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VN2110 の電気的特性と機能

VN2110のメーカーはSupertexです、この部品の機能は「N-Channel Enhancement-Mode Vertical DMOS FETs」です。


製品の詳細 ( Datasheet PDF )

部品番号 VN2110
部品説明 N-Channel Enhancement-Mode Vertical DMOS FETs
メーカ Supertex
ロゴ Supertex ロゴ 




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VN2110 Datasheet, VN2110 PDF,ピン配置, 機能
Supertex inc.
VN2110
N-Channel Enhancement-Mode
Vertical DMOS FET
Features
►Free from secondary breakdown
►Low power drive requirement
►Ease of paralleling
►Low CISS and fast switching speeds
►High input impedance and high gain
Applications
►Motor controls
Converters
Amplifiers
Switches
►Power supply circuits
►Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
General Description
This low threshold, enhancement-mode (normally-off)
transistor utilizes a vertical DMOS structure and Supertex’s
well-proven, silicon-gate manufacturing process. This
combination produces a device with the power handling
capabilities of bipolar transistors and the high input impedance
and positive temperature coefficient inherent in MOS devices.
Characteristic of all MOS structures, this device is free
from thermal runaway and thermally-induced secondary
breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide
range of switching and amplifying applications where very
low threshold voltage, high breakdown voltage, high input
impedance, low input capacitance, and fast switching speeds
are desired.
Ordering Information
Product Summary
Part Number
Package Option
Packing
VN2110K1-G
TO-236AB (SOT-23) 3000/Reel
-G denotes a lead (Pb)-free / RoHS compliant package.
Contact factory for Wafer / Die availablity.
Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.
Absolute Maximum Ratings
Parameter
Value
BVDSS/BVDGS
100V
Pin Configuration
DRAIN
RDS(ON)
(max)
4.0Ω
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
BVDSS
BVDGS
±20V
Operating and storage temperature -55OC to +150OC
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
SOURCE
GATE
TO-236AB (SOT-23)
Product Marking
Typical Thermal Resistance
Package
θja
TO-236AB (SOT-23)
203OC/W
N1AW
W = Code for Week Sealed
= “Green” Packaging
Package may or may not include the following marks: Si or
TO-236AB (SOT-23)
Doc.# DSFP-VN2110
B082013
Supertex inc.
www.supertex.com

1 Page





VN2110 pdf, ピン配列
Typical Performance Curves
BVDSS Variation with Temperature
1.1
1.0
0.9
-50
0 50 100
Tj (OC)
Transfer Characteristics
2.0
VDS = 25V
150
1.6
TA = -55OC
1.2
0.8
25OC
125OC
0.4
0
0 2.0 4.0 6.0 8.0 10
VGS (volts)
Capacitance vs. Drain-to-Source Voltage
50
f = 1.0MHz
CISS
25
COSS
CRSS
0
0 10 20 30 40
VDS (volts)
VN2110
On-Resistance vs. Drain Current
10
VGS = 5.0V
8.0
VGS = 10V
6.0
4.0
2.0
0
0 0.5 1.0 1.5 2.0 2.5
ID (amperes)
VGS(th) and RDS(ON) Variation with Temperature
2.0
1.4
RDS(ON) @ 10V, 0.5A
1.6
1.2
1.2
1.0
VGS(th) @ 1.0mA
0.8
0.8
0.4
0.6
-50 0
0
50 100 150
Tj (OC)
Gate Drive Dynamic Characteristics
10
VDS = 10V
8.0
6.0
90 pF
VDS = 40V
4.0
2.0
30 pF
0 0 0.2 0.4 0.6 0.8 1.0
QG (nanocoulombs)
Doc.# DSFP-VN2110
B082013
Supertex inc.
3 www.supertex.com


3Pages





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部品番号部品説明メーカ
VN2110

N-Channel Enhancement-Mode Vertical DMOS FETs

Supertex
Supertex


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