|
|
MMBTA56LのメーカーはON Semiconductorです、この部品の機能は「Driver Transistors」です。 |
部品番号 | MMBTA56L |
| |
部品説明 | Driver Transistors | ||
メーカ | ON Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとMMBTA56Lダウンロード(pdfファイル)リンクがあります。 Total 5 pages
MMBTA55L Series,
MMBTA56L Series,
SMMBTA56L Series
Driver Transistors
PNP Silicon
Features
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector −Emitter Voltage
MMBTA55
MMBTA56, SMMBTA56
VCEO
−60
−80
Vdc
Collector −Base Voltage
MMBTA55
MMBTA56, SMMBTA56
VCBO
−60
−80
Vdc
Emitter −Base Voltage
Collector Current − Continuous
THERMAL CHARACTERISTICS
VEBO
IC
−4.0
−500
Vdc
mAdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR− 5 Board
(Note 1) TA = 25°C
Derate above 25°C
PD
225 mW
1.8 mW/°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina
Substrate, (Note 2) TA = 25°C
Derate above 25°C
RqJA
PD
556 °C/W
300 mW
2.4 mW/°C
Thermal Resistance, Junction−to−Ambient RqJA
417 °C/W
Junction and Storage Temperature
TJ, Tstg −55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR− 5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
www.onsemi.com
SOT−23
CASE 318
STYLE 6
COLLECTOR
3
1
BASE
2
EMITTER
MARKING DIAGRAM
2xx M G
G
1
2xx = Device Code
x = H for MMBTA55LT1G
xx = GM for MMBTA56LT1G,
SMMBTA56LT1G
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
© Semiconductor Components Industries, LLC, 1994
October, 2016 − Rev. 8
1
Publication Order Number:
MMBTA55LT1/D
1 Page MMBTA55L Series, MMBTA56L Series, SMMBTA56L Series
200
VCE = -2.0 V
TJ = 25°C
100
70
50
30
20
-2.0 -3.0 -5.0 -7.0 -10
-20 -30 -50 -70 -100 -200
IC, COLLECTOR CURRENT (mA)
Figure 2. Current−Gain — Bandwidth Product
100
70 TJ = 25°C
50 Cibo
30
20
10
7.0
5.0
-0.1 -0.2
-0.5 -1.0 -2.0 -5.0 -10 -20
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Capacitance
Cobo
-50 -100
1.0 k
700
500
ts
300
200
100
70
50
30
VCC = -40 V
IC/IB = 10
20 IB1 = IB2
TJ = 25°C
10
-5.0 -7.0 -10
td @ VBE(off) = -0.5 V
-20 -30 -50 -70 -100
tf
tr
-200 -300
IC, COLLECTOR CURRENT (mA)
Figure 4. Switching Time
-500
1
IC/IB = 10
0.1
25°C
150°C
−55°C
0.01
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 6. Collector Emitter Saturation Voltage
vs. Collector Current
1
400
TJ = 125°C
200
25°C
VCE = -1.0 V
-55°C
100
80
60
40
-0.5 -1.0 -2.0
-5.0 -10 -20
-50 -100 -200
IC, COLLECTOR CURRENT (mA)
Figure 5. DC Current Gain
-500
1.1
1.0 IC/IB = 10
0.9
0.8 −55°C
0.7
0.6 25°C
0.5
0.4 150°C
0.3
0.2
0.0001
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 7. Base Emitter Saturation Voltage vs.
Collector Current
www.onsemi.com
3
3Pages | |||
ページ | 合計 : 5 ページ | ||
|
PDF ダウンロード | [ MMBTA56L データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
MMBTA56 | PNP General Purpose Amplifier | MCC |
MMBTA56 | PNP General Purpose Transistor | Bruckewell |
MMBTA56 | PNP GENERAL PURPOSE TRANSISTOR | LITE-ON |
MMBTA56 | SMD General Purpose Transistor | TAITRON |