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Número de pieza | VBO21-12NO7 | |
Descripción | Standard Rectifier Module | |
Fabricantes | IXYS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de VBO21-12NO7 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! Standard Rectifier Module
1~ Rectifier Bridge
Part number
VBO21-12NO7
K NA D
VBO21-12NO7
13~
Rectifier
VRRM =
I DAV =
I FSM =
1200 V
20 A
120 A
Features / Advantages:
● Package with DCB ceramic
● Improved temperature and power cycling
● Planar passivated chips
● Very low forward voltage drop
● Very low leakage current
Applications:
● Diode for main rectification
● For one phase bridge configurations
● Supplies for DC power equipment
● Input rectifiers for PWM inverter
● Battery DC power supplies
● Field supply for DC motors
Package: ECO-PAC1
● Industry standard outline
● RoHS compliant
● Soldering pins for PCB mounting
● Height: 9 mm
● Base plate: DCB ceramic
● Reduced weight
● Advanced power cycling
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130327a
1 page VBO21-12NO7
Rectifier
40
100
50 Hz
0.8 x V RRM
100
VR = 0 V
30
IF
20
[A]
10
TVJ =
125°C
150°C
0
0.4 0.8
TVJ = 25°C
1.2 1.6
VF [V]
80
IFSM
[A] 60
TVJ = 45°C
TVJ = 150°C
I2t
[A2s]
TVJ = 45°C
TVJ = 150°C
40 10
2.0
10-3
10-2
10-1
100
1
t [s]
t [ms]
10
Fig. 1 Forward current vs.
voltage drop per diode
Fig. 2 Surge overload current
vs. time per diode
Fig. 3 I2t vs. time per diode
30
20
Ptot
[W]
10
DC =
1
0.5
0.4
0.33
0.17
0.08
RthJA:
0.6 KW
0.8 KW
1 KW
2 KW
4 KW
8 KW
40
30
IF(AV)M
20
[A]
10
DC =
1
0.5
0.4
0.33
0.17
0.08
0
0 5 10 15 0 25 50 75 100 125 150 175
IdAVM [A]
TA [°C]
Fig. 4 Power dissipation vs. forward current
and ambient temperature per diode
0
0 25 50 75 100 125 150
TC [°C]
Fig. 5 Max. forward current vs.
case temperature per diode
3.0
2.5
2.0
ZthJC
1.5
[K/W]
1.0
0.5
Constants for ZthJC calculation:
i Rth (K/W)
ti (s)
1 1.359
0.1015
2 0.3286 0.1026
3 0.1651 0.4919
4 0.6473 0.62
0.0
1
10
100
1000
10000
t [ms]
Fig. 6 Transient thermal impedance junction to case vs. time per diode
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130327a
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet VBO21-12NO7.PDF ] |
Número de pieza | Descripción | Fabricantes |
VBO21-12NO7 | Standard Rectifier Module | IXYS |
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