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VS-1N3890 の電気的特性と機能

VS-1N3890のメーカーはVishayです、この部品の機能は「Fast Recovery Diode, Rectifier」です。


製品の詳細 ( Datasheet PDF )

部品番号 VS-1N3890
部品説明 Fast Recovery Diode, Rectifier
メーカ Vishay
ロゴ Vishay ロゴ 




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VS-1N3890 Datasheet, VS-1N3890 PDF,ピン配置, 機能
www.vishay.com
VS-1N3879(R), VS-1N3889(R) Series
Vishay Semiconductors
Fast Recovery Diodes (Stud Version), 6 A, 12 A
DO-203AA (DO-4)
PRODUCT SUMMARY
IF(AV)
Package
Circuit configuration
6 A, 12 A
DO-203AA (DO-4)
Single diode
FEATURES
• Short reverse recovery time
• Low stored charge
• Wide current range
• Excellent surge capabilities
• Standard JEDEC® types
• Stud cathode and stud anode versions
• Fully characterized reverse recovery conditions
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• DC power supplies
• Inverters
• Converters
• Choppers
• Ultrasonic systems
• Freewheeling diodes
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
TEST CONDITIONS
1N3879(R) TO 1N3883(R)
1N3889(R) TO 1N3893(R)
IF(AV)
TC maximum
6 (1)
100
12 (1)
100
IF(RMS)
IFSM
50 Hz
60 Hz
9.5
72
75 (1)
19
145
150 (1)
50 Hz
I2t
60 Hz
26 103
23 94
I2t 363 856
VRRM
Range
50 to 400 (1)
50 to 400 (1)
trr See Recovery Characteristics table See Recovery Characteristics table
TJ Range
-65 to +150
-65 to +150
Note
(1) JEDEC® registered values
UNITS
A
°C
A
A
A2s
I2s
V
ns
°C
Revision: 28-May-15
1 Document Number: 93144
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1 Page





VS-1N3890 pdf, ピン配列
www.vishay.com
VS-1N3879(R), VS-1N3889(R) Series
Vishay Semiconductors
RECOVERY CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum reverse
recovery time
Maximum peak
recovery current
trr
IRM(REC)
TJ = 25 °C, IF = 1 A to VR = 30 V,
dIF/dt = 100 A/μs
TJ = 25 °C, dIF/dt = 25 A/μs,
IFM = x rated IF(AV)
IFM = x rated IF(AV)
TJ = 25 °C, IF = 1 A to VR = 30 V,
dIF/dt = 100 A/μs
1N3879(R)
TO 1N3883(R)
150
300 (1)
4 (1)
400
1N3889(R)
TO 1N3893(R)
150
300 (1)
5 (1)
350
UNITS
ns
-
Maximum reverse
recovery charge
Qrr TJ = 25 °C, dIF/dt = 25 A/μs,
IFM = x rated IF(AV)
400
nC
400
IFM
trr
t
dir
dt Qrr
IRM(REC)
Note
(1) JEDEC® registered values
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction operating
temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
case to heatsink
TJ
TStg
RthJC
RthCS
DC operation
Mounting surface, smooth,
flat and greased
Allowable mounting torque
Not lubricated threads
Lubricated threads
Approximate weight
Case style
JEDEC®
1N3879(R)
TO 1N3883(R)
1N3889(R)
TO 1N3893(R)
-65 to +150
-65 to +175
2.5 2.0
0.5
1.5 + 0 - 10 %
(13)
1.2 + 0 - 10 %
(10)
7
0.25
DO-203AA (DO-4)
UNITS
°C
°C/W
N·m
(lbf · in)
g
oz.
RthJC CONDUCTION
CONDUCTION ANGLE
1N3879(R)
TO 1N3883(R)
1N3889(R)
TO 1N3893(R)
SINUSOIDAL CONDUCTION
1N3879(R)
TO 1N3883(R)
1N3889(R)
TO 1N3893(R)
RECTANGULAR CONDUCTION
TEST CONDITIONS
UNITS
180°
0.58 0.46 0.33 0.26
120°
60°
0.60
1.28
0.48
1.02
0.58
1.28
0.46
1.02
TJ = 150 °C
K/W
30° 2.20 1.76 2.20 1.76
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Revision: 28-May-15
3 Document Number: 93144
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


3Pages


VS-1N3890 電子部品, 半導体
www.vishay.com
VS-1N3879(R), VS-1N3889(R) Series
Vishay Semiconductors
103
1N3879 to 1N3883
102
10
TJ = 150 °C
TJ = 25 °C
1
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Instantaneous Forward Voltage (V)
Fig. 8 - Maximum Forward Voltage vs. Forward Current,
1N3879 Series
103
1N3879 to 1N3883
Ø = 180°
120°
60°
102 30°
Ø
10
Ø
Ø = DC
180°
120°
60°
30°
1
1 10
TJ = 150 °C
102 103
Average Forward Current (A)
Fig. 9 - Maximum High Level Forward Power Loss vs.
Average Forward Current, 1N3879 Series
103
1N3889 to 1N3893
Ø = 180°
120°
60°
102 30°
Ø
10
Ø
Ø = DC
180°
120°
60°
30°
1
1 10
TJ = 150 °C
102 103
Average Forward Current (A)
Fig. 11 - Maximum High Level Forward Power Loss vs. Average
Forward Current, 1N3889 Series
140
At any rated load condition and with
120 rated VRRM applied following surge.
100
80
60
40 60 Hz
50 Hz
20
0
1 2 4 6 8 10 20 40 60
Number of Equal Amplitude Half
Cycle Current Pulses (N)
Fig. 12 - Maximum Non-Repetitive Surge Current vs.
Number of Current Pulses, 1N3879 Series
103
1N3889 to 1N3893
102
10
TJ = 150 °C
TJ = 25 °C
1
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Instantaneous Forward Voltage (V)
Fig. 10 - Maximum Forward Voltage vs. Forward Current,
1N3889 Series
At any rated load condition and with
150 rated VRRM applied following surge.
100
60 Hz
50 Hz
50
0
1 2 4 6 8 10 20 40 60
Number of Equal Amplitude Half
Cycle Current Pulses (N)
Fig. 13 - Maximum Non-Repetitive Surge Current vs.
Number of Current Pulses, 1N3889 Series
Revision: 28-May-15
6 Document Number: 93144
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

6 Page



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共有リンク

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