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Número de pieza | MCR225-9 | |
Descripción | SILICON CONTROLLED RECTIFIERS | |
Fabricantes | Digitron Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MCR225-9 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! MCR225-5, MCR225-7,
MCR225-9, MCR225-12
High-reliability discrete products
and engineering services since 1977
SILICON CONTROLLED RECTIFIERS
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS.
Rating
Symbol
Value
Unit
Peak repetitive forward and reverse off state voltage (1)
MCR225-5
MCR225-7
MCR225-9
MCR225-12
VDRM, VRRM
300
500
700
1000
V
On-state current RMS (all conduction angles; TC = 85°C)
IT(RMS)
25 A
Average on-state current (all conduction angles; TC = 85°C)
IT(AV)
16 A
Peak non-repetitive surge current (1/2 cycle, sine wave 60 Hz, t = 8.3ms)
ITSM 300 A
Forward peak gate power
PGM 20 W
Forward average gate power
PG(AV)
0.5 W
Forward peak gate current
IGM 2.0 A
Operating junction temperature range
TJ
-40 to +125
°C
Storage temperature range
Tstg
-40 to +150
°C
Note 1: VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied
concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
THERMAL CHARACTERISTICS
Thermal resistance, junction-to-case
Characteristic
Symbol
RθJC
Max Unit
1.5 °C/W
ELECTRICAL CHARACTERISTICS
Characteristic
OFF CHARACTERISTICS
Peak repetitive forward or reverse blocking current
(VAK = rated VDRM or VRRM, gate open)
ON CHARACTERISTICS
Forward on-state voltage (2) (ITM = 50A)
Gate trigger current (continuous dc)
(VAK = 12Vdc, RL = 100Ω)
Gate trigger voltage (continuous dc) (VAK = 12 Vdc, RL = 100Ω, TC = -40°C)
Gate non-trigger voltage (VAK = rated VDRM, RL = 100Ω, TJ = 125°C)
Holding current
(VAK = 12Vdc, TC = -40°C)
Turn-on time (ITM = 25A, IGT = 50mAdc)
Turn-off time (VDRM = rated voltage)
(ITM = 25A, IR = 25A)
(ITM = 25A, IR = 25A, TJ = 125°C)
TJ = 25°C
TJ = 125°C
TC = 25°C
TC = -40°C
Symbol Min Typ Max Unit
IDRM, IRRM
-
-
- 10
µA
- 2.0 mA
VTM
- - 1.8
V
IGT
- - 40
- 25 75
mA
VGT
- 1.0 1.5
V
VGD 0.2 - -
V
IH
- 35 40
mA
tgt
- 1.5 2.0
µs
tq
- 15 -
µs
- 35 -
Rev. 20130128
1 page High-reliability discrete products
and engineering services since 1977
MCR225-5, MCR225-7,
MCR225-9, MCR225-12
SILICON CONTROLLED RECTIFIERS
Typical Gate Trigger Current vs. Junction Temperature
Typical Gate Trigger Voltage vs. Junction Temperature
Typical Holding Current vs. Junction Temperature
Rev. 20130128
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet MCR225-9.PDF ] |
Número de pieza | Descripción | Fabricantes |
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MCR225-2FP | Silicon Controlled Rectifiers | Motorola Semiconductors |
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