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MMBT2222ALT1 の電気的特性と機能

MMBT2222ALT1のメーカーはWILLASです、この部品の機能は「General Purpose Transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 MMBT2222ALT1
部品説明 General Purpose Transistor
メーカ WILLAS
ロゴ WILLAS ロゴ 




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MMBT2222ALT1 Datasheet, MMBT2222ALT1 PDF,ピン配置, 機能
WILLAS
FM120-M+
MMBT2222(A)LTTH1RU
1G.0AeSnUReFArCaElMPOuUNrTpSoCHsOeTTTKrYaBAnRsRIiEsRtRoErCTIFIERS -20V- 200V
FM1200-M+
SOD-123+ PACKAGE
Pb Free Product
Features
NPN SBilaitccoh pnrocess design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to
RoHS porpotdimucizt efobropaarcdksinpgacoed. e suffix "G",
MHaoliosgt••ueHLnreoifgwrSeheepcnoupswrriroetedirvnulitoctcyst asfLop, erahvpibgeaihllcitk1eyi,fnfligocwiceofndoceryw.saurfdfixvo"Hlta" .ge drop.
High surge capability.
Guardring for overvoltage protection.
MAXIMUUMltrRa AhiTgIhN-GspSeed switching.
SRilaictionng epitaxial planar chip,Smymetbaol lsilicon ju22n2c2tion.
Lead-free parts meet environmental standards of
2222A
CollecMtoIrL–E-SmTitDte-r1V9o5lt0a0ge/228
V CEO
30
RoHS product for packing code suffix "G"
CollecHtoarloBgaesnefrVeoeltapgroeduct for packingVcCoBdOe suffix "H"60
40
75
EmitMter–eBcasheaVonltaigceal data V EBO
5.0
6.0
CollecEtoproCxuyrr:eUntL94C-Von0tirnautoeudsflame reItCardant 600
600
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
Unit
Vdc
Vdc
Vdc
mAdc
0.071(1.8)
0.056(1.4)
SOT– 23
3
0.04C0O(1L.0L)ECTOR
0.024(0.6)
THERMACLasCeH: MARolAdeCdTpElaRsItSicT,ISCOSD-123H
CharaTcetermrisintica
ls
:Plate
d
terminals,
solderable
,
peSr yMmIbLo-Sl TD-750 Max
Method 2026
Total Device Dissipation FR– 5 Board, (1)
TA =2P5o°Clarity : Indicated by cathode band
PD
225
DerateMaobuonvtein2g5P°Cosition : Any
1.8
0.031(0.8) Typ.
Unit
1
BASE
0.031(0.8) Typ.
mW
2
Dimensions in inches and (millimeters)EMITTER
mW/°C
ThermWaleRigehstis:tAanpcper,oJxuinmcatiotendto0A.0m1b1iegnrtam
RθJA
556 °C/W
Total Device Dissipation
PD 300 mW
Alumina SubsMtrAatXe,I(M2)UTMA = R25A°CTINGS AND ELECTRICAL CHARACTERISTICS
RatDinegrsataet a2b5ovea2mbCient temperature unless otherwise specified.
2.4
mW/°C
SingTlheeprmhaasl eRheasilsf twanacvee,, J6u0nHczti,ornetsoisAtimveboiefnitnductive load.RθJA
417 °C/W
  ForJcuanpcaticointivaenldoaSdto, rdaegreatTeemcuprererantubrey 20%
TJ , Tstg
–55 to +150
°C
ORDERING INFORMATION
Device
Marking
Shipping
MMBT2222LT1
M1B 3000/Tape & Reel
MMBT2222ALT1 1P 3000/Tape & Reel
DEVICE MARKINGRATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Marking Code
MMBT2222LT1= M1B ; M MBT2222ALT1= 1 P
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
14
40
15
50
16
60
MEaLxEimCuTmRRICMASLVoCltaHgAeRACTERISTICS (TA = 25°C uVnRleMsSs other1w4ise note2d1.)
28
35
42
18 10
115 120
80 100 150 200 Volts
56 70 105 140 Volts
Maximum DC BlocCkihnagrVacotlteargisetic
VDC 20 Sym30bol 4M0 in 50 Max 60 Unit80 100 150 200 Volts
Maximum Average Forward Rectified Current
  OFF CHARACTERISTICS
IO
 
