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PDF MMBT2222 Data sheet ( Hoja de datos )
| Número de pieza | MMBT2222 | |
| Descripción | NPN Transistor | |
| Fabricantes | JinYu | |
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MMBT2222
TRANSISTOR(NPN)
FEATURES
Genernal Purpose Amplifier
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
75
VCEO Collector-Emitter Voltage
30
VEBO Emitter-Base Voltage
6
IC Collector Current
600
PC Collector Power Dissipation
250
RΘJA Thermal Resistance From Junction To Ambient
500
Tj Junction Temperature
Tstg Storage Temperature
150
-55～+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
SOT–23
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min Typ Max Unit
Collector-base breakdown voltage
V(BR)CBO IC=10µA, IE=0
75
V
Collector-emitter breakdown voltage V(BR)CEO IC=10mA, IB=0
30
V
Emitter-base breakdown voltage
V(BR)EBO IE=10µA, IC=0
6
V
Collector cut-off current
ICBO
VCB=60V, IE=0
10 nA
Collector cut-off current
ICEX
VCE=30V, VBE(off)=3V
10 nA
Emitter cut-off current
IEBO
VEB=3V, IC=0
0.1 µA
hFE(1)* VCE=10V, IC=150mA
100 300
DC current gain
hFE(2)* VCE=10V, IC=0.1mA
40
hFE(3)* VCE=10V, IC=500mA
42
Collector-emitter saturation voltage VCE(sat)1* IC=500mA, IB=50mA
1V
Collector-emitter saturation voltage VCE(sat)2* IC=150mA, IB=15mA
0.3 V
Base-emitter saturation voltage
VBE(sat)* IC=500mA, IB=50mA
1.2 V
Transition frequency
fT VCE=20V,IC=20mA, f=100MHz
300
MHz
Delay time
td VCC=30V, VBE(off)=-0.5V IC=150mA,
10 ns
Rise time
tr IB1=15mA
25 ns
Storage time
Fall time
ts
VCC=30V, IC=150mA, IB1= IB2=15mA
tf
225 ns
60 ns
*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.
CLASSIFICATION OF hFE(1)
RANK
RANGE
MARKING
L
100–200
M1B
H
200–300
JinYu
semiconductor
www.htsemi.com
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