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PDF MMBTA55 Data sheet ( Hoja de datos )
| Número de pieza | MMBTA55 | |
| Descripción | DRIVER TRANSISTOR | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MMBTA55,56
CASE 318-02/03, STYLE 6
SOT-23 (TO-236AA/AB)
DRIVER TRANSISTOR
PNP SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
Symbol
VCEO
VCBO
VEBO
"C
MMBTA55 MMBTA56
60 80
60 80
4.0
500
Unit
Vdc
Vdc
Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristic
"Total Device Dissipation, Ta = 25°C
Derate above 25°C
Symbol
PD
Storage Temperature
Tstq
"Thermal Resistance Junction to Ambient
R&JA
•Package mounted on 99.5% alumina 10 x 8 x 0.6 mm.
Max
350
2.8
150
357
Unit
mW
mW/°C
°C
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.!
OFF CHARACTERISTICS
Characteristic
Collector-Emitter Breakdown VoltageO)
(tC = 1.0 mAdc, Bl = 0)
Emitter-Base Breakdown Voltage
(IE = 100 ^Adc, cl = 0)
Collector Cutoff Current
(Vce = 60 Vdc, Bl = 0)
Collector Cutoff Current
(Vcb = 60 Vdc, El = 0)
(VcB = 80 Vdc, El = 0)
ON CHARACTERISTICS
DC Current Gain
(IC = 10 mAdc, Vce = 1.0 Vdc)
dC = 100 mAdc, Vce = 1.0 Vdc)
MMBTA55
MMBTA56
,,
MMBTA55
MMBTA56
Collector-Emitter Saturation Voltage
(IC = 100 mAdc, Ib = 10 mAdc)
Base-Emitter On Voltage
«C = 100 mAdc, Vce = 1.0 Vdc)
SMALL-SIGNAL CHARACTERISTICS
—Current-Gain Bandwidth Product(2)
(IC = 100 mAdc, Vce = 10 Vdc, f = 100 MHz)
(1) Pulse Test: Pulse Width « 300 /is. Duty Cycle s; 2.0%.
(2) fj is defined as the frequency at which |hfe | extrapolates to unity
Symbol
v (BR)CEO
v (BR)EBO
'CEO
'CBO
"FE
vCE(sat)
v BE(on)
<t
60
80
4.0
-
-
50
50
—
'
—
50
Max
-
-
0.1
0.1
0.1
-
0.25
1.2
-
Unit
Vdc
Vdc
/uAdc
/xAdc
-
Vdc
Vdc
MHz
3-108
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet MMBTA55.PDF ] | |
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