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BUZ30A の電気的特性と機能

BUZ30AのメーカーはSiemens Semiconductor Groupです、この部品の機能は「SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)」です。


製品の詳細 ( Datasheet PDF )

部品番号 BUZ30A
部品説明 SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
メーカ Siemens Semiconductor Group
ロゴ Siemens Semiconductor Group ロゴ 




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BUZ30A Datasheet, BUZ30A PDF,ピン配置, 機能
BUZ 30A
SIPMOS ® Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
Pin 1
G
Pin 2
D
Pin 3
S
Type
BUZ 30A
VDS
200 V
ID
21 A
RDS(on)
0.13
Maximum Ratings
Parameter
Continuous drain current
TC = 26 °C
Pulsed drain current
TC = 25 °C
Avalanche current,limited by Tjmax
Avalanche energy,periodic limited by Tjmax
Avalanche energy, single pulse
ID = 21 A, VDD = 50 V, RGS = 25
L = 1.53 mH, Tj = 25 °C
Gate source voltage
Power dissipation
TC = 25 °C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Package
TO-220 AB
Symbol
ID
IDpuls
IAR
EAR
EAS
VGS
Ptot
Tj
Tstg
RthJC
RthJA
Ordering Code
C67078-S1303-A3
Values
21
84
21
12
Unit
A
mJ
450
± 20
125
-55 ... + 150
-55 ... + 150
1
75
E
55 / 150 / 56
V
W
°C
K/W
Semiconductor Group
1
07/96

1 Page





BUZ30A pdf, ピン配列
BUZ 30A
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Symbol
min.
Values
typ. max.
Dynamic Characteristics
Transconductance
VDS2 * ID * RDS(on)max, ID = 13.5 A
Input capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Output capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Reverse transfer capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Turn-on delay time
VDD = 30 V, VGS = 10 V, ID = 3 A
RGS = 50
Rise time
VDD = 30 V, VGS = 10 V, ID = 3 A
RGS = 50
Turn-off delay time
VDD = 30 V, VGS = 10 V, ID = 3 A
RGS = 50
Fall time
VDD = 30 V, VGS = 10 V, ID = 3 A
RGS = 50
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
6
-
-
-
-
-
-
-
15 -
1400 1900
280 400
130 200
30 45
70 110
250 320
90 120
Unit
S
pF
ns
Semiconductor Group
3
07/96


3Pages


BUZ30A 電子部品, 半導体
BUZ 30A
Typ. output characteristics
ID = ƒ(VDS)
parameter: tp = 80 µs
50
Ptot = 125W
A
l kj i h g
ID 40
35
30
25
20
15
10
5
0
0246
f
VGS [V]
a 4.0
b 4.5
e c 5.0
d 5.5
e 6.0
f 6.5
d g 7.0
h 7.5
i 8.0
c j 9.0
k 10.0
l 20.0
b
a
8 V 11
VDS
Typ. transfer characteristics ID = f (VGS)
parameter: tp = 80 µs
VDS2 x ID x RDS(on)max
45
A
ID 35
30
25
20
15
10
5
0
0 1 2 3 4 5 6 7 8 V 10
VGS
Typ. drain-source on-resistance
RDS (on) = ƒ(ID)
parameter: VGS
0.40
ab c d
e
RDS
0.32
(on)
0.28
0.24
0.20
0.16
0.12
0.08
f
g
h
j
i
k
l
VGS [V] =
0.04 a b c d e f
4.0 4.5 5.0 5.5 6.0 6.5
0.00
ghi j
7.0 7.5 8.0 9.0
kl
10.0 20.0
0 4 8 12 16 20 24 28 32 A 40
ID
Typ. forward transconductance gfs = f (ID)
parameter: tp = 80 µs,
VDS2 x ID x RDS(on)max
20
S
gfs 16
14
12
10
8
6
4
2
0
0 5 10 15 20 25 30 A 40
ID
Semiconductor Group
6
07/96

6 Page



ページ 合計 : 9 ページ
 
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共有リンク

Link :


部品番号部品説明メーカ
BUZ305

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

Siemens Semiconductor Group
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SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

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