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BTB08-600SWのメーカーはSTMicroelectronicsです、この部品の機能は「logic level and standard 8A Triacs」です。 |
部品番号 | BTB08-600SW |
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部品説明 | logic level and standard 8A Triacs | ||
メーカ | STMicroelectronics | ||
ロゴ | |||
このページの下部にプレビューとBTB08-600SWダウンロード(pdfファイル)リンクがあります。 Total 18 pages
BTA08, BTB08, T810, T835, T850
Snubberless™, logic level and standard 8 A Triacs
Datasheet - production data
Features
On-state rms current, IT(RMS) 8 A
Repetitive peak off-state voltage, VDRM /
VRRM 600 V to 800 V
Triggering gate current, IGT (Q1) 5 to 50 mA
Description
Available either in through-hole and surface-
mount packages, these devices are suitable for
general purpose AC switching. They can be used
as an ON/OFF function in applications such as
static relays, heating regulation, induction motor
starting circuits or for phase control operation in
light dimmers and motor speed controllers, etc.
The Snubberless versions (BTA, BTB08_xxxxW
and T8 series) are specially recommended for
use on inductive loads, thanks to their high
commutation performance.
Logic level versions are designed to interface
directly with low power drivers such as
Microcontrollers.
By using an internal ceramic pad, the BTA series
provide voltage insulated tab (rated at 2500 VRMS)
in compliance with UL standards (file ref.:
E81734).
April 2017
DocID7472 Rev 12
This is information on a product in full production.
1/18
www.st.com
1 Page BTA08, BTB08, T810, T835, T850
Table 3: Standard (4 quadrants)
Symbol
Parameter
Quadrant
IGT(1)
VGT
VGD
IH(2)
VD = 12 V, RL = 33 Ω
VD = VDRM, RL = 33 Ω, Tj = 125 °C
IT = 500 mA
IL IG = 1.2 IGT
dV/dt(2) VD = 67 % VDRM gate open, Tj = 125 °C
(dI/dt)c(2) (dI/dt)c = 5.3 A/ms, Tj = 125 °C
I - II - III
IV
All
All
I - III - IV
II
Max.
Max.
Min.
Max.
Max.
Min.
Min.
Characteristics
BTA08/BTB08
CB
25 50
50 100
1.3
0.2
25 50
40 50
80 100
200 400
5 10
Unit
mA
V
V
mA
mA
V/µA
Notes:
(1) Minimum IGT is guaranteed at 5 % of IGT max.
(2) For both polarities of A2 referenced to A1
Symbol
VTM(1)
VTO(1)
RD(1)
IDRM IRRM
Table 4: Static electrical characteristics
Test conditions
ITM = 11 A, tp = 380 µs
Tj = 25 °C
Max.
threshold on-state voltage
Tj = 125 °C
Max.
Dynamic resistance
Tj = 125 °C
Max.
VDRM = VRRM
Tj = 25 °C
Tj = 125 °C
Max.
Max.
Notes:
(1)For both polarities of A2 referenced to A1
Value
1.55
0.85
50
5
1
Unit
V
V
mΩ
µA
mA
Symbol
Rth(j-c)
Rth(j-a)
Table 5: Thermal resistance
Parameter
Max. junction to case thermal
resistance (AC)
IPAK / D2PAK / DPAK / TO-220AB
TO-220AB Insulated
Junction to
ambient
S(1) = 1 cm² D²PAK
S = 1 cm² DPAK
Junction to ambient
TO-220AB / TO-220AB Insulated
IPAK
Notes:
(1)S = Copper surface under tab
Value Unit
1.6
°C/W
2.5
45
70
°C/W
60
100
DocID7472 Rev 12
3/18
3Pages Package information
BTA08, BTB08, T810, T835, T850
2 Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
Epoxy meets UL94, V0
Lead-free package
Recommended torque: 0.4 to 0.6 N·m
2.1 DPAK package information
Figure 13: DPAK package outline
6/18 DocID7472 Rev 12
6 Page | |||
ページ | 合計 : 18 ページ | ||
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PDF ダウンロード | [ BTB08-600SW データシート.PDF ] |
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部品番号 | 部品説明 | メーカ |
BTB08-600S | logic level and standard 8A Triacs | STMicroelectronics |
BTB08-600SW | logic level and standard 8A Triacs | STMicroelectronics |