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BUZ110SのメーカーはSiemens Semiconductor Groupです、この部品の機能は「SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated)」です。 |
部品番号 | BUZ110S |
| |
部品説明 | SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated) | ||
メーカ | Siemens Semiconductor Group | ||
ロゴ | |||
このページの下部にプレビューとBUZ110Sダウンロード(pdfファイル)リンクがあります。 Total 8 pages
SIPMOS ® Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
• dv/dt rated
• 175°C operating temperature
• also in SMD available
Type
BUZ 110 S
VDS
55 V
ID
80 A
BUZ 110 S
SPP80N05
Pin 1
G
Pin 2
D
Pin 3
S
RDS(on)
0.012 Ω
Package
TO-220 AB
Ordering Code
Q67040-S4005-A2
Maximum Ratings
Parameter
Continuous drain current
TC = 25 °C
TC = 100 °C
Pulsed drain current
TC = 25 °C
Avalanche energy, single pulse
ID = 80 A, VDD = 25 V, RGS = 25 Ω
L = 144 µH, Tj = 25 °C
Avalanche current,limited by Tjmax
Avalanche energy,periodic limited by Tjmax
Reverse diode dv/dt
IS = 80 A, VDS = 40 V, diF/dt = 200 A/µs
Tjmax = 175 °C
Gate source voltage
Power dissipation
TC = 25 °C
Symbol
ID
IDpuls
EAS
IAR
EAR
dv/dt
VGS
Ptot
Values
80
66
320
460
80
20
6
± 20
200
Unit
A
mJ
A
mJ
kV/µs
V
W
Semiconductor Group
1
28/Jan/1998
1 Page BUZ 110 S
SPP80N05
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Symbol
min.
Dynamic Characteristics
Transconductance
VDS≥ 2 * ID * RDS(on)max, ID = 66 A
Input capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Output capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Reverse transfer capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Turn-on delay time
VDD = 30 V, VGS = 10 V, ID = 80 A
RG = 3.9 Ω
Rise time
VDD = 30 V, VGS = 10 V, ID = 80 A
RG = 3.9 Ω
Turn-off delay time
VDD = 30 V, VGS = 10 V, ID = 80 A
RG = 3.9 Ω
Fall time
VDD = 30 V, VGS = 10 V, ID = 80 A
RG = 3.9 Ω
Gate charge at threshold
VDD = 40 V, ID ≥ 0.1 A, VGS =0 to 1 V
Gate charge at 7.0 V
VDD = 40 V, ID = 80 A, VGS =0 to 7 V
Gate charge total
VDD = 40 V, ID = 80 A, VGS =0 to 10 V
Gate plateau voltage
VDD = 40 V, ID = 80 A
Semiconductor Group
gfs
Ciss
Coss
Crss
td(on)
30
-
-
-
-
tr
td(off)
-
-
tf
Qg(th)
Qg(7)
Qg(total)
V(plateau)
-
-
-
-
-
3
Values
typ.
max.
Unit
-
2420
-
3025
S
pF
745 930
380 475
ns
20 30
35 55
45 70
30 45
nC
3 4.5
65 100
85 130
V
5.8 -
28/Jan/1998
3Pages BUZ 110 S
SPP80N05
Typ. output characteristics
ID = ƒ(VDS)
parameter: tp = 80 µs
180 Ptot = 200Wl
kj
A
ID 140
i
120
100
80
60
40
hVGS [V]
a 4.0
b 4.5
gc
d
5.0
5.5
e 6.0
f f 6.5
g 7.0
h
e
i
7.5
8.0
j 9.0
d k 10.0
l 20.0
c
20
b
0a
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V
VDS
5.0
Typ. transfer characteristics ID = f (VGS)
parameter: tp = 80 µs
VDS≥2 x ID x RDS(on)max
70
Typ. drain-source on-resistance
RDS (on) = ƒ(ID)
parameter: tp = 80 µs, Tj = 25 °C
0.038
Ω
0.032
RDS (on)
0.028
a bcdef
0.024
0.020
0.016
0.012
0.008
g
h
i
j
0.004
0.000
VGS [V] =
ab
45.05 5.5
c
6.0
0 20 40
def
6.5 7.0 7.5
60 80
ghi j
8.0 9.0 10.0 20.0
100 120 140 A 170
ID
A
I
D
50
40
30
20
10
0
0 1 2 3 4 5 6 7 8 V 10
VGS
Semiconductor Group
6
28/Jan/1998
6 Page | |||
ページ | 合計 : 8 ページ | ||
|
PDF ダウンロード | [ BUZ110S データシート.PDF ] |
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部品番号 | 部品説明 | メーカ |
BUZ110S | SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated) | Siemens Semiconductor Group |
BUZ110SL | SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated) | Siemens Semiconductor Group |