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PDF MMBT2222A Data sheet ( Hoja de datos )
| Número de pieza | MMBT2222A | |
| Descripción | NPN Silicon Switching Transistor | |
| Fabricantes | Infineon | |
| Logotipo |  |
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 1. NPN Planar Transistor - Cystek  Hay una vista previa y un enlace de descarga de MMBT2222A (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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NPN Silicon Switching Transistor
• Low collector-emitter saturation voltage
• Complementary type:
SMBT2907A / MMBT2907A (PNP)
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
SMBT2222A/MMBT2222A
32
1
Type
Marking
SMBT2222A/MMBT2222A s1P
Pin Configuration
1=B
2=E
3=C
Package
SOT23
Maximum Ratings
Parameter
Symbol
Value
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Total power dissipation-
TS ≤ 77 °C
Junction temperature
Storage temperature
VCEO
VCBO
VEBO
IC
Ptot
Tj
Tstg
40
75
6
600
330
150
-65 ... 150
Thermal Resistance
Parameter
Symbol
Value
Junction - soldering point1)
RthJS
≤ 220
1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)
Unit
V
mA
mW
°C
Unit
K/W
1 2011-08-19
1 page  
SMBT2222A/MMBT2222A
DC current gain hFE = ƒ(IC)
VCE = 10 V
10 3 SMBT 2222/A
5
h FE
10 2
5
150 ˚C
25 ˚C
-50 ˚C
EHP00743
Saturation voltage IC = ƒ(VBEsat; VCEsat)
hFE = 10
10 3 SMBT 2222/A
mA
ΙC
10 2
VCE
5
EHP00742
VBE
10 1
5
10 0
5
10 1
10 -1
10 0
10 1
10 2 mA 10 3
ΙC
Transition frequency fT = ƒ(IC)
VCE = 20 V
10 -1
0
0.2 0.4 0.6 0.8 1.0 V 1.2
VBE sat ,VCE sat
Collector-base capacitance Ccb = ƒ(VCB)
Emitter-base capacitance Ceb = ƒ(VEB)
10 3 SMBT 2222/A
MHz
fT
EHP00741
35
pF
2
10 2
5
2
101
10 0
5 10 1
25
20
15
5 10 2 mA 5 10 3
ΙC
10
5
00
5
CEB
CCB
5 10 15 V 25
VCB(VEB
2011-08-19
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet MMBT2222A.PDF ] | |
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