0.2
0.5 1.0 2.0
5.0 10 20
V R , REVERSE VOLTAGE (VOLTS)
Figure 14. Capacitance
50
20
V = 10 Vdc
CE
10 f = 1.0 kHz
7.0
BCW29LT1
T A = 25°C
5.0 h fe ~~ 200
3.0 @ I C= -1.0 mA
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.2
0.5 1.0 2.0
5.0 10 20
50
I C , COLLECTOR CURRENT (mA)
Figure 17. Input Impedance
100
200
VCE= 10 Vdc
100 f = 1.0 kHz
70
50
T A= 25°C
BCW29LT1
30
20
h fe ~~ 200
@ I C= 1.0 mA
10
7.0
5.0
3.0
2.0
0.1
0.2
0.5 1.0 2.0
5.0 10 20
I C , COLLECTOR CURRENT (mA)
Figure 18. Output Admittance
50 100
M7–5/6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet BCW29LT1.PDF ] | |
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