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PDF MMBTA70 Data sheet ( Hoja de datos )
| Número de pieza | MMBTA70 | |
| Descripción | GENERAL PURPOSE TRANSISTOR | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MMBTA70
CASE 318-02/03, STYLE 6
SOT-23 (TO-236AA/AB)
GENERAL PURPOSE TRANSISTOR
PNP SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Emitter-Base Voltage
—Collector Current Continuous
Symbol
vCEO
VEBO
'C
THERMAL CHARACTERISTICS
Characteristic
•Total Device Dissipation, TA = 25°C
Derate above 25°C
Symbol
PD
Storage Temperature
T stg
•Thermal Resistance Junction to Ambfent
R 6UA
"Package mounted on 99.5% alumina 10 x 8 x 0.6 mm.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
OFF CHARACTERISTICS
Characteristic
Collector-Emitter Breakdown Voltage
dC = 1-0 mAdc, Ib = 0)
Emitter-Base Breakdown Voltage
(lg = 100 ^Adc, lc = 0)
Collector Cutoff Current
(VCB = 30 Vdc, El = 0)
ON CHARACTERISTICS
DC Current Gain
(IC = 5.0 mAdc, Vce = 10 Vdc)
Collector-Emitter Saturation Voltage
(IC = 10 mAdc, Ib = 10 mAdc)
SMALL-SIGNAL CHARACTERISTICS
—Current-Gain Bandwidth Product
dC = 5.0 mAdc, Vce = 10 Vdc, f = 100 MHz)
Output Capacitance
(Vcb = 10 Vdc, El = 0, f = 100 kHz)
Symbol
v (BR)CEO
v (BR)EBO
!CBO
hFE
VCE(sat)
40
—
-
fT
Cobo
125
—
Value
40
4.0
100
Max
350
2.8
150
357
Max
100
400
0.25
-
4.0
Unit
Vdc
Vdc
mAdc
Unit
mW
mW/°C
°C
°C/W
Unit
Vdc
Vdc
-
,
Vdc
MHz
PF
3-110
1 page | ||
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| PDF Descargar | [ Datasheet MMBTA70.PDF ] | |
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