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GA50JT17-247 の電気的特性と機能

GA50JT17-247のメーカーはGeneSiCです、この部品の機能は「Junction Transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 GA50JT17-247
部品説明 Junction Transistor
メーカ GeneSiC
ロゴ GeneSiC ロゴ 




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GA50JT17-247 Datasheet, GA50JT17-247 PDF,ピン配置, 機能
Normally OFF Silicon Carbide
Junction Transistor
Features
175 °C Maximum Operating Temperature
Gate Oxide Free SiC Switch
Exceptional Safe Operating Area
Excellent Gain Linearity
Temperature Independent Switching Performance
Low Output Capacitance
Positive Temperature Coefficient of RDS,ON
Suitable for Connecting an Anti-parallel Diode
Advantages
Compatible with Si MOSFET/IGBT Gate Drive ICs
> 20 µs Short-Circuit Withstand Capability
Lowest-in-class Conduction Losses
High Circuit Efficiency
Minimal Input Signal Distortion
High Amplifier Bandwidth
Package
RoHS Compliant
D
GA50JT17-247
VDS
RDS(ON)
ID (Tc = 25°C)
ID (Tc > 125°C)
hFE (Tc = 25°C)
=
=
=
=
=
1700 V
20 mΩ
100 A
50 A
104
G DS
TO-247
Applications
Down Hole Oil Drilling, Geothermal Instrumentation
Hybrid Electric Vehicles (HEV)
Solar Inverters
Switched-Mode Power Supply (SMPS)
Power Factor Correction (PFC)
Induction Heating
Uninterruptible Power Supply (UPS)
Motor Drives
Table of Contents
Section I: Absolute Maximum Ratings ...........................................................................................................1
Section II: Static Electrical Characteristics....................................................................................................2
Section III: Dynamic Electrical Characteristics .............................................................................................2
Section IV: Figures ...........................................................................................................................................3
Section V: Driving the GA50JT17-247.............................................................................................................7
Section VI: Package Dimensions ................................................................................................................. 11
Section VII: SPICE Model Parameters ......................................................................................................... 12
Section I: Absolute Maximum Ratings
Parameter
Drain Source Voltage
Continuous Drain Current
Continuous Drain Current
Continuous Gate Current
Turn-Off Safe Operating Area
Short Circuit Safe Operating Area
Reverse Gate Source Voltage
Reverse Drain Source Voltage
Power Dissipation
Storage Temperature
Symbol
VDS
ID
ID
IG
RBSOA
SCSOA
VSG
VSD
Ptot
Tstg
VGS = 0 V
TC = 25°C
TC = 145°C
Conditions
TVJ = 175 oC,
Clamped Inductive Load
TVJ = 175 oC, IG = 1 A, VDS = 1200 V,
Non Repetitive
TC = 25 °C / 145 °C, tp > 100 ms
Value
1700
100
50
3.5
ID,max = 50
@ VDS ≤ VDSmax
>20
30
25
583 / 116
-55 to 175
Unit
V
A
A
A
A
Notes
Fig. 17
Fig. 17
Fig. 19
µs
V
V
W Fig. 16
°C
Jan 2015
http://www.genesicsemi.com/commercial-sic/sic-junction-transistors/
Pg 1 of 11

1 Page





GA50JT17-247 pdf, ピン配列
Section IV: Figures
A: Static Characteristic Figures
GA50JT17-247
Figure 1: Typical Output Characteristics at 25 °C
Figure 2: Typical Output Characteristics at 150 °C
Figure 3: Typical Output Characteristics at 175 °C
Figure 4: On-Resistance vs. Gate Current
Figure 5: DC Current Gain and Normalized On-Resistance
vs. Temperature
Figure 6: DC Current Gain vs. Drain Current
Jan 2015
http://www.genesicsemi.com/commercial-sic/sic-junction-transistors/
Pg 3 of 11


3Pages


GA50JT17-247 電子部品, 半導体
GA50JT17-247
Figure 19: Turn-Off Safe Operating Area
Figure 20: Transient Thermal Impedance
Figure 21: Drain Current Derating vs. Pulse Width
Jan 2015
http://www.genesicsemi.com/commercial-sic/sic-junction-transistors/
Pg 6 of 11

6 Page



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部品番号部品説明メーカ
GA50JT17-247

Junction Transistor

GeneSiC
GeneSiC


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