DataSheet.jp

VS-2N5207 の電気的特性と機能

VS-2N5207のメーカーはVishayです、この部品の機能は「Phase Control Thyristor RMS SCR」です。


製品の詳細 ( Datasheet PDF )

部品番号 VS-2N5207
部品説明 Phase Control Thyristor RMS SCR
メーカ Vishay
ロゴ Vishay ロゴ 




このページの下部にプレビューとVS-2N5207ダウンロード(pdfファイル)リンクがあります。

Total 8 pages

No Preview Available !

VS-2N5207 Datasheet, VS-2N5207 PDF,ピン配置, 機能
www.vishay.com
VS-2N681, VS-2N5205 Series
Vishay Semiconductors
Phase Control Thyristor RMS SCRs, 25 A, 35 A
TO-208AA (TO-48)
PRODUCT SUMMARY
IT(AV)
IT(RMS)
VDRM/VRRM
VTM
IGT
TJ
Package
Diode variation
16 A, 22 A
25 A, 35 A
25 V to 1200 V
2.3 V
60 mA
-40 °C to 125 °C
TO-208AA (TO-48)
Single SCR
FEATURES
• General purpose stud mounted
• Broad forward and reverse voltage range -
through 1200 V
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
2N681-92
IT(AV)
IT(RMS)
ITSM
TC
50 Hz
60 Hz
16 (1)
-65 to +65 (1)
25
145
150 (1)
50 Hz
I2t
60 Hz
103
94
IGT
dV/dt
40
-
dI/dt
75 to 100
VDRM
Range
VRRM
Range
TJ
Note
(1) JEDEC® registered value
25 to 800
25 to 800
-65 to +125 (1)
2N5205-07
22 (1)
-40 to +40
35
285
300 (1)
410
375
40
100 (1)
100
600 to 1200
600 to 1200
-40 to +125 (1)
UNITS
A
°C
A
A
A2s
mA
V/μs
A/μs
V
V
°C
Revision: 19-Nov-15
1 Document Number: 93706
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1 Page





VS-2N5207 pdf, ピン配列
www.vishay.com
VS-2N681, VS-2N5205 Series
Vishay Semiconductors
SWITCHING
PARAMETER
Maximum non-repetitive
rate of rise of turned-on
current
Typical delay time
SYMBOL
VDM = 25 V to 600 V
VDM = 700 V to 800 V
dI/dt
td
TEST CONDITIONS
TC = 125 °C, VDM = Rated VDRM,
ITM = 2 x dI/dt, gate pulse = 20 V,
15 , tp = 6 μs, tr = 0.1 μs maximum
Per JEDEC standard RS-397, 5.2.2.6
TC = 125 °C, VDM = 600 V, ITM = 200 A at
400 Hz maximum, gate pulse = 20 V, 15 ,
tp = 6 μs, tr = 0.1 μs maximum
Per JEDEC standard RS-397, 5.2.2.6
TC = 25 °C, VDM = Rated VDRM, ITM = 10 A
DC resistive circuit, gate pulse = 10 V,
40 source, tp = 6 μs, tr = 0.1 μs
2N681-92
100
75
-
1
2N5205-07
-
-
100
1
UNITS
A/μs
μs
BLOCKING
PARAMETER
SYMBOL
Minimum critical rate of
rise of off-state voltage
dV/dt
Maximum reverse
leakage current
Note
(1) JEDEC registered value
VRRM, VDRM = 400 V
VRRM, VDRM = 500 V
VRRM, VDRM = 600 V
VRRM, VDRM = 700 V
VRRM, VDRM = 800 V
VRRM, VDRM = 1000 V
VRRM, VDRM = 1200 V
IDRM,
IRRM
TEST CONDITIONS
TJ = 125 °C, exponential
to 100 % rated VDRM
TJ = 125 °C, exponential
to 67 % rated VDRM
Gate open
circuited
TJ = 125 °C
2N681-92 2N5205-07 UNITS
100
(typical)
250
(typical)
100 (1)
250
V/μs
3.5 -
3.5 -
2.5 3.3
2.2 - mA
2 2.5
-2
- 1.7
TRIGGERING
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum peak gate power
PGM
tp < 5 ms for 2N681 series;
tp < 500 μs for 2N5204 series
Maximum average gate power
PG(AV)
Maximum peak positive gate current +IGM
Maximum peak positive gate voltage +VGM
Maximum peak negative gate voltage -VGM
Maximum required DC gate
current to trigger
TC = min.
rated value
Maximum required gate trigger current
is the lowest value which will trigger all
units with + 6 V anode to cathode
IGT TC = 25 °C
TC = 125 °C
Typical DC gate current to trigger
TC = 25 °C, + 6 V anode to cathode
Maximum required DC gate
voltage to trigger
Typical DC gate voltage to trigger
Maximum required gate trigger voltage
TC = - 65 °C is the lowest value which will trigger all
VGT units with + 6 V anode to cathode
TC = 25 °C
TC = 25 °C, + 6 V anode to cathode
Maximum DC gate voltage
not to trigger
Maximum gate voltage not to trigger is
VGD
TC = 125 °C
the maximum value which will not
trigger any unit with rated VDRM anode
to cathode
2N681-92
5 (1)
0.5 (1)
2 (1)
10 (1)
5 (1)
80 (1)
40
18.5
30
3 (1)
2
1.5
0.25 (1)
2N5205-07
60 (1)
0.5 (1)
2
-
5 (1)
80 (1)
40
20
30
3 (1)
2
1.5
0.25 (1)
UNITS
W
A
V
mA
V
V
Note
(1) JEDEC registered value
Revision: 19-Nov-15
3 Document Number: 93706
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