PeakCFoollrewcatordr–SEumrgeittCerurBrerenta8k.d3omwsnsVinogllteahgaelf sineM-wMavBeT22I2F2SM
superimposed on rated load (JEDEC method)
(I C = 10 mAdc, I B = 0)
Typical Thermal Resistance (Note 2)
TypiCcaolllJeucntocrtioBnaCsaepBacreitaakndceow(NnoVteol1ta) ge
MMBT2222A
RΘJA
MMBT222C2J
Ope(rIaCtin=g1T0eµmApdecra, tIuEre= R0)ange
MMBT222T2JA
StorEagmeitTteerm–BpearsaetuBrereRaakndgoewn Voltage
MMBT22T2S2TG
  (I E = 10 µAdc, I C = 0)
MMBT2222A
V (BR)CEO
 
 V (BR)CBO
-55 to +125
V (BR)EBO
30
40
60
75
5.0
6.0
1.0
 
30 Vdc
––
 
40
120 Vdc
- 65 to +V1d7c5
––
 
 
-55 to +150
Amps
 
Amps
℃/W
PF
Collector CutoffCCHuArrReAnCt TERISTICS
Max(imVuCmE F=o6rw0 aVrddcV,oIltaEBg(oeff)a=t 13..00AVdDcC)
MMBT2S2Y2M2BAOL FM120-MH FIM1C3EX0-MH FM140-MH FM150-M1H0FM160-MHnFAMd1c80-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VF
0.50 0.70
0.85
0.9 0.92 Volts
MaxCimoullmecAtovreCraugteofRf CevuerrrseentCurrent at
Rate(dV DCBC=B5lo0cVkidngc,VIoElt=ag0e)
@T
@T
AA==12M255℃MBT222I2R
  (V CB = 60 Vdc, I E = 0)
MMBT2222A
I CBO
––
––
0.5µAdc
0.01 10
0.01
 
mAmp
NOT(EVS:CB = 50 Vdc, I E = 0, T A = 125°C)
MMBT2222
–– 10
1- Me(VasCuBre=d6a0t 1VMdcH,ZI aEn=d0a,pTpliAed= r1e2ve5r°sCe)voltage oMf 4M.0BVTD22C2. 2A
–– 10
2- ThEemrmitatleRr eCsuisttoafnfcCeuFrrroemntJunction to Ambient
 
 
(V EB = 3.0 Vdc, I C = 0)
Base Cutoff Current
MMBT2222A
I EBO
100 nAdc
(V CE = 60 Vdc, V EB(off) = 3.0 Vdc)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
MMBT2222A
I BL
20 nAdc
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
201220-1112-06
WILWLAILSLEALSEECLTERCOTRNOICNICCOCROPR.P.

1 Page





MMBT2222ALT1 pdf, ピン配列
WILLAS
FM120-M+
MMBT2222(A)LTTH1RU
1G.0AeSnUReFAraCEl MPOuUNrTpSoCHsOeTTTKrYaBnARsRiIEsRtRoErCTIFIERS -20V- 200V
FM1200-M+
SOD-123+ PACKAGE
Pb Free Product
Features
Package outline
Batch process design, excellent power dissipation offers
LboewtteprrroefvileerssuerlfeaackeamgoeucnutrerdenatpapnlidcathtiSeorWnmianITlorCredHseisIrNttaoGncTe.IME EQUIVALENT TEST CIRCSUODIT-1S23H
optimize board space.
Low power loss, high efficiency.
High current capa1b.0iltioty1,0l0oµws,forward+v3o0ltVage drop.
Hig+h1s6uVrge capabDilUitTyY. CYCLE ~~ 2%
Guardring for overvoltage pro1te.0cktion.
Ultr0a high-speed switching.
200
Silicon
epitaxial
planar
chip,
metal
silicon
junctionC.
*
S
Lead2-.f0rVee par<ts2.m0 neset environmental standards of
<
10
pF
MIL-STD-19500 /228
+ 16 V
0
–14 V
1.0 to 100µs,
0.146(3.7)
0.130(3.3)
DUTY CYCLE ~~ 2%
1.0 k
< 20 ns 1N914
+30 V
0.012(0.3) Typ.
200
0.071(1.8)
0.056(1.4)
C S*< 10 pF
RoHS product for packing code suffix "G"
Scope rise time < 4.0ns
– 4.0 V
Halogen free product for packing code suffix "H"
Mechanical data
*Total shunt capacitance of test jig, connectors, and oscilloscope.
Epoxy : UL94-V0Firgauterde f1la. mTuerrnetaOrdnaTnitme
0.040(1.0)
Figure 2. Turn–Off Time 0.024(0.6)
Case : Molded plastic, SOD-123H
Terminals
:Plated
terminals,
solderable
per
,
MIL-STD-750
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
Po1l0a0r0ity : Indicated by cathode band
700
Mounting
PVosCiEt=io1n0:
AVny
500
Weight
:
Ap
pVrCoEx=i1m.0a
V
te
d
0.011
gram
300
T J = +125°C
Dimensions in inches and (millimeters)
200 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
+25°C
Ratings at 25100 ambient temperature unless otherwise specified.
Single phase7h0alf wave, 60Hz, resistive of inductive load.
  For capacitive50load, derate current by 20%
–55°C
30 RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Marking Code 20
12 13 14 15 16
18 10
115 120
Maximum Recurrent Peak Reverse Voltage
10
Maximum RMS V0o.1ltage 0.2 0.3
0.5 0.7
Maximum DC Blocking Voltage
1.0
VRRM
V2.R0 MS 3.0
VDC
20 30
145.0 7.0 2110
20 30
40 50 60
2280 30 35 50 7042 100
40 50 60
80 100 150
5620 300 70 500 7001015.0k
80 100 150
200
140
200
Volts
Volts
Volts
Maximum Average Forward Rectified Current
 
