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PDF BUZ271 Data sheet ( Hoja de datos )
| Número de pieza | BUZ271 | |
| Descripción | SIPMOS Power Transistor (P channel Enhancement mode Avalanche rated) | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BUZ271 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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SIPMOS ® Power Transistor
BUZ 255
Not for new design
• N channel
• Enhancement mode
• Avalanche-rated
Pin 1
G
Pin 2
D
Pin 3
S
Type
BUZ 255
VDS
200 V
ID
13 A
RDS(on)
0.24 Ω
Maximum Ratings
Parameter
Continuous drain current
TC = 31 °C
Pulsed drain current
TC = 25 °C
Avalanche current,limited by Tjmax
Avalanche energy,periodic limited by Tjmax
Avalanche energy, single pulse
ID = 13 A, VDD = 50 V, RGS = 25 Ω
L = 1.89 mH, Tj = 25 °C
Gate source voltage
Power dissipation
TC = 25 °C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Package
TO-220 AB
Symbol
ID
IDpuls
IAR
EAR
EAS
VGS
Ptot
Tj
Tstg
RthJC
RthJA
Ordering Code
C67078-S1406-A2
Values
13
52
13
9
Unit
A
mJ
200
± 20
95
-55 ... + 150
-55 ... + 150
≤ 1.32
75
E
55 / 150 / 56
V
W
°C
K/W
Semiconductor Group
1
07/96
1 page  
BUZ 255
Not for new design
Power dissipation
Ptot = ƒ(TC)
100
W
Ptot 80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 °C 160
TC
Safe operating area
ID = ƒ(VDS)
parameter: D = 0.01, TC = 25°C
10 2
A
I
D
10 1
tp = 16.0µs
100 µs
1 ms
10 0
10 -1
10 0
10 1
10 ms
DC
10 2 V
VDS
Drain current
ID = ƒ(TC)
parameter: VGS ≥ 10 V
14
A
12
ID 11
10
9
8
7
6
5
4
3
2
1
0
0 20 40 60 80 100 120 °C 160
TC
Transient thermal impedance
Zth JC = ƒ(tp)
parameter: D = tp / T
10 1
K/W
Z
thJC 10 0
10 -1
10 -2
D = 0.50
0.20
0.10
0.05
0.02
0.01
single pulse
10 -3
10 -7
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1 s 10 0
tp
Semiconductor Group
5
07/96
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet BUZ271.PDF ] | |
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