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VS-20ETF02FPPbF の電気的特性と機能

VS-20ETF02FPPbFのメーカーはVishayです、この部品の機能は「Fast Soft Recovery Rectifier Diode」です。


製品の詳細 ( Datasheet PDF )

部品番号 VS-20ETF02FPPbF
部品説明 Fast Soft Recovery Rectifier Diode
メーカ Vishay
ロゴ Vishay ロゴ 




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VS-20ETF02FPPbF Datasheet, VS-20ETF02FPPbF PDF,ピン配置, 機能
VS-20ETF0..FPPbF Series, VS-20ETF0..FP-M3 Series
www.vishay.com
Vishay Semiconductors
Fast Soft Recovery Rectifier Diode, 20 A
2
3
1
TO-220 FULL-PAK
2
13
Cathode Anode
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
IFSM
trr
TJ max.
Diode variation
Snap factor
TO-220FP
20 A
200 V, 400 V, 600 V
1.3 V
300 A
60 ns
150 °C
Single die
0.6
FEATURES
• Glass passivated pellet chip junction
• 150 °C max. operation junction temperature
• Designed and qualified according to
JEDEC®-JESD 47
• Fully isolated package (VINS = 2500 VRMS)
• UL E78996 approved
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Available
APPLICATIONS
These devices are intended for use in output rectification
and freewheeling in inverters, choppers and converters as
well as in input rectification where severe restrictions on
conducted EMI should be met.
DESCRIPTION
The VS-20ETF0..FP... fast soft recovery rectifier series has
been optimized for combined short reverse recovery time
and low forward voltage drop.
The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF
trr
TJ
Sinusoidal waveform
10 A, TJ = 25 °C
1 A, 100 A/μs
VALUES
20
200 to 600
300
1.2
60
-40 to +150
UNITS
A
V
A
V
ns
°C
VOLTAGE RATINGS
PART NUMBER
VS-20ETF02FPPbF, VS-20ETF02FP-M3
VS-20ETF04FPPbF, VS-20ETF04FP-M3
VS-20ETF06FPPbF, VS-20ETF06FP-M3
VRRM, MAXIMUM PEAK
REVERSE VOLTAGE
V
200
400
600
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
300
500
700
IRRM
AT 150 °C
mA
5
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
Maximum peak one cycle non-repetitive
surge current
IF(AV)
IFSM
Maximum I2t for fusing
I2t
Maximum I2t for fusing
I2t
TEST CONDITIONS
TC = 51 °C, 180° conduction half sine wave
10 ms sine pulse, rated VRRM applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated VRRM applied
10 ms sine pulse, no voltage reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
VALUES
20
250
300
316
442
4420
UNITS
A
A2s
A2s
Revision: 11-Feb-16
1 Document Number: 94095
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1 Page





VS-20ETF02FPPbF pdf, ピン配列
VS-20ETF0..FPPbF Series, VS-20ETF0..FP-M3 Series
www.vishay.com
Vishay Semiconductors
160 Average Forward Current (A)
20ETF.. Series
120
80
40
0
0
30° 60° 90°
120°
180°
4 8 12 16 20
Average On-state Current (A)
Fig. 1 - Current Rating Characteristics
45
DC
40 180°
35 120°
90°
30 60°
30°
25
20 RMS limit
15
Ø
Conduction period
10
5
0
0
20ETF.. Series
TJ = 150 °C
5 10 15 20 25 30 35
Average Forward Current (A)
Fig. 4 - Forward Power Loss Characteristics
150
20ETF.. Series
100
50
0
0
30°
60°
90°
120° 180°
DC
5 10 15 20 25 30
Average Forward Current (A)
35
Fig. 2 - Current Rating Characteristics
300
At any rated load condition and with
rated VRRM applied following surge.
250 Initial TJ = 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
200
150
100
20ETF.. Series
50
1
10
100
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
35
180°
30 120°
90°
60°
25 30°
20 RMS limit
15
Ø
10 Conduction angle
5 20ETF.. Series
TJ = 150 °C
0
0 5 10 15 20 25
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
550
Maximum non-repetitive surge current
500 versus pulse train duration.
450 Initial TJ = 150 °C
400 No voltage reapplied
Rated VRRM reapplied
350
300
250
200
150
100 20ETF.. Series
50
0.001
0.01
0.1
1
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Revision: 11-Feb-16
3 Document Number: 94095
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


3Pages


VS-20ETF02FPPbF 電子部品, 半導体
VS-20ETF0..FPPbF Series, VS-20ETF0..FP-M3 Series
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code VS- 20 E T F 06 FP PbF
1 2 3 4567 8
1 - Vishay Semiconductors product
2 - Current rating (20 = 20 A)
3 - Circuit configuration:
E = single diode
4 - Package:
T = TO-220
5 - Type of silicon:
F = fast soft recovery rectifier
6 - Voltage code x 100 = VRRM
7 - FULL-PAK
02 = 200 V
04 = 400 V
06 = 600 V
8 - Environmental digit:
PbF = lead (Pb)-free and RoHS-compliant
-M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER T/R
VS-20ETF02FPPbF
50
VS-20ETF02FP-M3
50
VS-20ETF04FPPbF
50
VS-20ETF04FP-M3
50
VS-20ETF06FPPbF
50
VS-20ETF06FP-M3
50
MINIMUM ORDER QUANTITY
1000
1000
1000
1000
1000
1000
PACKAGING DESCRIPTION
Antistatic plastic tubes
Antistatic plastic tubes
Antistatic plastic tubes
Antistatic plastic tubes
Antistatic plastic tubes
Antistatic plastic tubes
Dimensions
Part marking information
SPICE model
LINKS TO RELATED DOCUMENTS
www.vishay.com/doc?95005
TO-220 FP PbF
www.vishay.com/doc?95009
TO-220 FP -M3
www.vishay.com/doc?95440
www.vishay.com/doc?95410
Revision: 11-Feb-16
6 Document Number: 94095
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

6 Page



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部品番号部品説明メーカ
VS-20ETF02FPPbF

Fast Soft Recovery Rectifier Diode

Vishay
Vishay


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