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PDF MCR225-2FP Data sheet ( Hoja de datos )
| Número de pieza | MCR225-2FP | |
| Descripción | Silicon Controlled Rectifiers | |
| Fabricantes | Motorola Semiconductors | |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
. . . designed primarily for half-wave ac control applications, such as motor controls,
heating controls and power supply crowbar circuits.
• Glass Passivated Junctions with Center Gate Fire for Greater Parameter Uniformity
and Stability
• Small, Rugged, Thermowatt Constructed for Low Thermal Resistance, High Heat
Dissipation and Durability
• Blocking Voltage to 800 Volts
• 300 A Surge Current Capability
• Insulated Package Simplifies Mounting
Order this document
by MCR225FP/D
MCR225FP
Series
ISOLATED SCRs
25 AMPERES RMS
50 thru 800 VOLTS
G
AK
CASE 221C-02
STYLE 2
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
Rating
Symbol
Value
Unit
Peak Repetitive Forward and Reverse Blocking Voltage(1)
(TJ = –40 to +125°C, Gate Open)
MCR225-2FP
MCR225-4FP
MCR225-6FP
MCR225-8FP
MCR225-10FP
VDRM
VRRM
50
200
400
600
800
Volts
On-State RMS Current (TC = +70°C) Full Cycle Sine Wave 50 to 60 Hz(2)
IT(RMS)
25
Amps
Peak Non-repetitive Surge Current (One Full Cycle, 60 Hz, TC = +70°C)
Preceded and followed by rated current
ITSM 300 Amps
Circuit Fusing (t = 8.3 ms)
I2t 375 A2s
Peak Gate Power (TC = +70°C, Pulse Width = 10 µs)
Average Gate Power (TC = +70°C, t = 8.3 ms)
Peak Gate Current (TC = +70°C, Pulse Width = 10 µs)
pRMS Isolation Voltage (TA = 25°C, Relative Humidity 20%)
Operating Junction Temperature Range
Storage Temperature Range
PGM
PG(AV)
IGM
V(ISO)
TJ
Tstg
20
0.5
2
1500
–40 to +125
–40 to +125
Watts
Watt
Amps
Volts
°C
°C
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
2. The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the plastic
body.
Motorola Thyristor Device Data
© Motorola, Inc. 1995
1
1 page  
PACKAGE DIMENSIONS
MCR225FP Series
–B–
P
–T–
SEATING
PLANE
FC
S
N
H
–Y–
Q
Z
G
1 23
A
E
K
LJ
D 3 PL
0.25 (0.010) M B M Y
R
STYLE 2:
PIN 1.
2.
3.
CATHODE
ANODE
GATE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. LEAD DIMENSIONS UNCONTROLLED WITHIN
DIMENSION Z.
INCHES
DIM MIN MAX
A 0.680 0.700
B 0.388 0.408
C 0.175 0.195
D 0.025 0.040
E 0.340 0.355
F 0.140 0.150
G 0.100 BSC
H 0.110 0.155
J 0.018 0.028
K 0.500 0.550
L 0.045 0.070
N 0.049 –––
P 0.270 0.290
Q 0.480 0.500
R 0.090 0.120
S 0.105 0.115
Z 0.070 0.090
MILLIMETERS
MIN MAX
17.28 17.78
9.86 10.36
4.45 4.95
0.64 1.01
8.64 9.01
3.56 3.81
2.54 BSC
2.80 3.93
0.46 0.71
12.70 13.97
1.15 1.77
1.25 –––
6.86 7.36
12.20 12.70
2.29 3.04
2.67 2.92
1.78 2.28
CASE 221C-02
Motorola Thyristor Device Data
5
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| PDF Descargar | [ Datasheet MCR225-2FP.PDF ] | |
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