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VS-20ETF12-M3 の電気的特性と機能

VS-20ETF12-M3のメーカーはVishayです、この部品の機能は「Fast Soft Recovery Rectifier Diode」です。


製品の詳細 ( Datasheet PDF )

部品番号 VS-20ETF12-M3
部品説明 Fast Soft Recovery Rectifier Diode
メーカ Vishay
ロゴ Vishay ロゴ 




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VS-20ETF12-M3 Datasheet, VS-20ETF12-M3 PDF,ピン配置, 機能
www.vishay.com
VS-20ETF..PbF Series, VS-20ETF..-M3 Series
Vishay Semiconductors
Fast Soft Recovery Rectifier Diode, 20 A
2
TO-220AC
3
1
Base
cathode
2
13
Cathode Anode
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
IFSM
trr
TJ max.
Diode variation
Snap factor
TO-220AC
20 A
800 V, 1000 V, 1200 V
1.31 V
320 A
95 ns
150 °C
Single die
0.6
FEATURES
• Glass passivated pellet chip junction
• 150 °C max operating junction temperature
• Low forward voltage drop and short reverse
recovery time
• Designed and qualified according to
JEDEC®-JESD 47
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
These devices are intended for use in output rectification
and freewheeling in inverters, choppers and converters as
well as in input rectification where severe restrictions on
conducted EMI should be met.
DESCRIPTION
The VS-20ETF... fast soft recovery rectifier series has been
optimized for combined short reverse recovery time and low
forward voltage drop.
The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VRRM
IF(AV)
IFSM
trr
VF
TJ
Sinusoidal waveform
1 A, 100 A/μs
20 A, TJ = 25 °C
Range
VALUES
800 to 1200
20
320
95
1.31
-40 to +150
UNITS
V
A
ns
V
°C
VOLTAGE RATINGS
PART NUMBER
VS-20ETF08PbF, VS-20ETF08-M3
VS-20ETF10PbF, VS-20ETF10-M3
VS-20ETF12PbF, VS-20ETF12-M3
VRRM, MAXIMUM PEAK
REVERSE VOLTAGE
V
800
1000
1200
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
900
1100
1300
IRRM
AT 150 °C
mA
6
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
IF(AV)
Maximum peak one cycle
non-repetitive surge current
IFSM
Maximum I2t for fusing
Maximum I2t for fusing
I2t
I2t
TEST CONDITIONS
TC = 113 °C, 180° conduction half sine wave
10 ms sine pulse, rated VRRM applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated VRRM applied
10 ms sine pulse, no voltage reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
VALUES
20
270
320
365
515
5150
UNITS
A
A2s
A2s
Revision: 11-Feb-16
1 Document Number: 94098
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1 Page





VS-20ETF12-M3 pdf, ピン配列
www.vishay.com
VS-20ETF..PbF Series, VS-20ETF..-M3 Series
Vishay Semiconductors
150
20ETF.. Series
RthJC (DC) = 0.9 K/W
140
130 Ø
Conduction angle
120
110
100
0
30°
60°
90°
120°
180°
5 10 15 20
25
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
35
180°
30 120°
90°
25
60°
30°
20
RMS limit
15
10
Ø
Conduction period
5 20ETF.. Series
TJ = 150 °C
0
0 5 10 15 20 25
Average Forward Current (A)
Fig. 4 - Forward Power Loss Characteristics
150
20ETF.. Series
RthJC (DC) = 0.9 K/W
140
Ø
130 Conduction period
120
110
100
0
60°
30° 90°
120°
180°
DC
5 10 15 20 25 30
Average Forward Current (A)
35
Fig. 2 - Current Rating Characteristics
300
280
260
240
220
200
180
160
140
120
100
80
60
1
At any rated load condition and with
rated Vrrm applied following surge.
Initial Tj = 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
VS-20ETF.. Series
10
100
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
35
180°
30 120°
90°
25
60°
30°
20 RMS limit
15
10
Ø
Conduction angle
5 20ETF.. Series
TJ = 150 °C
0
0 5 10 15 20 25
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
350
Maximum non-repetitive surge current
300 versus pulse train duration.
Initial Tj = Tj max.
250
No voltage reapplied
Rated Vrrm reapplied
200
150
100
50
VS-20ETF.. Series
0
0.01
0.1
1
10
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Revision: 11-Feb-16
3 Document Number: 94098
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


3Pages


VS-20ETF12-M3 電子部品, 半導体
www.vishay.com
VS-20ETF..PbF Series, VS-20ETF..-M3 Series
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code VS- 20 E T F 12 PbF
1 2 3 4567
1 - Vishay Semiconductors product
2 - Current rating (20 = 20 A)
3 - Circuit configuration:
E = single diode
4 - Package:
T = TO-220AC
5 - Type of silicon:
F = fast soft recovery rectifier 08 = 800 V
6 - Voltage ratings
10 = 1000 V
7 - Environmental digit
12 = 1200 V
PbF = lead (Pb)-free and RoHS-compliant
-M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER T/R
VS-20ETF08PbF
50
VS-20ETF08-M3
50
VS-20ETF10PbF
50
VS-20ETF10-M3
50
VS-20ETF12PbF
50
VS-20ETF12-M3
50
MINIMUM ORDER QUANTITY
1000
1000
1000
1000
1000
1000
PACKAGING DESCRIPTION
Antistatic plastic tube
Antistatic plastic tube
Antistatic plastic tube
Antistatic plastic tube
Antistatic plastic tube
Antistatic plastic tube
Dimensions
Part marking information
LINKS TO RELATED DOCUMENTS
www.vishay.com/doc?95221
TO-220AC PbF
www.vishay.com/doc?95224
TO-220AC -M3
www.vishay.com/doc?95068
Revision: 11-Feb-16
6 Document Number: 94098
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

6 Page



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部品番号部品説明メーカ
VS-20ETF12-M3

Fast Soft Recovery Rectifier Diode

Vishay
Vishay


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