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BUZ100L の電気的特性と機能

BUZ100LのメーカーはSiemens Semiconductor Groupです、この部品の機能は「SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level)」です。


製品の詳細 ( Datasheet PDF )

部品番号 BUZ100L
部品説明 SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level)
メーカ Siemens Semiconductor Group
ロゴ Siemens Semiconductor Group ロゴ 




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BUZ100L Datasheet, BUZ100L PDF,ピン配置, 機能
SIPMOS ® Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
• Logic Level
• dv/dt rated
• Ultra low on-resistance
• 175 °C operating temperature
• also in TO-220 SMD available
BUZ 100L
Pin 1
G
Pin 2
D
Pin 3
S
Type
BUZ 100L
VDS
50 V
ID
60 A
RDS(on)
0.018
Package
TO-220 AB
Ordering Code
C67078-S1354-A2
Maximum Ratings
Parameter
Continuous drain current
TC = 101 °C
Pulsed drain current
TC = 25 °C
Avalanche energy, single pulse
ID = 60 A, VDD = 25 V, RGS = 25
L = 70 µH, Tj = 25 °C
Reverse diode dv/dt
IS = 60 A, VDS = 40 V, diF/dt = 200 A/µs
Tjmax = 175 °C
Gate source voltage
Gate-source peak voltage,aperiodic
Power dissipation
TC = 25 °C
Symbol
ID
IDpuls
EAS
dv/dt
VGS
Vgs
Ptot
Values
60
240
250
6
± 14
± 20
250
Unit
A
mJ
kV/µs
V
W
Semiconductor Group
1
07/96

1 Page





BUZ100L pdf, ピン配列
BUZ 100L
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Symbol
min.
Values
typ. max.
Dynamic Characteristics
Transconductance
VDS2 * ID * RDS(on)max, ID = 30 A
Input capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Output capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Reverse transfer capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Turn-on delay time
VDD = 30 V, VGS = 5 V, ID = 3 A
RGS = 50
Rise time
VDD = 30 V, VGS = 5 V, ID = 3 A
RGS = 50
Turn-off delay time
VDD = 30 V, VGS = 5 V, ID = 3 A
RGS = 50
Fall time
VDD = 30 V, VGS = 5 V, ID = 3 A
RGS = 50
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
25
-
-
-
-
-
-
-
45 -
2800 3750
830 1250
350 525
45 70
140 210
350 470
100 135
Unit
S
pF
ns
Semiconductor Group
3
07/96


3Pages


BUZ100L 電子部品, 半導体
BUZ 100L
Typ. output characteristics
ID = ƒ(VDS)
parameter: tp = 80 µs
140 Ptot = 250W
A l kj i h
120
g
ID 110
100
90
80
70
60
50
40
30
20
VGS [V]
a 2.0
f b 2.5
c 3.0
d 3.5
e 4.0
ef
g
4.5
5.0
h 5.5
i 6.0
d j 7.0
k 8.0
l 10.0
c
10 b
0a
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V
VDS
5.0
Typ. transfer characteristics ID = f (VGS)
parameter: tp = 80 µs
VDS2 x ID x RDS(on)max
60
A
50
ID
45
40
35
30
25
20
15
10
5
0
0 1 2 3 4 5 6 7 8 V 10
VGS
Drain-source on-resistance
RDS (on) = ƒ(Tj)
parameter: ID = 30 A, VGS = 5 V
0.050
RDS
0.040
(on)
0.035
0.030
0.025
98%
0.020
typ
0.015
0.010
0.005
0.000
-60 -20 20 60 100 °C 180
Tj
Typ. forward transconductance gfs = f (ID)
parameter: tp = 80 µs,
VDS2 x ID x RDS(on)max
60
S
50
gfs
45
40
35
30
25
20
15
10
5
0
0
10 20 30 40
A 60
ID
Semiconductor Group
6
07/96

6 Page



ページ 合計 : 9 ページ
 
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[ BUZ100L データシート.PDF ]


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共有リンク

Link :


部品番号部品説明メーカ
BUZ100

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated)

Siemens Semiconductor Group
Siemens Semiconductor Group
BUZ100L

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level)

Siemens Semiconductor Group
Siemens Semiconductor Group
BUZ100S

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated)

Siemens Semiconductor Group
Siemens Semiconductor Group
BUZ100SL

SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated)

Siemens Semiconductor Group
Siemens Semiconductor Group


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