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VS-1N3766 の電気的特性と機能

VS-1N3766のメーカーはVishayです、この部品の機能は「Power Silicon Rectifier Diodes」です。


製品の詳細 ( Datasheet PDF )

部品番号 VS-1N3766
部品説明 Power Silicon Rectifier Diodes
メーカ Vishay
ロゴ Vishay ロゴ 




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VS-1N3766 Datasheet, VS-1N3766 PDF,ピン配置, 機能
VS-1N1183, VS-1N3765, VS-1N1183A, VS-1N2128A Series
www.vishay.com
Vishay Semiconductors
Power Silicon Rectifier Diodes,
35 A, 40 A, 60 A
DO-203AB (DO-5)
PRODUCT SUMMARY
IF(AV)
Package
Circuit configuration
35 A, 40 A, 60 A
DO-203AB (DO-5)
Single diode
DESCRIPTION/FEATURES
• Low leakage current series
• Good surge current capability up to 1000 A
• Can be supplied to meet stringent military,
aerospace, and other high reliability
requirements
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
IF(AV)
IFSM
I2t
I2t
VRRM
TJ
TEST CONDITIONS
TC
50 Hz
60 Hz
50 Hz
60 Hz
Range
1N1183
35 (1)
140 (1)
480
500 (1)
1140
1040
16 100
50 to 600 (1)
-65 to 200
Note
(1) JEDEC® registered values
1N3765
35 (1)
140 (1)
380
400 (1)
730
670
10 300
700 to 1000 (1)
-65 to 200
1N1183A
40 (1)
150 (1)
765
800 (1)
2900
2650
41 000
50 to 600 (1)
-65 to 200
1N2128A
60 (1)
140 (1)
860
900 (1)
3700
3400
52 500
50 to 600 (1)
-65 to 200
UNITS
A
°C
A
A2s
A2s
V
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VS-1N1183
VS-1N1184
VS-1N1185
VS-1N1186
VS-1N1187
VS-1N1188
VS-1N1189
VS-1N1190
VS-1N3765
VS-1N3766
VS-1N3767
VS-1N3768
VS-1N1183A
VS-1N1184A
VS-1N1185A
VS-1N1186A
VS-1N1187A
VS-1N1188A
VS-1N1189A
VS-1N1190A
VS-1N2128A
VS-1N2129A
VS-1N2130A
VS-1N2131A
VS-1N2133A
VS-1N2135A
VS-1N2137A
VS-1N2138A
VRRM, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
(TJ = - 65 °C TO 200 °C (2))
V
50 (1)
100 (1)
150 (1)
200 (1)
300 (1)
400 (1)
500 (1)
600 (1)
700 (1)
800 (1)
900 (1)
1000 (1)
VRM, MAXIMUM DIRECT
REVERSE VOLTAGE
(TJ = - 65 °C TO 200 °C (2))
V
50 (1)
100 (1)
150 (1)
200 (1)
300 (1)
400 (1)
500 (1)
600 (1)
700 (1)
800 (1)
900 (1)
1000 (1)
Notes
• Basic type number indicates cathode to case. For anode to case, add “R” to part number, e.g., 1N1188R, 1N3766R, 1N1186RA, 1N2135RA
(1) JEDEC® registered values
(2) For 1N1183 Series and 1N3765 Series TC = - 65 °C to 190 °C
Revision: 28-Jan-14
1 Document Number: 93492
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1 Page





VS-1N3766 pdf, ピン配列
VS-1N1183, VS-1N3765, VS-1N1183A, VS-1N2128A Series
www.vishay.com
Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum operating
case temperature range
Maximum storage
temperature range
Maximum internal thermal
resistance, junction to case
Thermal resistance,
case to sink
SYMBOL
TC
TStg
RthJC
RthCS
Maximum allowable
mounting torque
(+ 0 %, - 10 %)
TEST CONDITIONS
1N1183 1N3765 1N1183A 1N2128A UNITS
- 65 to 190 (1)
- 65 to 175 (1)
- 65 to 200
- 65 to 200
°C
DC operation
Mounting surface, smooth, flat and greased
Not lubricated thread, tighting on nut (2)
Lubricated thread, tighting on nut (2)
Not lubricated thread, tighting on hexagon (3)
Lubricated thread, tighting on hexagon (3)
1.00 (1)
1.1 (1)
0.25
3.4 (30)
2.3 (20)
4.2 (37)
3.2 (28)
0.65 (1)
°C/W
N·m
(lbf · in)
Approximate weight
Case style
JEDEC®
17
0.6
DO-203AB (DO-5)
g
oz.
Notes
(1) JEDEC registered values®
(2) Recommended for pass-through holes
(3) Recommended for holed threaded heatsinks
190
180
Ø
170 Conduction Period
160
150
DC
140
+60 °C +120 °C +180 °C
130
120
110
100
0 10 20 30 40 50 60
Average Forward Current Over Full Cycle (A)
Fig. 1 - Maximum Allowable Case Temperature vs.
Average Forward Current, 1N1183 and 1N3765 Series
70
TJ = 190 °C
60
+60 °C +120 °C
50
+180 °C
40
DC
30
20
10
0
0
Ø
Conduction Period
10 20 30 40 50
Average Forward Current Over Full Cycle (A)
Fig. 2 - Typical Low Level Forward Power Loss vs.
Average Forward Current (Sinusoidal Current Waveform),
1N1183 and 1N3765 Series
Revision: 28-Jan-14
3 Document Number: 93492
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


3Pages


VS-1N3766 電子部品, 半導体
VS-1N1183, VS-1N3765, VS-1N1183A, VS-1N2128A Series
www.vishay.com
Vishay Semiconductors
104
103
102
101 TJ = 140 °C
TTJJ== 25 °°CC
1.0
01 2 34 5 67
Instantaneous Forward Voltage (V)
Fig. 15 - Maximum Forward Voltage vs. Forward Current,
1N2128A Series
Dimensions
LINKS TO RELATED DOCUMENTS
www.vishay.com/doc?95360
Revision: 28-Jan-14
6 Document Number: 93492
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
VS-1N3765

Power Silicon Rectifier Diodes

Vishay
Vishay
VS-1N3766

Power Silicon Rectifier Diodes

Vishay
Vishay
VS-1N3767

Power Silicon Rectifier Diodes

Vishay
Vishay
VS-1N3768

Power Silicon Rectifier Diodes

Vishay
Vishay


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