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PDF VN10LM Data sheet ( Hoja de datos )
| Número de pieza | VN10LM | |
| Descripción | TMOS FET Transistor | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de VN10LM (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
TMOS FET Transistor
N–Channel — Enhancement
3 DRAIN
2
GATE
1 SOURCE
Order this document
by VN10LM/D
VN10LM
1
23
CASE 29–05, STYLE 22
TO–92 (TO–226AE)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain – Source Voltage
Gate–Source Voltage
— Continuous
— Non–repetitive (tp ≤ 50 µs)
Drain Current – Continuous(1)
– Pulsed(2)
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VDSS
VGS
VGSM
ID
IDM
PD
60 Vdc
± 20 Vdc
± 40 Vpk
0.3 Adc
1.0
1.0 Watts
8.0 mW/°C
Operating and Storage
Temperature Range
TJ, Tstg
– 40 to +150
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0, ID = 100 µA)
Zero–Gate–Voltage Drain Current
(VDS = 45 V, VGS = 0)
Gate–Body Leakage Current
(VGS = –15 V, VDS = 0)
Gate–Body Leakage Current
(VGS = 15 V, VDS = 0)
V(BR)DSS
IDSS
IGSS1
IGSS2
v1. The Power Dissipation of the package may result in a lower continuous drain current.
2. Pulse Width 300 µs, Duty Cycle.
Min
60
—
—
—
Typ Max Unit
— — Vdc
0.1 10 µAdc
— 100 nAdc
—
–100
nAdc
TMOS is a registered trademark of Motorola, Inc.
REV 1
©MMotootorroollaa,
Small–Signal
Inc. 1997
Transistors,
FETs
and
Diodes
Device
Data
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet VN10LM.PDF ] | |
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