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VS-1N3213 の電気的特性と機能

VS-1N3213のメーカーはVishayです、この部品の機能は「Silicon Rectifier Diodes」です。


製品の詳細 ( Datasheet PDF )

部品番号 VS-1N3213
部品説明 Silicon Rectifier Diodes
メーカ Vishay
ロゴ Vishay ロゴ 




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VS-1N3213 Datasheet, VS-1N3213 PDF,ピン配置, 機能
www.vishay.com
VS-1N3208 Series
Vishay Semiconductors
Silicon Rectifier Diodes,
(Stud Version) 15 A
FEATURES
• Low thermal impedance
• High case temperature
• Excellent reliability
• Maximum design flexibility
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DO-203AB (DO-5)
PRODUCT SUMMARY
IF(AV)
Package
Circuit configuration
15 A
DO-203AB (DO-5)
Single diode
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IF(AV)
IFSM
TC
50 Hz
60 Hz
50 Hz
I2t
60 Hz
I2t
VRRM
TJ
Range
Note
(1) JEDEC® registered values
VALUES
15 (1)
150 (1)
239
250 (1)
286
260
3870
50 to 600
-65 to +175
UNITS
A
°C
A
A2s
A2s
V
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VS-1N3208
VS-1N3209
VS-1N3210
VS-1N3211
VS-1N3212
VS-1N3213
VS-1N3214
VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE VRM, MAXIMUM DIRECT REVERSE VOLTAGE
(TJ = -65 °C TO 175 °C)
(TJ = -65 °C TO 175 °C)
VV
50 (1)
50 (1)
100 (1)
100 (1)
200 (1)
200 (1)
300 (1)
300 (1)
400 (1)
400 (1)
500 (1)
500 (1)
600 (1)
600 (1)
Notes
(1) JEDEC registered values
• Basic type number indicates cathode to case. For anode to case, add “R” to part number, e.g. 1N3208R, 1N3209R
Revision: 12-Nov-15
1 Document Number: 93496
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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VS-1N3213 pdf, ピン配列
www.vishay.com
35
30
Ø
25 DC Conduction period
20
18
15
120°
10
60°
5
0
110 120 130 140 150 160 170 180
Maximum Allowable Case Temperature (°C)
Fig. 1 - Average Forward Current vs.
Maximum Allowable Case Temperature
250
At any rated load condition and
with rated VRRM following surge
200
150
50 Hz
60 Hz
100
1 2 4 6 8 10 20 40 60
Number of Equal Amplitude
Half Cycle Current Pulses (N)
Fig. 2 - Maximum Non-Repetitive Surge Current vs.
Number of Current Pulses
VS-1N3208 Series
Vishay Semiconductors
120
100 60°
90 18
80 120°
DC
70
60
50 TJ = 140 °C
40
30
20
Ø
Conduction period
10
0
0 10 20 30 40 50 60 70 80 90
Average Forward Current Over Full Cycle (A)
Fig. 3 - Maximum Low Level Forward Power Loss vs.
Average Forward Current
105
104 120°
18
103 60°
TJ = 140 °C
DC
102
Ø
Conduction period
10
10
102 103
104
Average Forward Current Over Full Cycle (A)
Fig. 4 - Maximum High Level Forward Power Loss vs.
Average Forward Current
103
Dimensions
102
TJ = 140 °C
10
TJ = 25 °C
1
01 2 345 67
Instantaneous Forward Voltage (V)
Fig. 5 - Maximum Forward Voltage vs. Forward Current
LINKS TO RELATED DOCUMENTS
www.vishay.com/doc?95360
Revision: 12-Nov-15
3 Document Number: 93496
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


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共有リンク

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部品番号部品説明メーカ
VS-1N3210

Silicon Rectifier Diodes

Vishay
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VS-1N3211

Silicon Rectifier Diodes

Vishay
Vishay
VS-1N3212

Silicon Rectifier Diodes

Vishay
Vishay
VS-1N3213

Silicon Rectifier Diodes

Vishay
Vishay


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