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GS66504B の電気的特性と機能

GS66504BのメーカーはGaN Systemsです、この部品の機能は「650V enhancement mode GaN transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 GS66504B
部品説明 650V enhancement mode GaN transistor
メーカ GaN Systems
ロゴ GaN Systems ロゴ 




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GS66504B Datasheet, GS66504B PDF,ピン配置, 機能
GS66502B, GS66504B
650V enhancement mode GaN transistors
PRELIMINARY DATASHEET
Features
650V enhancement mode power switch
Ultra low FOM Island Technologydie
Low inductance GaNPXpackage
Reverse current capability
Integral source sense
Zero reverse recovery loss
RoHS 6 compliant
Applications
On-board battery chargers
Appliance and motor inverters and IPMs
AC-DC power supplies (PFC & primary)
VHF small form factor power adapters
High frequency, high efficiency power
conversion
top view
D
GS
Absolute Maximum Ratings (Tcase = 25˚C except as noted)
Parameters
Operating Junction Temperature
Storage Temperature Range
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current (Tcase=25°C)
Continuous Drain Current (Tcase=100°C)
Pulsed Drain Current (Tcase=25°C)
Thermal Characteristics (Typical values unless otherwise noted)
Parameters
Thermal Resistance (junction to case)
Maximum Soldering Temperature (MSL3 rated)
Symbol
TJ
TS
VDS
VGS
IDS(cont)25
IDS(cont)100
ID‚pulse
Value
-55 to +150
-55 to +150
650
±10
GS66502B GS66504B
7 15
5 11
15 30
Units
°C
°C
V
V
A
A
A
Symbol
RΘJC
TSOLD
Value
GS66502B GS66504B
21
260
Units
°C /W
°C
Preliminary – Rev 150406
© 2009-2015 GaN Systems Inc.
1
This information pertains to a product under development. Its characteristics and specifications are subject to change without notice.

1 Page





GS66504B pdf, ピン配列
Package Dimensions
GS66502B, GS66504B
650V enhancement mode GaN transistors
PRELIMINARY DATASHEET
www.gansystems.com
North America – Europe – Asia
Important Notice – Unless expressly approved in writing by an authorized representative of GaN Systems, GaN Systems components are not designed,
authorized or warranted for use in lifesaving, life sustaining, military, aircraft, or space applications, nor in products or systems where failure or malfunction may
result in personal injury, death, or property or environmental damage. The information given in this document shall not in any event be regarded as a guarantee of
performance. GaN Systems hereby disclaims any or all warranties and liabilities of any kind, including but not limited to warranties of non-infringement of
intellectual property rights. All other brand and product names are trademarks or registered trademarks of their respective owners. Information provided herein
is intended as a guide only and is subject to change without notice. The information contained herein or any use of such information does not grant, explicitly, or
implicitly, to any party any patent rights, licenses, or any other intellectual property rights. GaN Systems standard terms and conditions apply.
© 2009-2015 GaN Systems Inc. All rights reserved.
Preliminary – Rev 150406
© 2009-2015 GaN Systems Inc.
3
This information pertains to a product under development. Its characteristics and specifications are subject to change without notice.


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部品番号部品説明メーカ
GS66504B

650V enhancement mode GaN transistor

GaN Systems
GaN Systems


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