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PDF VS-16TTS16S-M3 Data sheet ( Hoja de datos )
| Número de pieza | VS-16TTS16S-M3 | |
| Descripción | Thyristor Surface Mount Phase Control SCR | |
| Fabricantes | Vishay | |
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www.vishay.com
VS-16TTS16S-M3 Series
Vishay Semiconductors
Thyristor Surface Mount Phase Control SCR, 16 A
4 2, 4
Anode
2
3
1
TO-263AB (D2PAK)
13
Cathode Gate
PRODUCT SUMMARY
Package
Diode variation
IT(AV)
VDRM/VRRM
VTM
IGT
TJ
TO-263AB (D2PAK)
Single SCR
10 A
1600 V
1.4 V
60 mA
-40 °C to 125 °C
FEATURES
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• Designed and qualified according
JEDEC®-JESD47
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Input rectification (soft start)
• Vishay input diodes, switches and output rectifiers which
are in identical package outlines
DESCRIPTION
The VS-16TTS16S-M3 high voltage series of silicon
controlled rectifiers are specifically designed for medium
power switching and phase control applications. The glass
passivation technology used has reliable operation up to
125 °C junction temperature.
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS
SINGLE-PHASE BRIDGE
NEMA FR-4 or G-10 glass fabric-based epoxy
with 4 oz. (140 μm) copper
2.5
Aluminum IMS, RthCA = 15 °C/W
6.3
Aluminum IMS with heatsink, RthCA = 5 °C/W
14.0
Note
• TA = 55 °C, TJ = 125 °C, footprint 300 mm2
THREE-PHASE BRIDGE
3.5
9.5
18.5
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IT(AV)
IRMS
VRRM/VDRM
ITSM
VT
dV/dt
Sinusoidal waveform
10 A, TJ = 25 °C
dI/dt
TJ
VALUES
10
16
1600
200
1.4
500
150
-40 to +125
VOLTAGE RATINGS
PART NUMBER
VS-16TTS16S-M3
VRRM, MAXIMUM PEAK
REVERSE VOLTAGE
V
1600
VDRM, MAXIMUM PEAK
DIRECT VOLTAGE
V
1600
UNITS
A
UNITS
A
V
A
V
V/μs
A/μs
°C
IRRM/IDRM
AT 125 °C
mA
10
Revision: 08-Jul-15
1 Document Number: 94894
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
VS-16TTS16S-M3 Series
Vishay Semiconductors
100
Rectangular gate pulse
a)Recommended load line for
rated di/dt: 10 V, 20 ohms
tr = 0.5µs, tp >= 6 µs
b)Recommended load line for
10 <= 30% rated di/dt: 10 V, 65 ohms
tr = 1 µs, tp >= 6 µs
(b)
(a)
(1) PGM = 40 , tp = 1 ms
(2) PGM = 20 W, tp = 2 ms
(3) PGM = 8 W, tp = 5 ms
(4) PGM = 4 W, tp = 10 ms
1
VGD
(4) (3) (2) (1)
0.1
0.001
IGD
16TTS.. Series
Frequency Limited by PG(AV)
0.01 0.1
1
Instantaneous Gate Current (A)
Fig. 9 - Gate Characteristics
10
100
ORDERING INFORMATION TABLE
Device code VS- 16 T T S 16 S TRL -M3
1 2 3 456789
1 - Vishay Semiconductors product
2 - Current rating
3 - Circuit configuration:
T = single thyristor
4 - Package:
T = D2PAK
5 - Type of silicon:
S = standard recovery rectifier
6 - Voltage rating: Voltage code x 100 = VRRM (16 = 1600 V)
7 - S = surface mountable
8 - None = tube
TRL = tape and reel (left oriented)
TRR = tape and reel (right oriented)
9 - -M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER T/R
VS-16TTS16S-M3
50
VS-16TTS16STRR-M3
800
VS-16TTS16STRL-M3
800
MINIMUM ORDER QUANTITY
1000
800
800
PACKAGING DESCRIPTION
Antistatic plastic tubes
13" diameter reel
13" diameter reel
Dimensions
Part marking information
Packaging information
LINKS TO RELATED DOCUMENTS
www.vishay.com/doc?95046
www.vishay.com/doc?95444
www.vishay.com/doc?95032
Revision: 08-Jul-15
5 Document Number: 94894
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet VS-16TTS16S-M3.PDF ] | |
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