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PDF S29C51001T Data sheet ( Hoja de datos )

Número de pieza S29C51001T
Descripción 1 MEGABIT / 5 VOLT CMOS FLASH MEMORY
Fabricantes SyncMOS 
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SyncMOS Technologies Inc.
S29C51001T/S29C51001B
1 MEGABIT (131,072 x 8 BIT)
5 VOLT CMOS FLASH MEMORY
Features
s 128Kx8-bit Organization
s Address Access Time: 70, 90, 120 ns
s Single 5V ± 10% Power Supply
s Sector Erase Mode Operation
s 8KB Boot Block (lockable)
s 512 bytes per Sector, 256 Sectors
– Sector-Erase Cycle Time: 10ms (Max)
– Byte-Program Cycle Time: 20µs (Max)
s Minimum 10,000 Erase-Program Cycles
s Low power dissipation
– Active Read Current: 20mA (Typ)
– Active Program Current: 30mA (Typ)
– Standby Current: 100µA (Max)
s Hardware Data Protection
s Low VCC Program Inhibit Below 3.2V
s Self-timed program/erase operations with end-
of-cycle detection
– DATA Polling
– Toggle Bit
s CMOS and TTL Interface
s Available in two versions
S29C51001T (Top Boot Block)
S29C51001B (Bottom Boot Block)
s Packages:
– 32-pin Plastic DIP
– 32-pin TSOP-I
– 32-pin PLCC
Description
The S29C51001T/S29C51001B is a high speed
131,072 x 8 bit CMOS flash memory. Programming
or erasing the device is done with a single 5 Volt
power supply. The device has separate chip enable
CE, program enable WE, and output enable OE
controls to eliminate bus contention.
The S29C51001T/S29C51001B offers a combi-
nation of features: Boot Block with Sector Erase
Mode. The end of program/erase cycle is detected
by DATA Polling of I/O7 or by the Toggle Bit I/O6.
The S29C51001T/S29C51001B features a
sector erase operation which allows each sector to
be erased and reprogrammed without affecting
data stored in other sectors. The device also
supports full chip erase.
Boot block architecture enables the device to
boot from a protected sector loaded either at the
top (S29C51001T) or the bottom (S29C51001B)
sector. All inputs and outputs are CMOS and TTL
compatible.
The S29C51001T/S29C51001B is ideal for
applications that require updatable code and data
storage.
S29C51001T/S29C51001B V1.0 February 2003
1

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S29C51001T pdf
SyncMOS Technologies Inc.
AC Electrical Characteristics
(over all temperature ranges)
Read Cycle
Parameter
Name
tRC
tAA
tACS
tOE
tCLZ
tOLZ
tDF
tOH
Parameter
Read Cycle Time
Address Access Time
Chip Enable Access Time
Output Enable Access Time
CE Low to Output Active
OE Low to Output Active
Output Enable or Chip Disable to Output
in High Z
Output Hold from Address Change
Program (Erase/Program) Cycle
Parameter
Name
tWC
tAS
tAH
tCS
tCH
tOES
tOEH
tWP
tWPH
tDS
tDH
tWHWH1
tWHWH2
tWHWH3
Parameter
Program Cycle Time
Address Setup Time
Address Hold Time
CE Setup Time
CE Hold Time
OE Setup Time
OE High Hold Time
WE Pulse Width
WE Pulse Width High
Data Setup Time
Data Hold Time
Programming Cycle
Sector Erase Cycle
Chip Erase Cycle
S29C51001T/S29C51001B
1 MEGABIT (131,072 x 8 BIT)
5 VOLT CMOS FLASH MEMORY
-70
Min. Max.
70
70
70
35
0—
0—
0 20
-90
Min. Max.
90
90
90
45
0—
0—
0 30
-120
Min. Max.
——
——
——
——
——
——
——
Unit
ns
ns
ns
ns
ns
ns
ns
0 — 0 — — — ns
-70 -90 -120
Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Unit
70 — — 90 — — — — — ns
0 — — 0 — — — — — ns
45 — — 45 — — — — — ns
0 — — 0 — — — — — ns
0 — — 0 — — — — — ns
0 — — 0 — — — — — ns
0 — — 0 — — — — — ns
35 — — 45 — — — — — ns
35 — — 38 — — — — — ns
25 — — 30 — — — — — ns
0 — — 0 — — — — — ns
— — 20 — — 20 — — — us
— — 10 — — 10 — — — ms
3
— —3 — —— —s
S29C51001T/S29C51001B V1.0 February 2003
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S29C51001T arduino
SyncMOS Technologies Inc.
Boot Block Protection
The S29C51001T/S29C51001B features
hardware Boot Block Protection. The boot block
sector protection is enabled when high voltage
(12.5V) is applied to OE and A9 pins with CE pin
LOW and WE pin lOW. The sector protection is
desabled when high voltage is applied to OE, CE
and A9 pins with WE pin LOW. Other pins can be
HIGH or LOW. This is shown in table 1.
Autoselect
The S29C51001T/S29C51001B features an
Autoselect mode to identify the Boot Block
(protected/unprotected), the Device (Top/Bottom),
and the manufacturer ID.
To get to the Autoselect mode, a high voltage
(VH) must be applied to the A9 pin. Once the A9
signal is returned to LOW or HIGH, the device will
return to the previous mode.
Boot Block Protection Status
In Autoselect mode, performing a read at
address 3CXX2H or address 0CXX2H will indicate
if the Top Boot Block sector or the Bottom Boot
Block sector is locked out. If the data is 01H, the
Top/Bottom Boot Block is protected. If the data is
00H, the Top/Bottom Boot Block is unprotected.
(see Table 3.)
S29C51001T/S29C51001B
1 MEGABIT (131,072 x 8 BIT)
5 VOLT CMOS FLASH MEMORY
Device ID
In Autoselect mode, performing a read at
address XXXXH will determine whether the device
is a Top Boot Block device or a Bottom Boot Block
device. If the data is 01H, the device is a Top Boot
Block. If the data is A1H, the device is a Bottom
Boot Block device (see Table 3).
In addition, the device ID can also be read via the
command register when the device is erased or
programmed in a system without applying high
voltage to the A9 pin. When A0 is HIGH, the device
ID is presented at the outputs.
Manufacturer ID
In Autoselect mode, performing a read at
address. XXXX0H will determine the manufacturer
ID. 40H is the manufacturer code for SyncMOS
Flash.
In addition the manufacturer ID can also be read
via the command register when the device is
erased or programmed in a system without
applying high voltage to the A9 pin. when A0 is
LOW, the manufacturer ID is presented at the
outputs.
Hardware Data Protection
VCC Sense Protection: the program operation is
inhibited when VCC is less than 2.5V.
Noise Protection: a CE or WE pulse of less than
5ns will not initiate a program cycle.
Program Inhibit Protection: holding any one of
OE LOW, CE HIGH or WE HIGH inhibits a program
cycle.
Table 3. Autoselect Decoding
Decoding Mode
Boot Block
Boot Block Protection
Top
Bottom
Device ID
Top
Bottom
Manufacture ID
NOTE:
1. X = Don’t Care, VIH = HIGH, VIL = LOW.
Address
A0 A1 A2–A13 A14–A16 Data I/O0–I/O7
VIL VIH X VIH 01H: protected
VIL VIH X VIL 00H: unprotected
VIH VIL
X
X 01H
A1H
VIL VIL
X
X 40H
S29C51001T/S29C51001B V1.0 February 2003
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