3Pages


VS-2N5207 電子部品, 半導体
www.vishay.com
At Any Maximum Rated Load Condition
150 And With Rated VRRM Applied Following Surge
100
50
60 Hz
50 Hz
0
0 2 4 6 8 10 20 40 60
Number Of Equal Amplitude
Half Cycle Current Pulses (N)
Fig. 7 - Maximum Non-Repetitive Surge Current vs.
Number of Current Pulses,
2N681 Series
140
120
100
80
+30°
60 +60°
+90°
40
+120°
+180°
Ø
Conduction Period
Sinusoidal Current Waveform
TJ = 125 °C
DC
20
0
0 4 8 12 16 20 24 28 32 36 40
Average On-State Current Over Full Cycle (A)
Fig. 8 - Maximum Allowable Case Temperature vs. Average
On-State Current (Sinusoidal Current Waveform),
2N5205 Series
140
120
Ø
Conduction Period
100 Rectangular Current
Waveform TJ = 125 °C
80
60
40
20
0
04
+60°
+180°
+90°
+120°
DC
8 12 16 20 24 28 32 36 40
Average On-State Current Over Full Cycle (A)
Fig. 9 - Maximum Allowable Case Temperature vs.
Average On-State Current (Rectangular Current Waveform),
2N5205 Series
VS-2N681, VS-2N5205 Series
Vishay Semiconductors
90
80 DC
70 +30°
+60°
60 +90°
+120°
50 +180°
40
30
20
10
0
0
Ø
Conduction Angle
Sinusoidal Current Waveform
TJ = 125 °C
Controlled Rectifier Turned Fully On
5 10 15 20 25 30 35 40 45 50
Average On-State Current Over Full Cycle (A)
Fig. 10 - Maximum Low-Level On-State Power Loss vs.
Average On-State Current (Sinusoidal Current Waveform),
2N5205 Series
102 104
+30°
5 +60°
+90°
2
+30°
+60°
+90°
5
+120°
+180°
2
10 +120°
DC
103
+180°
5
DC
TJ = 125 °C
5
2
1.0
1.0
Controlled Rectifier
Turned Fully On
2 5 10
2
Ø
Conduction Angle 2
Sinusoidal Current
Waveform
102
5 102 2
5 103
Average On-State Current Over Full Cycle (A)
Fig. 11 - Maximum High-Level On-State Power Loss vs.
Average On-State Current (Sinusoidal Current Waveform),
2N5205 Series
90
80
70
+60°
60 +90°
+120°
50 +180°
40
DC
30
20
10
0
0
Ø
Conduction Period
Rectangular Current Waveform
TJ = 125 °C
Controlled Rectifier Turned Fully On
5 10 15 20 25 30 35 40 45 50
Average On-State Current Over Full Cycle (A)
Fig. 12 - Maximum Low-Level On-State Power Loss vs.
Average On-State Current (Rectangular Current Waveform),
2N5205 Series
Revision: 19-Nov-15
6 Document Number: 93706
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

6 Page



ページ 合計 : 8 ページ
 
PDF
ダウンロード
[ VS-2N5207 データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
VS-2N5205

Phase Control Thyristor RMS SCR

Vishay
Vishay
VS-2N5206

Phase Control Thyristor RMS SCR

Vishay
Vishay
VS-2N5207

Phase Control Thyristor RMS SCR

Vishay
Vishay


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap