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STD13N60M2 の電気的特性と機能

STD13N60M2のメーカーはSTMicroelectronicsです、この部品の機能は「N-CHANNEL POWER MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 STD13N60M2
部品説明 N-CHANNEL POWER MOSFET
メーカ STMicroelectronics
ロゴ STMicroelectronics ロゴ 




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STD13N60M2 Datasheet, STD13N60M2 PDF,ピン配置, 機能
STB13N60M2,
STD13N60M2
N-channel 600 V, 0.35 Ω typ., 11 A
MDmesh™ M2 Power MOSFETs in D2PAK and DPAK packages
Datasheet - production data
Features
Order code
STB13N60M2
STD13N60M2
VDS@TJMAX.
650 V
RDS(on) max.
0.38 Ω
ID
11 A
Figure 1: Internal schematic diagram
D(2, TAB)
Extremely low gate charge
Excellent output capacitance (COSS) profile
100% avalanche tested
Zener-protected
Applications
Switching applications
G(1)
S(3)
Order code
STB13N60M2
STD13N60M2
Description
These devices are N-channel Power MOSFETs
developed using MDmesh™ M2 technology.
Thanks to their strip layout and improved vertical
structure, these devices exhibit low on-resistance
and optimized switching characteristics,
rendering them suitable for the most demanding
high efficiency converters.
AM01476v1_tab
Table 1: Device summary
Marking
Package
13N60M2
D2PAK
DPAK
Packing
Tape and reel
September 2016
DocID024569 Rev 4
This is information on a product in full production.
1/23
www.st.com

1 Page





STD13N60M2 pdf, ピン配列
STB13N60M2, STD13N60M2
Electrical ratings
1 Electrical ratings
Symbol
Table 2: Absolute maximum ratings
Parameter
Value
Unit
VGS
ID
ID
IDM(1)
PTOT
dv/dt(2)
dv/dt(3)
Tstg
Tj
Gate-source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
Total dissipation at TC = 25 °C
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
Storage temperature range
Operating junction temperature range
± 25
11
7
44
110
15
50
- 55 to 150
V
A
A
A
W
V/ns
°C
Notes:
(1)Pulse width limited by safe operating area.
(2)ISD ≤ 11 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD = 400 V.
(3)VDS ≤ 480 V.
Table 3: Thermal data
Symbol
Parameter
Rthj-case
Rthj-pcb(1)
Thermal resistance junction-case max.
Thermal resistance junction-pcb max.
Notes:
(1)When mounted on FR-4 board of 1 inch², 2 oz Cu.
Value
D2PAK
DPAK
1.14
30 50
Unit
°C/W
Symbol
IAR
EAS
Table 4: Avalanche characteristics
Parameter
Avalanche current, repetetive or not repetetive (pulse width
limited by Tjmax.)
Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR;
VDD = 50 V)
Value
2.8
125
Unit
A
mJ
DocID024569 Rev 4
3/23


3Pages


STD13N60M2 電子部品, 半導体
Electrical characteristics
2.2 Electrical characteristics (curves)
STB13N60M2, STD13N60M2
Figure 2: Safe operating area for D2PAK
Figure 3: Thermal impedance for D2PAK
CG20930
K
δ = 0.5
δ = 0.2
δ = 0.1
10-1
δ = 0.05
δ = 0.02
δ = 0.01
SINGLE PULSE
ZδZδtth=h===ttppkk// ƬRƬRtthhjj--CC
tp ƬƬ
10-2
10-5
10-4
10-3
10-2 10-1 tp(s)
Figure 4: Safe operating area for DPAK
Figure 5: Thermal impedance for DPAK
6/23 DocID024569 Rev 4

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
STD13N60M2

N-CHANNEL POWER MOSFET

STMicroelectronics
STMicroelectronics


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