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VS-10RIA80 の電気的特性と機能

VS-10RIA80のメーカーはVishayです、この部品の機能は「Medium Power Phase Control Thyristors」です。


製品の詳細 ( Datasheet PDF )

部品番号 VS-10RIA80
部品説明 Medium Power Phase Control Thyristors
メーカ Vishay
ロゴ Vishay ロゴ 




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VS-10RIA80 Datasheet, VS-10RIA80 PDF,ピン配置, 機能
www.vishay.com
VS-10RIA Series
Vishay Semiconductors
Medium Power Phase Control Thyristors
(Stud Version), 10 A
TO-208AA (TO-48)
PRODUCT SUMMARY
Package
TO-208AA (TO-48)
Diode variation
Single SCR
IT(AV)
VDRM/VRRM
10 A
100 V, 200 V, 400 V, 600 V, 800 V,
1000V, 1200 V
VTM 1.75 V
IGT 60 mA
TJ -65 °C to +125 °C
FEATURES
• Improved glass passivation for high reliability
and exceptional stability at high temperature
• High dIF/dt and dV/dt capabilities
• Standard package
• Low thermal resistance
• Metric threads version available
• Types up to 1200 V VDRM/VRRM
• Designed and qualified for industrial and consumer level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• Medium power switching
• Phase control applications
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IT(AV)
IT(RMS)
ITSM
I2t
VDRM/VRRM
tq
TJ
TC
50 Hz
60 Hz
50 Hz
60 Hz
Typical
VALUES
10
85
25
225
240
255
233
100 to 1200
110
-65 to +125
UNITS
A
°C
A
A
A2s
V
μs
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
VOLTAGE
CODE
VDRM/VRRM, MAXIMUM REPETITIVE PEAK VRSM, MAXIMUM NON-REPETITIVE
AND OFF-STATE VOLTAGE (1)
PEAK VOLTAGE (2)
VV
IDRM/IRRM MAXIMUM
AT TJ = TJ MAXIMUM
mA
10 100
150 20
20 200
300
40 400
500
VS-10RIA
60
80
600
800
700
10
900
100 1000
1100
120 1200
1300
Notes
(1) Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20 A/μs
(2) For voltage pulses with tp 5 ms
Revision: 19-Nov-15
1 Document Number: 93689
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1 Page





VS-10RIA80 pdf, ピン配列
www.vishay.com
VS-10RIA Series
Vishay Semiconductors
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak negative gate voltage
SYMBOL
PGM
PG(AV)
IGM
-VGM
DC gate current required to trigger
IGT
DC gate voltage required to trigger
DC gate current not to trigger
DC gate voltage not to trigger
VGT
IGD
VGD
TEST CONDITIONS
TJ = TJ maximum
TJ = TJ maximum
TJ = TJ maximum
TJ = -65 °C
TJ = 25 °C
TJ = 125 °C
TJ = -65 °C
TJ = 25 °C
Maximum required gate trigger
current/voltage are the lowest value
which will trigger all units 6 V anode
to cathode applied
TJ = 125 °C
TJ = TJ maximum, VDRM = Rated value
TJ = TJ maximum,
VDRM = Rated value
Maximum gate current/voltage not
to trigger is the maximum value
which will not trigger any unit with
rated VDRM anode to cathode
applied
VALUES
8.0
2.0
1.5
10
90
60
35
3.0
2.0
1.0
2.0
0.2
UNITS
W
A
V
mA
V
mA
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum operating junction and
storage temperature range
TJ, TStg
-65 to +125
°C
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
case to heat sink
RthJC
RthCS
DC operation
Mounting surface, smooth, flat and greased
1.85
0.35
K/W
TO NUT TO DEVICE
Mounting torque
Lubricated threads
(Non-lubricated threads)
20 (27.5)
0.23 (0.32)
2.3 (3.1)
25
0.29
2.8
lbf in
kgf · m
N·m
Approximate weight
14 g
0.49 oz.
Case style
See dimensions - link at the end of datasheet
TO-208AA (TO-48)
RthJC CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
180°
0.44
RECTANGULAR CONDUCTION
0.32
TEST CONDITIONS
UNITS
120°
0.53
0.56
90° 0.68
60° 1.01
0.75
1.05
TJ = TJ maximum
K/W
30° 1.71
1.73
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Revision: 19-Nov-15
3 Document Number: 93689
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


3Pages


VS-10RIA80 電子部品, 半導体
www.vishay.com
VS-10RIA Series
Vishay Semiconductors
100
Rectangular gate pulse
a) Recommended load line for
rated di/dt : 10V, 20ohms
tr <=0.5 µs, tp >= 6 µs
b) Recommended load line for
<=30% rated di/dt : 10V, 65ohms
10 tr<=1 µs, tp >= 6 µs
(b)
(a)
(1) PGM = 16W, tp = 4ms
(2) PGM = 30W, tp = 2ms
(3) PGM = 60W, tp = 1ms
(4) PGM = 60W, tp = 1ms
1
VGD
IGD
0.1
0.001
0.01
(4)
(1) (2) (3)
10RIA Series Frequency Limited by PG(AV)
0.1 1
Instantaneous Gate Current (A)
10
100
Fig. 9 - Gate Characteristics
ORDERING INFORMATION TABLE
Device code VS- 10 RIA 120 M S90
1 2 3 456
1 - Vishay Semiconductors product
2 - Current code
3 - Essential part number
4 - Voltage code x 10 = VRRM (see Voltage Ratings table)
5 - None = Stud base TO-208AA (TO-48) 1/4" 28UNF-2A
M = Stud base TO-208AA (TO-48) M6 x 1
6 - Critical dV/dt:
None = 300 V/µs (standard value)
S90 = 1000 V/µs (special selection)
Dimensions
LINKS TO RELATED DOCUMENTS
www.vishay.com/doc?95333
Revision: 19-Nov-15
6 Document Number: 93689
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

6 Page



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部品番号部品説明メーカ
VS-10RIA80

Medium Power Phase Control Thyristors

Vishay
Vishay


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