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MMBD2010T1 の電気的特性と機能

MMBD2010T1のメーカーはON Semiconductorです、この部品の機能は「Switching Diode」です。


製品の詳細 ( Datasheet PDF )

部品番号 MMBD2010T1
部品説明 Switching Diode
メーカ ON Semiconductor
ロゴ ON Semiconductor ロゴ 




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MMBD2010T1 Datasheet, MMBD2010T1 PDF,ピン配置, 機能
MMBD1010LT1
Switching Diode
Part of the GreenLinePortfolio of devices with
energyconserving traits.
This switching diode has the following features:
Very Low Leakage (500 pA) promotes extended battery life by
decreasing energy waste. Guaranteed leakage limit is for each diode
in the pair contingent upon the other diode being in a
nonforwardbiased condition.
Offered in four Surface Mount package types
Available in 8 mm Tape and Reel in quantities of 3,000
Applications
ESD Protection
Reverse Polarity Protection
Steering Logic
MediumSpeed Switching
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Continuous Reverse Voltage
Peak Forward Current
Peak Forward Surge Current
DEVICE MARKING
VR 30 Vdc
IF 200 mAdc
IFM
(surge)
500
mA
MMBD1010LT1 = A5
MMBD2010T1 = DP
MMBD3010T1 = XS
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-4 Board (1)
TA = 25°C
MMBD1010LT1,
MMBD3010T1
MMBD2010T1
Derate above 25°C MMBD1010LT1,
MMBD3010T1
MMBD2010T1
Symbol
PD
Max
225
150
1.8
1.2
Unit
mW
mW/°C
Thermal Resistance Junction to
Ambient
MMBD1010LT1,
MMBD3010T1
MMBD2010T1
RθJA
°C/W
556
833
Junction and Storage Temperature
TJ, Tstg 55 to +150
°C
(1) Device mounted on a FR-4 glass epoxy printed circuit board using the minimum
recommended footprint.
Preferred devices are Motorola recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2006
August, 2006 Rev. 2
1
http://onsemi.com
MMBD1010LT1
3
1
2
CASE 318-08, STYLE 9
SOT-23 (TO-236AB)
MMBD2010T1
3
1
2
CASE 419-02, STYLE 5
SC70/SOT323
MMBD3010T1
2
1
3
CASE 318D-04, STYLE 3
SC59
3
CATHODE
ANODE
1
2
ANODE
Publication Order Number:
MMBD1010LT1/D

1 Page





MMBD2010T1 pdf, ピン配列
MMBD1010LT1
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to insure proper solder connection
0.037
0.95
0.037
0.95
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
0.037
0.95
0.037
0.95
0.039
1.0
0.098-0.118
2.5-3.0
0.094
2.4
0.031
0.8
SC59
inches
mm
0.035
0.9
0.079
2.0
0.031
0.8
SOT23
inches
mm
0.025
0.65
0.025
0.65
0.035
0.9
0.075
1.9
0.028
0.7
SC70/SOT323
inches
mm
ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ 2.36
0.093
4.19
0.165
0.91
ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ0.036
1.22
0.048
mm
inches
SOD123
POWER DISSIPATION FOR A SURFACE MOUNT DEVICE
The power dissipation for a surface mount device is a
function of the drain/collector pad size. These can vary
from the minimum pad size for soldering to a pad size given
for maximum power dissipation. Power dissipation for a
surface mount device is determined by TJ(max), the
maximum rated junction temperature of the die, RθJA, the
thermal resistance from the device junction to ambient, and
the operating temperature, TA. Using the values provided
on the data sheet, PD can be calculated as follows:
PD =
TJ(max) TA
RθJA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values
into the equation for an ambient temperature TA of 25°C,
one can calculate the power dissipation of the device. For
example, for a SOT23 device, PD is calculated as follows.
PD =
150°C 25°C
556°C/W
= 225 milliwatts
The 556°C/W for the SOT23 package assumes the use
of the recommended footprint on a glass epoxy printed
circuit board to achieve a power dissipation of 250
milliwatts. There are other alternatives to achieving higher
power dissipation from the surface mount packages. One is
to increase the area of the drain/collector pad. By
increasing the area of the drain/collector pad, the power
dissipation can be increased. Although the power
dissipation can almost be doubled with this method, area is
taken up on the printed circuit board which can defeat the
purpose of using surface mount technology.
Another alternative would be to use a ceramic substrate
or an aluminum core board such as Thermal Clad. Using
a board material such as Thermal Clad, an aluminum core
board, the power dissipation can be doubled using the
same footprint.
http://onsemi.com
3


3Pages


MMBD2010T1 電子部品, 半導体
MMBD1010LT1
PACKAGE DIMENSIONS
A
L
3
BS
12
VG
C
DH
CASE 31808
ISSUE AF
SOT23 (TO236AB)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIUMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
KJ
INCHES
DIM MIN MAX
A 0.1102 0.1197
B 0.0472 0.0551
C 0.0350 0.0440
D 0.0150 0.0200
G 0.0701 0.0807
H 0.0005 0.0040
J 0.0034 0.0070
K 0.0140 0.0285
L 0.0350 0.0401
S 0.0830 0.1039
V 0.0177 0.0236
MILLIMETERS
MIN MAX
2.80 3.04
1.20 1.40
0.89 1.11
0.37 0.50
1.78 2.04
0.013 0.100
0.085 0.177
0.35 0.69
0.89 1.02
2.10 2.64
0.45 0.60
STYLE 9:
PIN 1.
2.
3.
ANODE
ANODE
CATHODE
A
L
3
S
1
B
2
VD
G
CASE 41902
ISSUE H
SC70/SOT323
0.05 (0.002)
H
C RN
J
K
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
INCHES
DIM MIN MAX
A 0.071 0.087
B 0.045 0.053
C 0.035 0.049
D 0.012 0.016
G 0.047 0.055
H 0.000 0.004
J 0.004 0.010
K 0.017 REF
L 0.026 BSC
N 0.028 REF
R 0.031 0.039
S 0.079 0.087
V 0.012 0.016
MILLIMETERS
MIN MAX
1.80 2.20
1.15 1.35
0.90 1.25
0.30 0.40
1.20 1.40
0.00 0.10
0.10 0.25
0.425 REF
0.650 BSC
0.700 REF
0.80 1.00
2.00 2.20
0.30 0.40
STYLE 5:
PIN 1. ANODE
2. ANODE
3. CATHODE
A
L
S3
21
B
D
G
C
H
CASE 318D04
ISSUE F
SC59
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
MILLIMETERS
INCHES
DIM MIN MAX MIN MAX
A 2.70 3.10 0.1063 0.1220
B 1.30 1.70 0.0512 0.0669
C 1.00 1.30 0.0394 0.0511
D 0.35 0.50 0.0138 0.0196
G 1.70 2.10 0.0670 0.0826
H 0.013 0.100 0.0005 0.0040
J 0.09 0.18 0.0034 0.0070
K 0.20 0.60 0.0079 0.0236
L 1.25 1.65 0.0493 0.0649
J S 2.50 3.00 0.0985 0.1181
STYLE 3:
K
PIN 1. ANODE
2. ANODE
3. CATHODE
http://onsemi.com
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部品番号部品説明メーカ
MMBD2010T1

Switching Diode

ON Semiconductor
ON Semiconductor
MMBD2010T1

Switching Diode

Motorola Semiconductors
Motorola Semiconductors


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