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PDF BUZ102AL Data sheet ( Hoja de datos )
| Número de pieza | BUZ102AL | |
| Descripción | SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level d v/d t rated) | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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SIPMOS ® Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
• Logic Level
• dv/dt rated
• Low on-resistance
• 175 °C operating temperature
• also in TO-220 SMD available
BUZ 102AL
Pin 1
G
Pin 2
D
Pin 3
S
Type
BUZ 102AL
VDS
50 V
ID
42 A
RDS(on)
0.028 Ω
Package
TO-220 AB
Ordering Code
C67078-S1356-A2
Maximum Ratings
Parameter
Continuous drain current
TC = 97 °C
Pulsed drain current
TC = 25 °C
Avalanche energy, single pulse
ID = 42 A, VDD = 25 V, RGS = 25 Ω
L = 102 µH, Tj = 25 °C
Reverse diode dv/dt
IS = 42 A, VDS = 40 V, diF/dt = 200 A/µs
Tjmax = 175 °C
Gate source voltage
Gate-source peak voltage,aperiodic
Power dissipation
TC = 25 °C
Symbol
ID
IDpuls
EAS
dv/dt
VGS
Vgs
Ptot
Values
42
168
180
6
± 14
± 20
200
Unit
A
mJ
kV/µs
V
W
Semiconductor Group
1
07/96
1 page  
BUZ 102AL
Power dissipation
Ptot = ƒ(TC)
220
W
Ptot 180
160
140
120
100
80
60
40
20
0
0 20 40 60 80 100 120 140 °C 180
TC
Safe operating area
ID = ƒ(VDS)
parameter: D = 0.01, TC = 25°C
10 3
Drain current
ID = ƒ(TC)
parameter: VGS ≥ 5 V
45
A
ID 35
30
25
20
15
10
5
0
0 20 40 60 80 100 120 140 °C 180
TC
Transient thermal impedance
Zth JC = ƒ(tp)
parameter: D = tp / T
10 0
A
I
D
10 2
/ID
= V DS
R DS(on)
10 1
10 0
10 0
10 1
Semiconductor Group
tp = 30.0µs
100 µs
1 ms
10 ms
DC
V 10 2
VDS
K/W
Z
thJC
10 -1
10 -2
single pulse
D = 0.50
0.20
0.10
0.05
0.02
0.01
10 -3
10 -7
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1 s 10 0
tp
5 07/96
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet BUZ102AL.PDF ] | |
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