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Datasheet BCW60D Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | BCW60D | GENERAL PURPOSE TRANSISTOR BCW60A,B,C,D
MAXIMUM RATINGS
CASE 318-02/03, STYLE 6
SOT-23 (TO-236AA/AB)
GENERAL PURPOSE TRANSISTOR
NPN SILICON
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage
—Collector Current Continuous
THERMAL CHARACTERISTICS
Symbol vCEO VCBO vEBO
'C
Characteristic
'Total De | Motorola Semiconductors | transistor |
2 | BCW60D | Small Signal Transistors BCW60 Series
New Product
Vishay Semiconductors
formerly General Semiconductor
Small Signal Transistors (NPN)
TO-236AB (SOT-23)
.122 (3.1) .110 (2.8) .016 (0.4)
3
Top View
.056 (1.43) .052 (1.33)
12 .037(0.95) .037(0.95)
Pin Configuration 1. Base 2. Emitter 3. Collector
Mounting Pad Layout
| Vishay | transistor |
3 | BCW60D | Surface Mount General Purpose Si-Epi-Planar Transistors BCW60A ... BCW60D
BCW60A ... BCW60D
NPN
Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage
Version 2006-07-31
Power dissipation – Verlustleistung
2.9 ±0.1 0.4 3
Type Code
1
2
1.1
2.5 max 1.3±0.1
Plastic case Kunststo | Diotec | transistor |
4 | BCW60D | NPN EPITAXIAL SILICON TRANSISTOR | Samsung semiconductor | transistor |
5 | BCW60D | NPN general purpose transistors DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
BCW60 series NPN general purpose transistors
Product specification Supersedes data of 1997 Mar 10 1999 Apr 22
Philips Semiconductors
Product specification
NPN general purpose transistors
FEATURES • Low current (max. 100 mA) • Low v | NXP Semiconductors | transistor |
BCW Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | BCW29 | EPITAXIAL PLANAR PNP TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.
FEATURES ᴌComplementary to BCW31/32
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
VCBO
-30
Collector-Emitter Voltage
VCEO
-20
Emitter-Base Voltage
VEBO
-5
Collector Current KEC transistor | | |
2 | BCW29 | PNP General Purpose Transistors SMD Type
TransistIoCrs
PNP General Purpose Transistors BCW29,BCW30
Features
Low current (max. 100 mA). Low voltage (max. 32 V).
+0.12.4 -0.1
SOT-23
2.9+0.1 -0.1
0.4+0.1 -0.1
3
12 0.95+0.1
-0.1
1.9+0.1 -0.1
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Collector-base voltage
VCBO
Colle Kexin transistor | | |
3 | BCW29 | Silicon Planar Epitaxial Transistor Philips transistor | | |
4 | BCW29 | GENERAL PURPOSE TRANSISTOR BCW29,30
CASE 318-02/03, STYLE 6
SOT-23 (TO-236AA/AB)
GENERAL PURPOSE TRANSISTOR
PNP SILICON
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage
—Collector Current Continuous
Symbol vCEO VCBO vESO
ic
THERMAL CHARACTERISTICS
Characteristic
*Total Device Motorola Semiconductors transistor | | |
5 | BCW29 | SILICON PLANAR EPITAXIAL TRANSISTORS Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
BCW29 BCW30
SILICON PLANAR EPITAXIAL TRANSISTORS
P–N–P transistors
Marking BCW29 = C1 BCW30 = C2
PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm
Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR
3
1
2 CDIL transistor | | |
6 | BCW29 | PNP general purpose transistors DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
BCW29; BCW30 PNP general purpose transistors
Product specification Supersedes data of 1997 Sep 03 1999 Apr 13
Philips Semiconductors
Product specification
PNP general purpose transistors
FEATURES • Low current (max. 100 mA) • Low v NXP Semiconductors transistor | | |
7 | BCW29 | Surface mount Si-Epitaxial PlanarTransistors BCW29, BCW30
BCW29, BCW30
PNP
Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage
Version 2006-07-28
2.9 ±0.1 0.4 3
Type Code
1
2
1.1
1.9
Dimensions - Maße [mm] 1=B 2=E 3=C
2.5 max 1.3±0.1
Power dissipation – Verlus Diotec Semiconductor transistor | |
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Número de pieza | Descripción | Fabricantes | |
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