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VS-20ETF08S-M3 の電気的特性と機能

VS-20ETF08S-M3のメーカーはVishayです、この部品の機能は「Surface Mount Fast Soft Recovery Rectifier Diode」です。


製品の詳細 ( Datasheet PDF )

部品番号 VS-20ETF08S-M3
部品説明 Surface Mount Fast Soft Recovery Rectifier Diode
メーカ Vishay
ロゴ Vishay ロゴ 




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VS-20ETF08S-M3 Datasheet, VS-20ETF08S-M3 PDF,ピン配置, 機能
VS-20ETF08S-M3, VS-20ETF10S-M3, VS-20ETF12S-M3 Series
www.vishay.com
Vishay Semiconductors
Surface Mount Fast Soft Recovery Rectifier Diode, 20 A
2
3
1
TO-263AB (D2PAK)
Base
cathode
+
2
1
Anode -
3
- Anode
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
IFSM
trr
TJ max.
Diode variation
Snap factor
TO-263AB (D2PAK)
20 A
800 V, 1000 V, 1200 V
1.31 V
355 A
95 ns
150 °C
Single die
0.6
FEATURES
• Glass passivated pellet chip junction
• Designed and qualified according to
JEDEC®-JESD 47
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Available
APPLICATIONS
• Output rectification and freewheeling in inverters,
choppers and converters
• Input rectifications where severe restrictions on
conducted EMI should be met
DESCRIPTION
The VS-20ETF..S-M3 soft recovery rectifier series has been
optimized for combined short reverse recovery time and low
forward voltage drop.
The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
Sinusoidal waveform
VRRM
IFSM
VF 20 A, TJ = 25 °C
trr 1 A, 100 A/μs
TJ Range
VALUES
20
800 to 1200
355
1.31
95
-40 to +150
UNITS
A
V
A
V
ns
°C
VOLTAGE RATINGS
PART NUMBER
20ETF08S-M3
20ETF10S-M3
20ETF12S-M3
VRRM, MAXIMUM PEAK
REVERSE VOLTAGE
V
800
1000
1200
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
900
1100
1300
IRRM
AT 150 °C
mA
6
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
IF(AV)
Maximum peak one cycle
non-repetitive surge current
IFSM
Maximum I2t for fusing
Maximum I2t for fusing
I2t
I2t
TEST CONDITIONS
TC = 97 °C, 180° conduction half sine wave
10 ms sine pulse, rated VRRM applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated VRRM applied
10 ms sine pulse, no voltage reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
VALUES
20
300
355
450
635
6350
UNITS
A
A2s
A2s
Revision: 11-Feb-16
1 Document Number: 94887
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1 Page





VS-20ETF08S-M3 pdf, ピン配列
VS-20ETF08S-M3, VS-20ETF10S-M3, VS-20ETF12S-M3 Series
www.vishay.com
Vishay Semiconductors
150
20ETF.. Series
RthJC (DC) = 0.9 K/W
140
130
120
110
100
0
Ø
Conduction angle
30°
60°
90°
120°
180°
5 10 15 20
Average Forward Current (A)
25
Fig. 1 - Current Rating Characteristics
150
20ETF.. Series
RthJC (DC) = 0.9 K/W
140
Ø
130 Conduction period
120
110
100
0
60°
90°
30°
120°
180°
DC
5 10 15 20 25 30
Average Forward Current (A)
35
Fig. 2 - Current Rating Characteristics
35
30
25
20
15
10
5
0
0
180°
120°
90°
60°
30°
RMS limit
Ø
Conduction angle
20ETF.. Series
TJ = 150 °C
5 10 15 20
Average Forward Current (A)
25
Fig. 3 - Forward Power Loss Characteristics
45
180°
40 120°
35
90°
60°
30 30°
DC
25
20 RMS limit
15
10
5
0
0
Ø
Conduction period
20ETF.. Series
TJ = 150 °C
5 10 15 20 25 30
Average Forward Current (A)
35
Fig. 4 - Forward Power Loss Characteristics
350
At any rated load condition and with
300 rated VRRM applied following surge.
Initial TJ = 150 °C
at 60 Hz 0.0083 s
250 at 50 Hz 0.0100 s
200
150
100
20ETF.. Series
50
1
10
100
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
400
Maximum non-repetitive surge current
350 versus pulse train duration.
Initial TJ = 150 °C
300 No voltage reapplied
Rated VRRM reapplied
250
200
150
100
20ETF.. Series
50
0.01
0.1
Pulse Train Duration (s)
1
Fig. 6 - Maximum Non-Repetitive Surge Current
Revision: 11-Feb-16
3 Document Number: 94887
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


3Pages


VS-20ETF08S-M3 電子部品, 半導体
VS-20ETF08S-M3, VS-20ETF10S-M3, VS-20ETF12S-M3 Series
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code VS- 20 E T F 12 S TRL -M3
1 2 3 456789
1 - Vishay Semiconductors product
2 - Current rating (20 = 20 A)
3 - Circuit configuration:
E = single diode
4 - Package:
T = D2PAK
5 - Type of silicon:
F = fast soft recovery rectifier
6 - Voltage code x 100 = VRRM
7 - S = surface mountable
08 = 800 V
10 = 1000 V
12 = 1200 V
8 - None = tape
TRR = tape and reel (right oriented)
TRL = tape and reel (left oriented)
9 - -M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER T/R
VS-20ETF08S-M3
50
VS-20ETF08STRR-M3
800
VS-20ETF08STRL-M3
800
VS-20ETF10S-M3
50
VS-20ETF10STRR-M3
800
VS-20ETF10STRL-M3
800
VS-20ETF12S-M3
50
VS-20ETF12STRR-M3
800
VS-20ETF12STRL-M3
800
MINIMUM ORDER QUANTITY
1000
800
800
1000
800
800
1000
800
800
PACKAGING DESCRIPTION
Antistatic plastic tubes
13" diameter reel
13" diameter reel
Antistatic plastic tubes
13" diameter reel
13" diameter reel
Antistatic plastic tubes
13" diameter reel
13" diameter reel
Dimensions
Part marking information
Packaging information
LINKS TO RELATED DOCUMENTS
www.vishay.com/doc?95046
www.vishay.com/doc?95444
www.vishay.com/doc?95032
Revision: 11-Feb-16
6 Document Number: 94887
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

6 Page



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部品番号部品説明メーカ
VS-20ETF08S-M3

Surface Mount Fast Soft Recovery Rectifier Diode

Vishay
Vishay


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