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GA06JT12-247 の電気的特性と機能

GA06JT12-247のメーカーはGeneSiCです、この部品の機能は「Junction Transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 GA06JT12-247
部品説明 Junction Transistor
メーカ GeneSiC
ロゴ GeneSiC ロゴ 




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GA06JT12-247 Datasheet, GA06JT12-247 PDF,ピン配置, 機能
 
Normally – OFF Silicon Carbide
Junction Transistor
Features
175 °C Maximum Operating Temperature
Gate Oxide Free SiC Switch
Exceptional Safe Operating Area
Excellent Gain Linearity
Temperature Independent Switching Performance
Low Output Capacitance
Positive Temperature Coefficient of RDS,ON
Suitable for Connecting an Anti-parallel Diode
Advantages
Compatible with Si MOSFET/IGBT Gate Drive ICs
> 20 µs Short-Circuit Withstand Capability
Lowest-in-class Conduction Losses
High Circuit Efficiency
Minimal Input Signal Distortion
High Amplifier Bandwidth
Package
RoHS Compliant
D
GA06JT12-247
VDS
RDS(ON)
ID @ Tc=150°C
hFE Tc=25°C
=
=
=
=
1200 V
200 m
6A
54
D
S
GD
G
S
TO-247AB
 
Applications
Down Hole Oil Drilling, Geothermal Instrumentation
Hybrid Electric Vehicles (HEV)
Solar Inverters
Switched-Mode Power Supply (SMPS)
Power Factor Correction (PFC)
Induction Heating
Uninterruptible Power Supply (UPS)
Motor Drives
Absolute Maximum Ratings
Parameter
Drain – Source Voltage
Continuous Drain Current
Continuous Gate Current
Turn-Off Safe Operating Area
Short Circuit Safe Operating Area
Reverse Gate – Source Voltage
Reverse Drain – Source Voltage
Power Dissipation
Storage Temperature
Symbol
VDS
ID
IGM
RBSOA
SCSOA
VSG
VSD
Ptot
Tstg
Conditions
VGS = 0 V
TC = 150 °C
TVJ = 175 oC, IG = 1 A,
Clamped Inductive Load
TVJ = 175 oC, IG = 1 A, VDS = 800 V,
Non Repetitive
TC = 150 °C
Value
1200
6
1.5
ID,max = 6
@ VDS VDSmax
20
30
40
24
-55 to 175
Unit
V
A
A
A
Notes
Fig. 19
Fig. 16
µs
V
V
W Fig. 14
°C
Electrical Characteristics
Parameter
On State Characteristics 
Drain – Source On Resistance
Gate Forward Voltage
DC Current Gain
Off State Characteristics 
Drain Leakage Current
Gate Leakage Current
Symbol
Conditions
Min.
Value
Typical
Max. Unit
Notes
RDS(ON)
VGS(FWD)
hFE
ID = 6 A, Tj = 25 °C
ID = 6 A, Tj = 125 °C
ID = 6 A, Tj = 175 °C
IG = 500 mA, Tj = 25 °C
IG = 500 mA, Tj = 175 °C
VDS = 5 V, ID = 6 A, Tj = 25 °C
VDS = 5 V, ID = 6 A, Tj = 175 °C
200
280 mFig. 5
370
3.1
2.9
V Fig. 4
53
33
– Fig. 5
VR = 1200 V, VGS = 0 V, Tj = 25 °C
0.5
IDSS VR = 1200 V, VGS = 0 V, Tj = 125 °C 1 μA Fig. 6
VR = 1200 V, VGS = 0 V, Tj = 175 °C
2
ISG VSG = 20 V, Tj = 25 °C
20 nA
Aug 2014
http://www.genesicsemi.com/commercial-sic/sic-junction-transistors/
Pg1 of 10 

1 Page





GA06JT12-247 pdf, ピン配列
GA06JT12-247
 
Figure 3: Typical Output Characteristics at 175 °C
Figure 4: Typical Gate Source I-V Characteristics vs.
Temperature
Figure 5: Normalized On-Resistance and Current Gain vs.
Temperature
Figure 6: Typical Blocking Characteristics
Figure 7: Input, Output, and Reverse Transfer Capacitance
Figure 8: Output Capacitance Stored Energy
Aug 2014
http://www.genesicsemi.com/commercial-sic/sic-junction-transistors/
Pg3 of 10 


3Pages


GA06JT12-247 電子部品, 半導体
 
Driving the GA06JT12-247
GA06JT12-247
A: Gate Drive Theory of Operation
The SJT is a current controlled transistor which requires a positive gate current for turn-on as well as to remain in on-state. An ideal gate
current waveform for ultra-fast switching of the SJT, while maintaining low gate drive losses, is shown in Figure 21.
 
Figure 21: Idealized Gate Current Waveform  
A:1: Gate Currents, IG,pk/-IG,pk and Voltages during Turn-On and Turn-Off
An SJT is rapidly switched from its blocking state to on-state, when the necessary gate charge, QG, for turn-on is supplied by a burst of high
gate current, IG,on, until the gate-source capacitance, CGS, and gate-drain capacitance, CGD, are fully charged.
,
The IG,pon pulse should ideally terminate, when the drain voltage falls to its on-state value, in order to avoid unnecessary drive losses during
the steady on-state. In practice, the rise time of the IG,on pulse is affected by the parasitic inductances, Lpar in the TO-247 package and drive
circuit. A voltage developed across the parasitic inductance in the source path, Ls, can de-bias the gate-source junction, when high drain
currents begin to flow through the device. The applied gate voltage should be maintained high enough, above the VGS,ON level to counter
these effects.
A high negative peak current, -IG,off is recommended at the start of the turn-off transition, in order to rapidly sweep out the injected carriers from
the gate, and achieve rapid turn-off. While satisfactory turn off can be achieved with VGS = 0 V, a negative gate voltage VGS may be used in
order to speed up the turn-off transition.
A:2: Steady On-State
After the device is turned on, IG may be advantageously lowered to IG,steady for reducing unnecessary gate drive losses. The IG,steady is
determined by noting the DC current gain, hFE, of the device.
The desired IG,steady is determined by the peak device junction temperature TJ during operation, drain current ID, DC current gain hFE, and a
50 % safety margin to ensure operating the device in the saturation region with low on-state voltage drop by the equation:
, , 1.5
 
  
Aug 2014
http://www.genesicsemi.com/commercial-sic/sic-junction-transistors/
Pg6 of 10 

6 Page



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部品番号部品説明メーカ
GA06JT12-247

Junction Transistor

GeneSiC
GeneSiC


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