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BUZ255のメーカーはSiemens Semiconductor Groupです、この部品の機能は「SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)」です。 |
部品番号 | BUZ255 |
| |
部品説明 | SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) | ||
メーカ | Siemens Semiconductor Group | ||
ロゴ | |||
このページの下部にプレビューとBUZ255ダウンロード(pdfファイル)リンクがあります。 Total 9 pages
BUZ 272
SIPMOS ® Power Transistor
• P channel
• Enhancement mode
• Avalanche rated
Pin 1
G
Pin 2
D
Pin 3
S
Type
BUZ 272
VDS
-100 V
ID
-15 A
RDS(on)
0.3 Ω
Maximum Ratings
Parameter
Continuous drain current
TC = 25 °C
Pulsed drain current
TC = 25 °C
Avalanche energy, single pulse
ID = -15 A, VDD = -25 V, RGS = 25 Ω
L = 1.93 mH, Tj = 25 °C
Gate source voltage
Power dissipation
TC = 25 °C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Package
TO-220 AB
Symbol
ID
IDpuls
EAS
VGS
Ptot
Tj
Tstg
RthJC
RthJA
Ordering Code
C67078-S1454-A2
Values
-15
Unit
A
-60
mJ
290
± 20
125
-55 ... + 150
-55 ... + 150
≤1
≤ 75
E
55 / 150 / 56
V
W
°C
K/W
Semiconductor Group
1
07/96
1 Page BUZ 272
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Symbol
min.
Values
typ. max.
Dynamic Characteristics
Transconductance
VDS≥ 2 * ID * RDS(on)max, ID = -9.5 A
Input capacitance
VGS = 0 V, VDS = -25 V, f = 1 MHz
Output capacitance
VGS = 0 V, VDS = -25 V, f = 1 MHz
Reverse transfer capacitance
VGS = 0 V, VDS = -25 V, f = 1 MHz
Turn-on delay time
VDD = -30 V, VGS = -10 V, ID = -2.9 A
RGS = 50 Ω
Rise time
VDD = -30 V, VGS = -10 V, ID = -2.9 A
RGS = 50 Ω
Turn-off delay time
VDD = -30 V, VGS = -10 V, ID = -2.9 A
RGS = 50 Ω
Fall time
VDD = -30 V, VGS = -10 V, ID = -2.9 A
RGS = 50 Ω
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
1.5
-
-
-
-
-
-
-
4.5 -
2000 2700
360 540
120 180
30 45
120 180
125 170
120 160
Unit
S
pF
ns
Semiconductor Group
3
07/96
3Pages BUZ 272
Typ. output characteristics
ID = ƒ(VDS)
parameter: tp = 80 µs
-34
Ptot = 125W
l
A
-28
ID
-24
-20
-16
-12
-8
VGS [V]
a -4.0
k b -4.5
c -5.0
d -5.5
j
e -6.0
f -6.5
ig
h
hi
-7.0
-7.5
-8.0
g j -9.0
k
f
l
e
-10.0
-20.0
d
-4 c
b
0a
0 -4 -8 -12 -16 -20 V -28
VDS
Typ. drain-source on-resistance
RDS (on) = ƒ(ID)
parameter: VGS
0.9 a b c d e f g h
Ω
i
RDS (on) 0.7
j
0.6
0.5
0.4
0.3
0.2
k
0.1
VGS [V] =
ab
c
d
e
f
ghi
j
k
-4.05 -5.0 -5.5 -6.0 -6.5 -7.0 -7.5 -8.0 -9.0 -10.0 -20.0
0.0
0 -4 -8 -12 -16 -20 A -28
ID
Typ. transfer characteristics ID = f (VGS)
parameter: tp = 80 µs
VDS≥2 x ID x RDS(on)max
-16
A
ID
-12
-10
-8
-6
-4
-2
0
0 -1 -2 -3 -4 -5 -6 -7 -8 V -10
VGS
Typ. forward transconductance gfs = f (ID)
parameter: tp = 80 µs,
VDS≥2 x ID x RDS(on)max
7.0
S
6.0
gfs 5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0 -2 -4 -6 -8 -10 -12 A -15
ID
Semiconductor Group
6
07/96
6 Page | |||
ページ | 合計 : 9 ページ | ||
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PDF ダウンロード | [ BUZ255 データシート.PDF ] |
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部品番号 | 部品説明 | メーカ |
BUZ25 | main rationgs | Siemens Semiconductor Group |
BUZ255 | SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) | Siemens Semiconductor Group |
BUZ255 | N-Channel MOSFET Transistor | Inchange Semiconductor |