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GS66504BのメーカーはGaN Systemsです、この部品の機能は「650V enhancement mode GaN transistor」です。 |
部品番号 | GS66504B |
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部品説明 | 650V enhancement mode GaN transistor | ||
メーカ | GaN Systems | ||
ロゴ | |||
このページの下部にプレビューとGS66504Bダウンロード(pdfファイル)リンクがあります。 Total 3 pages
GS66502B, GS66504B
650V enhancement mode GaN transistors
PRELIMINARY DATASHEET
Features
– 650V enhancement mode power switch
– Ultra low FOM Island Technology™ die
– Low inductance GaNPX™ package
– Reverse current capability
– Integral source sense
– Zero reverse recovery loss
– RoHS 6 compliant
Applications
– On-board battery chargers
– Appliance and motor inverters and IPMs
– AC-DC power supplies (PFC & primary)
– VHF small form factor power adapters
– High frequency, high efficiency power
conversion
top view
D
GS
Absolute Maximum Ratings (Tcase = 25˚C except as noted)
Parameters
Operating Junction Temperature
Storage Temperature Range
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current (Tcase=25°C)
Continuous Drain Current (Tcase=100°C)
Pulsed Drain Current (Tcase=25°C)
Thermal Characteristics (Typical values unless otherwise noted)
Parameters
Thermal Resistance (junction to case)
Maximum Soldering Temperature (MSL3 rated)
Symbol
TJ
TS
VDS
VGS
IDS(cont)25
IDS(cont)100
ID‚pulse
Value
-55 to +150
-55 to +150
650
±10
GS66502B GS66504B
7 15
5 11
15 30
Units
°C
°C
V
V
A
A
A
Symbol
RΘJC
TSOLD
Value
GS66502B GS66504B
21
260
Units
°C /W
°C
Preliminary – Rev 150406
© 2009-2015 GaN Systems Inc.
1
This information pertains to a product under development. Its characteristics and specifications are subject to change without notice.
1 Page Package Dimensions
GS66502B, GS66504B
650V enhancement mode GaN transistors
PRELIMINARY DATASHEET
www.gansystems.com
North America Europe Asia
Important Notice – Unless expressly approved in writing by an authorized representative of GaN Systems, GaN Systems components are not designed,
authorized or warranted for use in lifesaving, life sustaining, military, aircraft, or space applications, nor in products or systems where failure or malfunction may
result in personal injury, death, or property or environmental damage. The information given in this document shall not in any event be regarded as a guarantee of
performance. GaN Systems hereby disclaims any or all warranties and liabilities of any kind, including but not limited to warranties of non-infringement of
intellectual property rights. All other brand and product names are trademarks or registered trademarks of their respective owners. Information provided herein
is intended as a guide only and is subject to change without notice. The information contained herein or any use of such information does not grant, explicitly, or
implicitly, to any party any patent rights, licenses, or any other intellectual property rights. GaN Systems standard terms and conditions apply.
© 2009-2015 GaN Systems Inc. All rights reserved.
Preliminary – Rev 150406
© 2009-2015 GaN Systems Inc.
3
This information pertains to a product under development. Its characteristics and specifications are subject to change without notice.
3Pages | |||
ページ | 合計 : 3 ページ | ||
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PDF ダウンロード | [ GS66504B データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
GS66504B | 650V enhancement mode GaN transistor | GaN Systems |