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed1o.0n rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
0.8
Operating Temperature Range
IO I C , COLLECTOR CURRENT (mA)
  Figure 3. DC Current Gain
IFSM
RΘJA
CJ
TJ
 
 
-55 to +125
1.0
 
30
40
120
 
   T J = 25°C
-55 to +150
Amps
 
Amps
℃/W
PF
Storage Temperature Range
  0.6
CHARACTERISTICS
Maximum For0w.4ard VoltagIeCa=t11.0.0mA ADC
TSTG
- 65 to +175
10SmYMABOL
FM120-MH
FM130-MH
FM140-MH
FM101500m-MAH
FM160-MH
FM180-MH
500mA
FM1100-MH FM1150-MH
FM1200-MH
UNIT
VF
0.50 0.70
0.85
0.9 0.92 Volts
Maximum Average Reverse Current at @T A=25℃
Rated DC Blo0c.k2ing Voltage
 
@T A=125℃
IR
0.5  
mAmp
10
NOTES:
1- Measured at 10MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resista0n.0c0e5From0.J0u1nction t0o.0A2mb0i.e0n3t 0.05
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
20 30 50
 
 
I B , BASE CURRENT (mA)
Figure 4. Collector Saturation Region
201220-1112-06
WILLWAILSLEALSEECLTERCOTRNOICNICCOCROPR. P.


3Pages


MMBT2222ALT1 電子部品, 半導体
WILLAS
FM120-M+
MMBT2222(A)TLHTR1U
1.0GA SeUnRFeArCaElMPOUuNrTpSCoHsOTeTKTYrBaAnRRsIEisR RtoECrTIFIERS -20V- 200V
FM1200-M+
SOD-123+ PACKAGE
Pb Free Product
Features
Package outline
Batch process design, excellent power dissipation offSerOs T-23
better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to
SOD-123H
optimize board space.
Low power loss, high efficiency.
High current capability, low forward voltage drop.
0.146(3.7)
0.130(3.3)
High surge capability.
.122(3.10)
Guardring for overvoltage protection.
Ultra high-speed switching.
.106(2.70)
Silicon epitaxial planar chip, metal silicon junction.
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
Epoxy : UL94-V0 rated flame retardant
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
Case : Molded plastic, SOD-123H
Terminals
:Plated
terminals,
solderable
per
,
MIL-STD-750
Method 2026 .080(2.04)
Polarity : Indicated by cathode.0b7a0n(d1.78)
Mounting Position : Any
0.031(0.8) Typ.
0.031(0.8) Typ.
.008(0.20)
Dimensions in.0in0ch3es(0an.d08)(millimeters)
Weight : Approximated 0.011 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60H.z0, 0re4si(s0tiv.1e0o)f MindAuXct.ive load.
  For capacitive load, derate current by 20%
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
12 13 14 15 16
.0VRRM
VRMS
20
20
(104.
50
)
30
21
40
28
50
35
60
42
VDC.012(200.30) 30 40 50 60
18 10
115 120
80 100 150 200 Volts
56 70 105 140 Volts
80 100 150 200 Volts
Maximum Average Forward Rectified Current
IO
  
Peak Forward Surge Current 8.3 ms single half Dsine-wave imIFeSMnsions in inches and (millimeters)
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
RΘJA
CJ
TJ
 
 
-55 to +125
 
1.0
 
30
40
120
 
 
-55 to +150
Amps
 
Amps
℃/W
PF
Storage Temperature Range
 
TSTG
- 65 to +175
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
 
NOTES:
@T A=125℃
VF
IR
0.50
0.70
0.5
10
0.85
0.9 0.92 Volts
 
mAmps
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
 
 
201220-1121-06
WILWLIALSLAESLEELCETCRTORNOINCICCOCORRPP. .

6 Page



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