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PDF VS-15ETH06FP-N3 Data sheet ( Hoja de datos )
| Número de pieza | VS-15ETH06FP-N3 | |
| Descripción | Hyperfast Rectifier | |
| Fabricantes | Vishay | |
| Logotipo |  |
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VS-15ETH06PbF, VS-15ETH06-N3, VS-15ETH06FPPbF, VS-15ETH06FP-N3
www.vishay.com
Vishay Semiconductors
Hyperfast Rectifier, 15 A Fred Pt®
2
3
1
TO-220AC
Base
cathode
2
2
3
1
TO-220 FULL-PAK
2
13
Cathode Anode
VS-15ETH06PbF
VS-15ETH06-N3
13
Cathode Anode
VS-15ETH06FPPbF
VS-15ETH06FP-N3
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
trr typ.
TJ max.
Diode variation
TO-220AC, TO-220FP
15 A
600 V
1.3 V
22 ns
175 °C
Single die
FEATURES
• Hyperfast recovery time
• Low forward voltage drop
• 175 °C operating junction temperature
• Low leakage current
• Single die center tap module
• Fully isolated package (VINS = 2500 VRMS)
• UL E78996 approved
Available
• Designed and qualified according to JEDEC®-JESD 47
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
State of the art hyperfast recovery rectifiers designed with
optimized performance of forward voltage drop, hyperfast
recovery time, and soft recovery.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in PFC boost stage in the
AC/DC section of SMPS, inverters or as freewheeling
diodes.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
SYMBOL
VRRM
Average rectified forward current
IF(AV)
Non-repetitive peak surge current
Peak repetitive forward current
Operating junction and storage temperatures
IFSM
IFM
TJ, TStg
TEST CONDITIONS
TC = 140 °C
TC = 80 °C (FULL-PAK)
TJ = 25 °C
TJ = 25 °C (FULL-PAK)
VALUES
600
15
120
180
30
-65 to +175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Breakdown voltage, blocking voltage VBR, VR IR = 100 μA
Forward voltage
IF = 15 A
VF
IF = 15 A, TJ = 150 °C
Reverse leakage current
VR = VR rated
IR
TJ = 150 °C, VR = VR rated
Junction capacitance
CT VR = 600 V
Series inductance
LS Measured lead to lead 5 mm from package body
MIN.
600
-
-
-
-
-
-
TYP.
-
1.8
1.3
0.2
30
20
8.0
MAX.
-
2.2
1.6
50
500
-
-
UNITS
V
μA
pF
nH
Revision: 13-May-16
1 Document Number: 94002
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
VS-15ETH06PbF, VS-15ETH06-N3, VS-15ETH06FPPbF, VS-15ETH06FP-N3
www.vishay.com
Vishay Semiconductors
VR = 200 V
L = 70 μH
0.01 Ω
D.U.T.
dIF/dt
adjust
G
D
IRFP250
S
Fig. 11 - Reverse Recovery Parameter Test Circuit
IF
0
(3)
trr
ta
tb
(2) IRRM
(4)
Qrr
0.5 IRRM
dI(rec)M/dt (5)
0.75 IRRM
(1) dIF/dt
(1) dIF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve defined by trr
and IRRM
Qrr =
trr x IRRM
2
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 12 - Reverse Recovery Waveform and Definitions
Revision: 13-May-16
5 Document Number: 94002
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet VS-15ETH06FP-N3.PDF ] | |
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