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S29C51001B の電気的特性と機能

S29C51001BのメーカーはSyncMOSです、この部品の機能は「1 MEGABIT / 5 VOLT CMOS FLASH MEMORY」です。


製品の詳細 ( Datasheet PDF )

部品番号 S29C51001B
部品説明 1 MEGABIT / 5 VOLT CMOS FLASH MEMORY
メーカ SyncMOS
ロゴ SyncMOS ロゴ 




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S29C51001B Datasheet, S29C51001B PDF,ピン配置, 機能
SyncMOS Technologies Inc.
S29C51001T/S29C51001B
1 MEGABIT (131,072 x 8 BIT)
5 VOLT CMOS FLASH MEMORY
Features
s 128Kx8-bit Organization
s Address Access Time: 70, 90, 120 ns
s Single 5V ± 10% Power Supply
s Sector Erase Mode Operation
s 8KB Boot Block (lockable)
s 512 bytes per Sector, 256 Sectors
– Sector-Erase Cycle Time: 10ms (Max)
– Byte-Program Cycle Time: 20µs (Max)
s Minimum 10,000 Erase-Program Cycles
s Low power dissipation
– Active Read Current: 20mA (Typ)
– Active Program Current: 30mA (Typ)
– Standby Current: 100µA (Max)
s Hardware Data Protection
s Low VCC Program Inhibit Below 3.2V
s Self-timed program/erase operations with end-
of-cycle detection
– DATA Polling
– Toggle Bit
s CMOS and TTL Interface
s Available in two versions
S29C51001T (Top Boot Block)
S29C51001B (Bottom Boot Block)
s Packages:
– 32-pin Plastic DIP
– 32-pin TSOP-I
– 32-pin PLCC
Description
The S29C51001T/S29C51001B is a high speed
131,072 x 8 bit CMOS flash memory. Programming
or erasing the device is done with a single 5 Volt
power supply. The device has separate chip enable
CE, program enable WE, and output enable OE
controls to eliminate bus contention.
The S29C51001T/S29C51001B offers a combi-
nation of features: Boot Block with Sector Erase
Mode. The end of program/erase cycle is detected
by DATA Polling of I/O7 or by the Toggle Bit I/O6.
The S29C51001T/S29C51001B features a
sector erase operation which allows each sector to
be erased and reprogrammed without affecting
data stored in other sectors. The device also
supports full chip erase.
Boot block architecture enables the device to
boot from a protected sector loaded either at the
top (S29C51001T) or the bottom (S29C51001B)
sector. All inputs and outputs are CMOS and TTL
compatible.
The S29C51001T/S29C51001B is ideal for
applications that require updatable code and data
storage.
S29C51001T/S29C51001B V1.0 February 2003
1

1 Page





S29C51001B pdf, ピン配列
SyncMOS Technologies Inc.
Functional Block Diagram
X-Decoder
S29C51001T/S29C51001B
1 MEGABIT (131,072 x 8 BIT)
5 VOLT CMOS FLASH MEMORY
1,048,576 Bit
Memory Cell Array
A0–A16
Address buffer & latches
Y-Decoder
CE
OE Control Logic
WE
I/O Buffer & Data Latches
I/O0–I/O7
51001-05
Capacitance (1,2)
Symbol Parameter
CIN Input Capacitance
COUT
Output Capacitance
CIN2
Control Pin Capacitance
NOTE:
1. Capacitance is sampled and not 100% tested.
2. TA = 25°C, VCC = 5V ± 10%, f = 1 MHz.
Latch Up Characteristics(1)
Test mSetup
VIN = 0
VOUT = 0
VIN = 0
Parameter
Input Voltage with Respect to GND on A9, OE
Input Voltage with Respect to GND on I/O, address or control pins
VCC Current
NOTE:
1. Includes all pins except VCC. Test conditions: VCC = 5V, one pin at a time.
Min.
-1
-1
-100
Typ.
6
8
8
Max.
8
12
10
Max.
+13
VCC + 1
+100
Units
pF
pF
pF
Unit
V
V
mA
AC Test Load
Device Under
Test
CL = 100 pF
S29C51001T/S29C51001B V1.0 February 2003
+5.0 V
IN3064
or Equivalent
2.7 k
6.2 k
3
IN3064 or Equivalent
IN3064 or Equivalent
IN3064 or Equivalent
51001-06


3Pages


S29C51001B 電子部品, 半導体
SyncMOS Technologies Inc.
Waveforms of Read Cycle
ADDRESS
CE
OE
WE
I/O
HIGH-Z
tRC
tAA
tCE
tOE
tOLZ
tCLZ
tOH
VALID DATA OUT
tAA
S29C51001T/S29C51001B
1 MEGABIT (131,072 x 8 BIT)
5 VOLT CMOS FLASH MEMORY
tDF
VALID DATA OUT
HIGH-Z
51001-07
Waveforms of WE Controlled-Program Cycle
ADDRESS
CE
3rd bus cycle
tWC tAS
5555H
PA
tCH tAH
PA(2)
OE
tOES
WE
tCS
I/O
tWP tWHWH1
tWPH
tDS
tDH
A0H
PD(3)
I/O7(1) DOUT
NOTES:
1. I/O7: The output is the complement of the data written to the device.
2. PA: The address of the memory location to be programmed.
3. PD: The data at the byte address to be programmed.
tRC
tDF
tOE
tOH
51001-08
S29C51001T/S29C51001B V1.0 February 2003
6

6 Page



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共有リンク

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部品番号部品説明メーカ
S29C51001B

1 MEGABIT / 5 VOLT CMOS FLASH MEMORY

SyncMOS
SyncMOS
S29C51001T

1 MEGABIT / 5 VOLT CMOS FLASH MEMORY

SyncMOS
SyncMOS


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