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PDF VWO35-12HO7 Data sheet ( Hoja de datos )
| Número de pieza | VWO35-12HO7 | |
| Descripción | Thyristor Module | |
| Fabricantes | IXYS | |
| Logotipo |  |
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Thyristor Module
AC Controlling
3~ full-controlled
Part number
VWO35-12HO7
VWO35-12HO7
VRRM = 1200 V
I TAV
=
16 A
VT = 1.19 V
HA
JC
MF
Backside: isolated
IB
Features / Advantages:
● Thyristor for line frequency
● Planar passivated chip
● Long-term stability
● Direct Copper Bonded Al2O3-ceramic
LE
NG
Applications:
● Line rectifying 50/60 Hz
● Softstart AC motor control
● DC Motor control
● Power converter
● AC power control
● Lighting and temperature control
Package: ECO-PAC1
● Isolation Voltage: 3000 V~
● Industry standard outline
● RoHS compliant
● Soldering pins for PCB mounting
● Height: 9 mm
● Base plate: DCB ceramic
● Reduced weight
● Advanced power cycling
Terms Conditions of usage:
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact your local sales office.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office.
Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
IXYS reserves the right to change limits, conditions and dimensions.
© 2016 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20160909a
1 page  
VWO35-12HO7
Thyristor
50
200
300
40
IF 30
[A] 20 TVJ = 125°C
TVJ = 25°C
IFSM 100
[A]
TVJ = 45°C
TVJ = 125°C
10
0
0.0 0.5 1.0 1.5 2.0
VF [V]
Fig. 1 Forward current vs.
voltage drop per thyristor
50Hz, 80% VRRM
0
0.001
0.01
0.1
t [s]
1
Fig. 2 Surge overload current
vs. time per thyristor
200
I2t
[A2s]
100
TVJ= 45°C
TVJ= 125°C
0
1 2 3 4 5 6 7 89
t [ms]
Fig. 3 I2t vs. time per thyristor
100
1: IGD, TVJ = 125°C
2: IGT, TVJ = 25°C
3: IGT, TVJ = -40°C
10
VG
[V]
1
4
3
2
6
5
1000
100
tgd
[μs]
10
TVJ = 25°C
typ. Limit
1
0.1
100
101
4: PGAV = 5 W
5: PGM = 2.5 W
6: PGM = 0.5 W
102 103
IG [mA]
Fig. 4 Gate trigger characteristics
1
10 100 1000
IG [mA]
Fig. 5 Gate trigger delay time
40
30
IT(AV)M
20
[A]
10
DC =
1
0.5
0.4
0.33
0.17
0.08
0
0 50 100 150
TC [°C]
Fig. 5 Max. forward current vs.
case temperature per thyristor
30
DC =
1
25 0.5
0.4
0.33
20 0.17
0.08
Ptot 15
[W]
10
5
0
0 5 10 15 20 0
IT(AV)M [A]
RthHA:
0.6 K/W
0.8 K/W
1.0 K/W
2.0 K/W
4.0 K/W
8.0 K/W
1.4
1.2
1.0
ZthJC 0.8
[K/W0] .6
0.4
0.2
50 100
Tamb [°C]
150
0.0
1
Constants for ZthJC calc.:
i Rth (K/W)
1 0.020
2 0.150
3 0.260
4 0.510
5 0.360
ti (s)
0.0004
0.0100
0.0280
0.1200
0.4500
10
100
1000
10000
t [ms]
Fig. 4 Power dissipation vs. forward current
and ambient temperature per thyristor
Fig. 6 Transient thermal impedance junction to case
vs. time per thyristor
IXYS reserves the right to change limits, conditions and dimensions.
© 2016 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20160909a
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet VWO35-12HO7.PDF ] | |
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