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BCV61A の電気的特性と機能

BCV61AのメーカーはInfineon Technologies AGです、この部品の機能は「NPN Silicon Double Transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 BCV61A
部品説明 NPN Silicon Double Transistor
メーカ Infineon Technologies AG
ロゴ Infineon Technologies AG ロゴ 




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BCV61A Datasheet, BCV61A PDF,ピン配置, 機能
NPN Silicon Double Transistor
 To be used as a current mirror
 Good thermal coupling and VBE matching
 High current gain
 Low collector-emitter saturation voltage
C1 (2)
Tr.1
4
C2 (1)
Tr.2
BCV61
3
2
1 VPS05178
Type
BCV61A
BCV61B
BCV61C
Marking
1Js
1Ks
1Ls
E1 (3)
E2 (4)
EHA00012
Pin Configuration
1 = C2 2 = C1 3 = E1 4 = E2
1 = C2 2 = C1 3 = E1 4 = E2
1 = C2 2 = C1 3 = E1 4 = E2
Package
SOT143
SOT143
SOT143
Maximum Ratings
Parameter
Collector-emitter voltage
(transistor T1)
Collector-base voltage (open emitter)
(transistor T1)
Emitter-base voltage
DC collector current
Peak collector current
Base peak current (transistor T1)
Total power dissipation, TS = 99 °C
Junction temperature
Storage temperature
Symbol
VCEO
VCBO
VEBS
IC
ICM
IBM
Ptot
Tj
Tstg
Value
30
30
6
100
200
200
300
150
-65 ... 150
Thermal Resistance
Junction - soldering point1)
RthJS
1For calculation of RthJA please refer to Application Note Thermal Resistance
170
Unit
V
mA
mW
°C
K/W
1 Jul-10-2001

1 Page





BCV61A pdf, ピン配列
BCV61
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
Characteristics
Base-emitter forward voltage
IE = 10 µA
IE = 250 mA
Matching of transistor T1 and transistor T2
at IE2 = 0.5mA and VCE1 = 5V
TA = 25 °C
TA = 150 °C
VBES
0.4 -
V
-
- - 1.8
IC1 / IC2
-
- --
0.7 - 1.3
0.7 - 1.3
Thermal coupling of transistor T1 and
transistor T2 1) T1: VCE = 5V
Maximum current of thermal stability of IC1
IE2
- 5 - mA
AC characteristics for transistor T1
Transition frequency
IC = 10 mA, VCE = 5 V, f = 100 MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
Noise figure
IC = 200 µA, VCE = 5 V, RS = 2 k ,
f = 1 kHz,  f = 200 Hz
Short-circuit input impedance
IC = 1 mA, VCE = 10 V, f = 1 kHz
Open-circuit reverse voltage transf.ratio
IC = 1 mA, VCE = 10 V, f = 1 kHz
Short-circuit forward current transf.ratio
IC = 1 mA, VCE = 10 V, f = 1 kHz
Open-circuit output admittance
IC = 1 mA, VCE = 10 V, f = 1 kHz
fT - 250 - MHz
Ccb - 3 - pF
Ceb - 8 -
F - 2 - dB
h11e
- 4.5 - k
h12e
- 2 - 10-4
h21e
100 - 900 -
h22e
- 30 - S
1) Witout emitter resistor. Device mounted on alumina 15mm x 16.5mm x 0.7mm
3
Jul-10-2001


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共有リンク

Link :


部品番号部品説明メーカ
BCV61

NPN general purpose double transistor

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NXP Semiconductors
BCV61

NPN Silicon Double Transistors (To be used as a current mirror Good thermal coupling and VBE matching)

Siemens Semiconductor Group
Siemens Semiconductor Group
BCV61

NPN Silicon Double Transistor

Infineon Technologies AG
Infineon Technologies AG
BCV61

NPN general purpose double transistor

Philips
Philips


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