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VS-20ETS08-M3 の電気的特性と機能

VS-20ETS08-M3のメーカーはVishayです、この部品の機能は「Input Rectifier Diode」です。


製品の詳細 ( Datasheet PDF )

部品番号 VS-20ETS08-M3
部品説明 Input Rectifier Diode
メーカ Vishay
ロゴ Vishay ロゴ 




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VS-20ETS08-M3 Datasheet, VS-20ETS08-M3 PDF,ピン配置, 機能
VS-20ETS..PbF, VS-20ETS..-M3, VS-20ATS..PbF, VS-20ATS..-M3
www.vishay.com
Vishay Semiconductors
High Voltage, Input Rectifier Diode, 20 A
2
3
TO-220AC 1
Base
cathode
2
1 23
TO-220AB
Cathode to
base
2
13
Cathode Anode
VS-20ETS..
1
Anode
3
Anode
VS-20ATS..
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
IFSM
TJ max.
Diode variation
TO-220AC, TO-220AB
20 A
800 V to 1200 V
1.1 V
300 A
150 °C
Single die, common anode
FEATURES
• Very low forward voltage drop
• 150 °C max. operating junction temperature
• Glass passivated pellet chip junction
• Designed and qualified according to
JEDEC®-JESD 47
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Input rectification
• Vishay Semiconductors switches and output rectifiers
which are available in identical package outlines
DESCRIPTION
High voltage rectifiers optimized for very low forward
voltage drop with moderate leakage.
These devices are intended for use in main rectification
(single or three phase bridge).
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS
SINGLE-PHASE BRIDGE
Capacitive input filter TA = 55 °C, TJ = 125 °C
common heatsink of 1 °C/W
16.3
THREE-PHASE BRIDGE
21
UNITS
A
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
VRRM
IFSM
Sinusoidal waveform
VF 10 A, TJ = 25 °C
TJ
VALUES
20
800/1200
300
1.0
-40 to +150
VOLTAGE RATINGS
PART NUMBER
VS-20ETS08PbF, VS-20ETS08-M3
VS-20ATS08PbF, VS-20ATS08-M3
VS-20ETS12PbF, VS-20ETS12-M3
VS-20ATS12PbF, VS-20ATS12-M3
VRRM, MAXIMUM
PEAK REVERSE VOLTAGE
V
800
1200
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
900
1300
UNITS
A
V
A
V
°C
IRRM
AT 150 °C
mA
1
Revision: 12-Oct-16
1 Document Number: 94341
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1 Page





VS-20ETS08-M3 pdf, ピン配列
VS-20ETS..PbF, VS-20ETS..-M3, VS-20ATS..PbF, VS-20ATS..-M3
www.vishay.com
Vishay Semiconductors
150
RthJC (DC) = 1.3 °C/W
140
130 Ø
Conduction angle
120
110
100
90
0
30° 60° 90° 120°
18
2 4 6 8 10 12 14 16 18 20 22
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
35
DC
18
30 120°
90°
25 60°
30°
20
15
RMS limit
10
5
0
0
Ø
Conduction period
TJ = 150 °C
5 10 15 20 25
Average Forward Current (A)
Fig. 4 - Forward Power Loss Characteristics
150
RthJC (DC) = 1.3 °C/W
140
130
Ø
Conduction period
120
110
100
90
0
30°
60°
90°
120°
18
DC
5 10 15 20 25 30
Average Forward Current (A)
35
Fig. 2 - Current Rating Characteristics
300
At any rated load condition and with
rated VRRM applied following surge.
250 Initial TJ = 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
200
150
100
50
1 10 100
Number of Equal Amplitude
Half Cycle Current Pulse (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
30
18
120°
25 90°
60°
30°
20
15
RMS limit
10
5
0
0
Ø
Conduction angle
TJ = 150 °C
4 8 12 16 20
Average Forward Current (A)
24
Fig. 3 - Forward Power Loss Characteristics
300 Maximum non-repetitive surge current
versus pulse train duration.
250
Initial TJ = 150 °C
No voltage reapplied
Rated VRRM reapplied
200
150
100
50
0.01
0.1
Pulse Train Duration (s)
1
Fig. 6 - Maximum Non-Repetitive Surge Current
Revision: 12-Oct-16
3 Document Number: 94341
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


3Pages


VS-20ETS08-M3 電子部品, 半導体
TO-220AC
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in millimeters and inches
(6)
E
E2 (7)
Q
(6) D
L3
D1
1 23
L4
A
ØP
0.014 M B A M
Detail B
(6) H1
(7)
A
C
L
B
Seating
plane
A
A1
e1
0.015 M B A M
cA
A2
E
H1
θ
Thermal pad
1 23
DD
CC
L1
D2 (6)
2 x b2
2xb
Detail B
E1 (6)
Lead assignments
Diodes
1 + 2 - Cathode
3 - Anode
Lead tip
View A - A
Conforms to JEDEC outline TO-220AC
SYMBOL
MILLIMETERS
MIN. MAX.
INCHES
MIN. MAX.
NOTES
SYMBOL
MILLIMETERS
MIN. MAX.
INCHES
NOTES
MIN. MAX.
A 4.25 4.65 0.167 0.183
E1
6.86 8.89 0.270 0.350
6
A1 1.14 1.40 0.045 0.055
E2 - 0.76 - 0.030 7
A2 2.56 2.92 0.101 0.115
e 2.41 2.67 0.095 0.105
b 0.69 1.01 0.027 0.040
e1 4.88 5.28 0.192 0.208
b1
0.38 0.97 0.015 0.038
4
H1 6.09 6.48 0.240 0.255 6, 7
b2 1.20 1.73 0.047 0.068
L 13.52 14.02 0.532 0.552
b3
1.14 1.73 0.045 0.068
4
L1
3.32 3.82 0.131 0.150
2
c 0.36 0.61 0.014 0.024
L3 1.78 2.13 0.070 0.084
c1
0.36 0.56 0.014 0.022
4
L4
0.76 1.27 0.030 0.050
2
D
14.85 15.25 0.585 0.600
3
Ø P 3.54 3.73 0.139 0.147
D1 8.38 9.02 0.330 0.355
Q 2.60 3.00 0.102 0.118
D2 11.68 12.88 0.460 0.507 6
90° to 93° 90° to 93°
E
10.11 10.51 0.398 0.414
3, 6
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Lead dimension and finish uncontrolled in L1
(3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured
at the outermost extremes of the plastic body
(4) Dimension b1, b3 and c1 apply to base metal only
(5) Controlling dimension: inches
(6) Thermal pad contour optional within dimensions E, H1, D2 and E1
(7) Dimension E2 x H1 define a zone where stamping and singulation irregularities are allowed
(8) Outline conforms to JEDEC TO-220, D2 (minimum) where dimensions are derived from the actual package outline
Document Number: 95221 For technical questions within your region, please contact one of the following:
Revision: 07-Mar-11
www.vishay.com
1

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部品番号部品説明メーカ
VS-20ETS08-M3

Input Rectifier Diode

Vishay
Vishay


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