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BUZ111のメーカーはSiemens Semiconductor Groupです、この部品の機能は「SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated)」です。 |
部品番号 | BUZ111 |
| |
部品説明 | SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated) | ||
メーカ | Siemens Semiconductor Group | ||
ロゴ | |||
このページの下部にプレビューとBUZ111ダウンロード(pdfファイル)リンクがあります。 Total 8 pages
SIPMOS ® Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
• dv/dt rated
• 175°C operating temperature
• also in SMD available
Type
BUZ111S
VDS
55 V
ID
80 A
BUZ111S
SPP80N05
Pin 1
G
Pin 2
D
Pin 3
S
RDS(on)
0.008 Ω
Package
TO-220 AB
Ordering Code
Q67040-S4003-A2
Maximum Ratings
Parameter
Continuous drain current
TC = 100 °C
Pulsed drain current
TC = 25 °C
Avalanche energy, single pulse
ID = 80 A, VDD = 25 V, RGS = 25 Ω
L = 220 µH, Tj = 25 °C
Avalanche current,limited by Tjmax
Avalanche energy,periodic limited by Tjmax
Reverse diode dv/dt
IS = 80 A, VDS = 40 V, diF/dt = 200 A/µs
Tjmax = 175 °C
Gate source voltage
Power dissipation
TC = 25 °C
Symbol
ID
IDpuls
EAS
IAR
EAR
dv/dt
VGS
Ptot
Values
80
320
700
80
25
6
± 20
250
Unit
A
mJ
A
mJ
kV/µs
V
W
Semiconductor Group
1
28/Jan/1998
1 Page BUZ111S
SPP80N05
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Symbol
min.
Dynamic Characteristics
Transconductance
VDS≥ 2 * ID * RDS(on)max, ID = 80 A
Input capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Output capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Reverse transfer capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Turn-on delay time
VDD = 30 V, VGS = 10 V, ID = 80 A
RG = 2.4 Ω
Rise time
VDD = 30 V, VGS = 10 V, ID = 80 A
RG = 2.4 Ω
Turn-off delay time
VDD = 30 V, VGS = 10 V, ID = 80 A
RG = 2.4 Ω
Fall time
VDD = 30 V, VGS = 10 V, ID = 80 A
RG = 2.4 Ω
Gate charge at threshold
VDD = 40 V, ID ≥ 0.1 A, VGS =0 to 1 V
Gate charge at 7.0 V
VDD = 40 V, ID = 80 A, VGS =0 to 7 V
Gate charge total
VDD = 40 V, ID = 80 A, VGS =0 to 10 V
Gate plateau voltage
VDD = 40 V, ID = 80 A
Semiconductor Group
gfs
Ciss
Coss
Crss
td(on)
30
-
-
-
-
tr
td(off)
-
-
tf
Qg(th)
Qg(7)
Qg(total)
V(plateau)
-
-
-
-
-
3
Values
typ.
max.
Unit
-
3600
-
4500
S
pF
1100
1375
550 690
ns
25 37
30 45
65 95
40 60
nC
3.3 5
95 140
125 185
5.45 -
V
28/Jan/1998
3Pages BUZ111S
SPP80N05
Typ. output characteristics
ID = ƒ(VDS)
parameter: tp = 80 µs , Tj = 25 °C
180 Ptot = 250W
l kj i h g
A
ID 140
120
100
80
60
40
f
VGS [V]
a 4.0
b
ec
4.5
5.0
d 5.5
e 6.0
f 6.5
d
g 7.0
h 7.5
i 8.0
cj
k
9.0
10.0
l 20.0
b
20
a
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V
VDS
5.0
Typ. transfer characteristics ID = f (VGS)
parameter: tp = 80 µs
VDS≥2 x ID x RDS(on)max
100
Typ. drain-source on-resistance
RDS (on) = ƒ(ID)
parameter: tp = 80 µs, Tj = 25 °C
0.026
Ω
0.022
RDS (on0).020
a
bcde
0.018
0.016
0.014
0.012
0.010
0.008
0.006
f
g
h
ji
k
0.004
0.002
0.000
VGS [V] =
ab
4.05 5.0
c
5.5
0 20 40
def ghi j k
6.0 6.5 7.0 7.5 8.0 9.0 10.0 20.0
60 80 100 120 140 A 180
ID
IA
D
60
40
20
0
0 1 2 3 4 5 6 7 8 V 10
VGS
Semiconductor Group
6
28/Jan/1998
6 Page | |||
ページ | 合計 : 8 ページ | ||
|
PDF ダウンロード | [ BUZ111 データシート.PDF ] |
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