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MMBT2369A データシート PDF ( 特性, スペック, ピン接続図 )

部品番号 MMBT2369A
部品説明 NPN Silicon Epitaxial Planar Transistors
メーカ HORNBY
ロゴ HORNBY ロゴ 

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MMBT2369A Datasheet, MMBT2369A PDF,ピン配置, 機能
MMBT2369A【NPN Transistors/ 200mW / SOT-23】
NPN Silicon Epitaxial Planar Transistors
Features
◆ For Switching and Amplifier Applications
PACKAGE OUTLINE
Absolute Maximum Ratings【TA=25℃】
Parameter
Collector Base Voltage
Collector Emitter Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current Continuous
Power Dissipation
Derate above 25 ℃
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Collector Cutoff Current
VCE = 1 V, IC = 10 mA
VCE=0.35V, IC=10mA
VCE=0.35V, IC=10mA,TA=-55℃
VCE=0.4V, IC=30mA
VCE=1.0V, IC=100mA
IC=10mA, IB=1mA
IC=10mA, IB=1mA,TA=+125℃
IC=30mA, IB=3.0mA
IC=100mA, IB=10mA
IC=10mA, IB=1mA
IC=10mA, IB=1mA,TA=-55℃
IC=30mA, IB=3mA
IC=100mA, IB=10mA
VCE=20V
VCB=20V
VCB=20V, TA = 150 ℃
Collector Emitter Breakdown Voltage
Ic = 10 mA
Collector Base Breakdown Voltage
Collector Emitter Breakdown Voltage
Emitter Base Breakdown Voltage
IC=10μA
IC=10μA
IE=10μA
1
Symbol
VCBO
VCEO
VCES
VEBO
Ic
PD
hFE
VCEsat
VBEsat
ICES
ICBO
V(BR)CEO
V(BR)CBO
V(BR)CES
V(BR)EBO
Min Typ Max
40
----- 15
40
-----
4.5
----- 200
-----
----- 200
1.8
-----
----- 120
40
20 -----
30
20
----- 0.2
0.3
----- 0.25
0.5
0.7 ----- 0.85
1.02
----- 1.15
1.60
0.4
----- 0.4
30
15
40 ----- 100
40 100
4.5 0.3
Unit
V
mA
mW
mW/℃
-----
V
uA
V

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