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BUZ103S の電気的特性と機能

BUZ103SのメーカーはSiemens Semiconductor Groupです、この部品の機能は「SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175C operating temperature)」です。


製品の詳細 ( Datasheet PDF )

部品番号 BUZ103S
部品説明 SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175C operating temperature)
メーカ Siemens Semiconductor Group
ロゴ Siemens Semiconductor Group ロゴ 




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BUZ103S Datasheet, BUZ103S PDF,ピン配置, 機能
SIPMOS ® Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
• dv/dt rated
• 175°C operating temperature
• also in SMD available
Type
BUZ 103 S
VDS
55 V
ID
31 A
RDS(on)
0.04
BUZ 103 S
SPP31N05
Pin 1
G
Pin 2
D
Pin 3
S
Package
TO-220 AB
Ordering Code
Q67040-S4009-A2
Maximum Ratings
Parameter
Continuous drain current
TC = 25 °C
TC = 100 °C
Pulsed drain current
TC = 25 °C
Avalanche energy, single pulse
ID = 31 A, VDD = 25 V, RGS = 25
L = 291 µH, Tj = 25 °C
Avalanche current,limited by Tjmax
Avalanche energy,periodic limited by Tjmax
Reverse diode dv/dt
IS = 31 A, VDS = 40 V, diF/dt = 200 A/µs
Tjmax = 175 °C
Gate source voltage
Power dissipation
TC = 25 °C
Symbol
ID
IDpuls
EAS
IAR
EAR
dv/dt
VGS
Ptot
Values
31
22
124
140
31
7.5
6
± 20
75
Unit
A
mJ
A
mJ
kV/µs
V
W
Semiconductor Group
1
30/Jan/1998

1 Page





BUZ103S pdf, ピン配列
BUZ 103 S
SPP31N05
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Symbol
min.
Dynamic Characteristics
Transconductance
VDS2 * ID * RDS(on)max, ID = 22 A
Input capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Output capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Reverse transfer capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Turn-on delay time
VDD = 30 V, VGS = 10 V, ID = 31 A
RG = 13
Rise time
VDD = 30 V, VGS = 10 V, ID = 31 A
RG = 13
Turn-off delay time
VDD = 30 V, VGS = 10 V, ID = 31 A
RG = 13
Fall time
VDD = 30 V, VGS = 10 V, ID = 31 A
RG = 13
Gate charge at threshold
VDD = 40 V, ID = 0.1 A, VGS =0 to 1 V
Gate charge at 7.0 V
VDD = 40 V, ID = 31 A, VGS =0 to 7 V
Gate charge total
VDD = 40 V, ID = 31 A, VGS =0 to 10 V
Gate plateau voltage
VDD = 40 V, ID = 31 A
Semiconductor Group
gfs
Ciss
Coss
Crss
td(on)
10
-
-
-
-
tr
td(off)
-
-
tf
Qg(th)
Qg(7)
Qg(total)
V(plateau)
-
-
-
-
-
3
Values
typ.
max.
Unit
S
--
pF
720 900
230 300
125 160
ns
10 15
25 40
25 40
20 30
nC
0.7 1
20 30
25 40
5.9 -
V
30/Jan/1998


3Pages


BUZ103S 電子部品, 半導体
BUZ 103 S
SPP31N05
Typ. output characteristics
ID = ƒ(VDS)
parameter: tp = 80 µs , Tj = 25 °C
70 Ptot = 75W l
A
kj
60
ID 55
50
45
40
35
30
25
20
15
10
5
0
0.0 1.0 2.0 3.0
VGS [V]
ia
4.0
b 4.5
c 5.0
h
d 5.5
e
gf
6.0
6.5
g 7.0
f h 7.5
i 8.0
ej
k
9.0
10.0
d l 20.0
c
b
a
4.0 V
VDS
5.5
Typ. transfer characteristics ID = f (VGS)
parameter: tp = 80 µs
VDS2 x ID x RDS(on)max
70
Typ. drain-source on-resistance
RDS (on) = ƒ(ID)
parameter: tp = 80 µs, Tj = 25 °C
0.13
0.11
RDS (on)0.10
a bcd e
f
g
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02 VGS [V] =
0.01
abcdef
45.05 5.5 6.0 6.5 7.0 7.5
0.00
0 10 20 30
h
i
j
ghi j
8.0 9.0 10.0 20.0
40 50 A 65
ID
A
I
D
50
40
30
20
10
0
0 1 2 3 4 5 6 7 8 V 10
VGS
Semiconductor Group
6
30/Jan/1998

6 Page



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共有リンク

Link :


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