GS66508P Datasheet PDF - GaN Systems
| Part Number | GS66508P | |
| Description | 650V enhancement mode GaN transistor | |
| Manufacturers | GaN Systems | |
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GS66508P
650V enhancement mode GaN transistor
PRELIMINARY DATASHEET
Features
– 650V enhancement mode power switch
– Ultra low FOM Island Technology™ die
– Low inductance GaNPX™ package
– Reverse current capability
– Zero reverse recovery charge
– Source-sense for optimal high speed design
– RoHS 6 compliant
Applications
– On-board battery chargers
– 400V DC-DC conversion
– Inverters, UPS, and VFD motor drive
– AC-DC power supplies (PFC & primary)
– VHF small form factor power adapters
– High frequency, high efficiency power
conversion
top view
D
G TP*
SS
S
* TP = thermal pad. TP is internally connected
to the substrate and must be connected
externally to the source (S)
D
G
SS S
Absolute Maximum Ratings (Tcase = 25˚C except as noted)
Parameters
Operating Junction Temperature
Storage Temperature Range
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current (Tcase=25°C) (Note 1)
Continuous Drain Current (Tcase=100°C)
Pulsed Drain Current (Tcase=25°C) (Note 2)
(1) Saturation imposes current limit.
(2) Pulse width is limited by TJ(max).
Symbol
TJ
TS
VDS
VGS
IDS(cont)25
IDS(cont)100
ID‚pulse
Value
-55 to +150
-55 to +150
650
±10
30
23
60
Units
°C
°C
V
V
A
A
A
Thermal Characteristics (Typical values unless otherwise noted)
Parameters
Symbol
Value
Units
Thermal Resistance (junction to case)
Thermal Resistance (junction to ambient) (Note 3)
RΘJC
0.5
°C /W
RΘJA
51
Maximum Soldering Temperature (MSL3 rated)
TSOLD 260 °C
(3) Device mounted on 40mm x 40mm x 1.5mm single layer epoxy PCB FR4 with 6cm2 copper area (thickness 70μm) for thermal pad
connection. PCB is vertical without air stream cooling. For optimized thermal designs, refer to Application Note GN005 “Thermal Analysis
and PCB Design Guidelines for GaN Enhancement Mode Power Switching Transistors” .
Ordering information
Part number
GS66508P
GS66508P
Package type
GaNPX
GaNPX
Ordering code
GS66508P-TR
GS66508P-MR
Packing method
Tape-and-reel
Mini-reel
Preliminary – Rev 150406
© 2009-2015 GaN Systems Inc.
1
This information pertains to a product under development. Its characteristics and specifications are subject to change without notice.
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GS66508P
650V enhancement mode GaN transistor
PRELIMINARY DATASHEET
90
80
25oC
70
60
50
40
150oC
30
20
10
0
0246
VGS (V)
Fig 9. Transfer characteristic
8
80
TJ=25oC
70
60
50 VGS=7V
40
VGS=0V
30 VGS=-2V
20
10
0
0.0 2.0 4.0 6.0 8.0
VSD (V)
Fig 10. Reverse conduction characteristic
10.0
600 7
500
400
300
CISS
200
100
0
0
COSS
CRSS
100 200 300 400 500
Voltage (V)
Fig 11. Capacitances @ Tj = 25°C
6
5
100V
400V
4
3
2
1
0
0246
QG (nC)
Fig 12. Gate charge @ Tj = 25°C
8
Preliminary – Rev 150406
© 2009-2015 GaN Systems Inc.
5
This information pertains to a product under development. Its characteristics and specifications are subject to change without notice.
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for GS66508P electronic component. |
| Information | Total 6 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ GS66508P.PDF Datasheet ] | |
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