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Datasheet BDX65 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | BDX65 | NPN SILICON DARLINGTONS |  ETC | data |
| 2 | BDX65 | Bipolar NPN Device BDX65
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.
38.61 (1.52) 39.12 (1.54)
0.97 (0.060) 1.10 (0.043)
29.9 (1.177) 30.4 (1.197)
22.23 (0.875) max |  Seme LAB | data |
| 3 | BDX65 | SILICON POWER TRANSISTOR SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BDX65
www.datasheet4u.com
DESCRIPTION ·With TO-3 package ·DARLINGTON ·Complement to type BDX64 APPLICATIONS ·Designed for power amplification and switching applications.
PINNING (See Fig.2) PIN 1 2 3 Base Emitter Col |  SavantIC | transistor |
| 4 | BDX65 | NPN SILICON DARLINGTONS POWER TRANSISTOR BDX65 – A – B – C NPN SILICON DARLINGTON POWER TRANSISTOR
The BDX65, BDX65A, BDX65 and BDX65C are mounted in TO-3 metal package. High current power darlingtons designed for power amplification and switching applications. The complementary PNP are BDX64, BDX64A, BDX64B, BDX64C. Compliance to Ro |  Comset Semiconductors | transistor |
| 5 | BDX65A | NPN SILICON DARLINGTONS | ETC | data |
BDX Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | BDX10 | Bipolar NPN Device
BDX10
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.
38.61 (1.52) 39.12 (1.54)
0.97 (0.060) 1.10 (0.043)
29.9 (1.177) 30.4 (1.19 Seme LAB data | | |
| 2 | BDX11 | Bipolar NPN Device BDX11
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.
38.61 (1.52) 39.12 (1.54)
0.97 (0.060) 1.10 (0.043)
29.9 (1.177) 30.4 (1.197)
22.23 (0.875) max Seme LAB data | | |
| 3 | BDX12 | Bipolar NPN Device in a Hermetically sealed TO3 Metal Package BDX12
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.
38.61 (1.52) 39.12 (1.54)
0.97 (0.060) 1.10 (0.043)
29.9 (1.177) 30.4 (1.197)
22.23 (0.875) max Seme LAB data | | |
| 4 | BDX14 | PNP SILICON TRANSISTOR/ EPITAXIAL BASE BDX14AA
MECHANICAL DATA Dimensions in mm
PNP SILICON TRANSISTOR, EPITAXIAL BASE
6.35 (0.250) 8.64 (0.340)
3.68 (0.145) rad. max.
3.61 (0.142) 3.86 (0.145) rad.
24.33 (0.958) 24.43 (0.962)
0.71 (0.028) 0.86 (0.034)
11.94 (0.470) 12.70 (0.500)
14.48 (0.570) 14.99 (0.590)
FEATURES:
• LF Larg Seme LAB transistor | | |
| 5 | BDX14A | Silicon PNP Power Transistor INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
BDX14A
DESCRIPTION ·Continuous Collector Current-IC= -4A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -55V(Min.)
APPLICATIONS ·Designed for LF Large Signal Power Amplification
and Medium Current Switching
 Inchange Semiconductor transistor | | |
| 6 | BDX14A | PNP SILICON TRANSISTOR/ EPITAXIAL BASE BDX14AA
MECHANICAL DATA Dimensions in mm
PNP SILICON TRANSISTOR, EPITAXIAL BASE
6.35 (0.250) 8.64 (0.340)
3.68 (0.145) rad. max.
3.61 (0.142) 3.86 (0.145) rad.
24.33 (0.958) 24.43 (0.962)
0.71 (0.028) 0.86 (0.034)
11.94 (0.470) 12.70 (0.500)
14.48 (0.570) 14.99 (0.590)
FEATURES:
• LF Larg Seme LAB transistor | | |
| 7 | BDX14AA | PNP SILICON TRANSISTOR/ EPITAXIAL BASE BDX14AA
MECHANICAL DATA Dimensions in mm
PNP SILICON TRANSISTOR, EPITAXIAL BASE
6.35 (0.250) 8.64 (0.340)
3.68 (0.145) rad. max.
3.61 (0.142) 3.86 (0.145) rad.
24.33 (0.958) 24.43 (0.962)
0.71 (0.028) 0.86 (0.034)
11.94 (0.470) 12.70 (0.500)
14.48 (0.570) 14.99 (0.590)
FEATURES:
• LF Larg Seme LAB transistor | |
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