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PDF MMBTA56 Data sheet ( Hoja de datos )
| Número de pieza | MMBTA56 | |
| Descripción | PNP Plastic Encapsulated Transistor | |
| Fabricantes | SeCoS | |
| Logotipo |  |
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Elektronische Bauelemente
MMBTA56
-0.5A , -80V
PNP Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
General Purpose Amplifier Applications
MARKING
2GM
PACKAGE INFORMATION
Package
MPQ
SOT-23
3K
Leader Size
7’ inch
SOT-23
A
L
3
Top View
CB
12
KE
1
D
F GH
3
2
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.04
2.10 2.80
1.20 1.60
0.89 1.40
1.78 2.04
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
- 0.18
0.40 0.60
0.08 0.20
0.6 REF.
0.85 1.15
Collector
3
1
Base
2
Emitter
MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance From Junction
To Ambient
Junction, Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
TJ, TSTG
Ratings
-80
-80
-4
-500
225
555
150, -55~150
Unit
V
V
V
mA
mW
°C / W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition frequency
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE1
hFE2
VCE(sat)
VBE
fT
-80
-80
-4
-
-
-
100
100
-
-
50
- - V IC= -100µA, IE=0
- - V IC= -1mA, IB=0
- - V IE= -100µA, IC=0
- -0.1 µA VCB= -80V, IE=0
- -0.1 µA VCE= -60V, IB=0
- -0.1 µA VEB= -4V, IC=0
- 400
VCE= -1V, IC= -10mA
--
VCE= -1V, IC= -100mA
-
-0.25
V IC= -100mA, IB = -10mA
- -1.2 V VCE= -1V, IC= -100mA
- - MHz VCE= -1V,IC= -100mA, f=100MHz
http://www.SeCoSGmbH.com/
11-Jul-2011 Rev. A
Any changes of specification will not be informed individually.
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