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BUZ11のメーカーはSiemens Semiconductor Groupです、この部品の機能は「SIPMOS Power Transistorm (N channel Enhancement mode Avalanche-rated)」です。 |
部品番号 | BUZ11 |
| |
部品説明 | SIPMOS Power Transistorm (N channel Enhancement mode Avalanche-rated) | ||
メーカ | Siemens Semiconductor Group | ||
ロゴ | |||
このページの下部にプレビューとBUZ11ダウンロード(pdfファイル)リンクがあります。 Total 9 pages
SIPMOS ® Power Transistor
BUZ 11
Not for new design
• N channel
• Enhancement mode
• Avalanche-rated
Pin 1
G
Pin 2
D
Pin 3
S
Type
BUZ 11
VDS
50 V
ID
30 A
RDS(on)
0.04 Ω
Maximum Ratings
Parameter
Continuous drain current
TC = 29 °C
Pulsed drain current
TC = 25 °C
Avalanche current,limited by Tjmax
Avalanche energy,periodic limited by Tjmax
Avalanche energy, single pulse
ID = 30 A, VDD = 25 V, RGS = 25 Ω
L = 15.6 µH, Tj = 25 °C
Gate source voltage
Power dissipation
TC = 25 °C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Package
TO-220 AB
Symbol
ID
IDpuls
IAR
EAR
EAS
VGS
Ptot
Tj
Tstg
RthJC
RthJA
Ordering Code
C67078-S1301-A2
Values
30
120
30
1.9
Unit
A
mJ
14
± 20
75
-55 ... + 150
-55 ... + 150
≤ 1.67
≤ 75
E
55 / 150 / 56
V
W
°C
K/W
Semiconductor Group
1
07/96
1 Page BUZ 11
Not for new design
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Symbol
min.
Values
typ. max.
Dynamic Characteristics
Transconductance
VDS≥ 2 * ID * RDS(on)max, ID = 19 A
Input capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Output capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Reverse transfer capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Turn-on delay time
VDD = 30 V, VGS = 10 V, ID = 3 A
RGS = 50 Ω
Rise time
VDD = 30 V, VGS = 10 V, ID = 3 A
RGS = 50 Ω
Turn-off delay time
VDD = 30 V, VGS = 10 V, ID = 3 A
RGS = 50 Ω
Fall time
VDD = 30 V, VGS = 10 V, ID = 3 A
RGS = 50 Ω
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
10
-
-
-
-
-
-
-
17 -
1000 1350
450 680
165 250
15 25
55 85
120 160
80 110
Unit
S
pF
ns
Semiconductor Group
3
07/96
3Pages BUZ 11
Not for new design
Typ. output characteristics
ID = ƒ(VDS)
parameter: tp = 80 µs
70 Ptot = 75W
A
60
l
kj
i
h
ID 55
50
45
40
35
30
25
20
15
VGS [V]
g a 4.0
b 4.5
c 5.0
f d 5.5
e 6.0
ef
g
6.5
7.0
h 7.5
d i 8.0
j 9.0
k 10.0
c
l 20.0
10 b
5a
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V
VDS
5.0
Typ. transfer characteristics ID = f (VGS)
parameter: tp = 80 µs
VDS≥2 x ID x RDS(on)max
65
A
55
ID 50
45
40
35
30
25
20
15
10
5
0
0 1 2 3 4 5 6 7 8 V 10
VGS
Typ. drain-source on-resistance
RDS (on) = ƒ(ID)
parameter: VGS
0.13
Ω
0.11
RDS (on)0.10
abc de f
0.09
0.08
0.07
0.06
0.05
0.04
0.03
g
h
i
j
k
0.02 VGS [V] =
0.01
abcdef
4.05 5.0 5.5 6.0 6.5 7.0
0.00
0 10 20 30
ghi j k
7.5 8.0 9.0 10.0 20.0
40 50 A 65
ID
Typ. forward transconductance gfs = f (ID)
parameter: tp = 80 µs,
VDS≥2 x ID x RDS(on)max
26
S
22
gfs 20
18
16
14
12
10
8
6
4
2
0
0
10 20 30 40
A 60
ID
Semiconductor Group
6
07/96
6 Page | |||
ページ | 合計 : 9 ページ | ||
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PDF ダウンロード | [ BUZ11 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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