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MDA0531E の電気的特性と機能

MDA0531EのメーカーはMagnaChipです、この部品の機能は「N-Channel Trench MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 MDA0531E
部品説明 N-Channel Trench MOSFET
メーカ MagnaChip
ロゴ MagnaChip ロゴ 




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MDA0531E Datasheet, MDA0531E PDF,ピン配置, 機能
MDA0531E
Common-Drain N-Channel Trench MOSFET 30V, 8A, 19m
General Description
The MDA0531E uses advanced MagnaChip’s MOSFET
Technology, which provides low on-state resistance, high
switching performance and excellent reliability. Low
RDS(ON) and low gate charge operation with gate voltage
as low as 2.5V.
Features
VDS = 30V
ID = 8.0A @ VGS = 10V
RDS(ON)
< 19mΩ @ VGS = 4.5V
< 20mΩ @ VGS = 4.0V
< 22mΩ @ VGS = 3.8V
< 25mΩ @ VGS = 3.1V
< 31mΩ @ VGS = 2.5V
Applications
Unidirectional or Bi-directional Load Switch
Lithium-Ion Battery Packs
Portable Battery Protection Module
Absolute Maximun Ratings (Ta = 25oC)
Drain-Source Voltage
Gate-Source Voltage
Characteristics
Continuous Drain Current
Pulse Drain Current
Power Dissipation for Single Operation(1)
Junction and Storage Temperature Range
TA=25oC
TA=70oC
TA=25oC
TA=70oC
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient(Steady-State) (1)
Thermal Resistance, Junction-to-Case(2)
January 2010. Version 2.3
1
Symbol
VDSS
VGSS
ID
IDM
PDSM
TJ, Tstg
Rating
30
±12
8
6.5
65
1.7
1.0
-55~150
Units
V
V
A
A
A
W
oC
Symbol
RθJA
RθJC
Rating
75
6
Unit
oC/W
MagnaChip Semiconductor Ltd.

1 Page





MDA0531E pdf, ピン配列
30
10V
25
20
2.5V
3V
4V
15
VGS=2V
10
5
0
01234
VDS, Drain-Source Voltage [V]
Fig.1 On-Region Characteristics
5
40
30
VGS=2.5V
20 V =4.5V
GS
VGS=10V
10
0
0 5 10 15 20
ID, Drain Current [A]
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
1.8
V =4.5V
1.6
VGS=10V
GS
ID=6A
ID=8A
1.4
VGS=2.5V
ID=3A
1.2
1.0
0.8
0
25 50 75 100 125 150
TJ, Junction Temperature [oC]
Fig.3 On-Resistance Variation with
Temperature
20
Notes :
VDS = 5V
15
175
10
125
5
25
0
0.0 0.5 1.0 1.5 2.0
VGS, Gate-Source Voltage [V]
Fig.5 Transfer Characteristics
2.5
60
50
40
30 TA = 125
20
TA = 25
10
0
02468
VGS, Gate to Source Volatge [V]
Fig.4 On-Resistance Variation with
Gate to Source Voltage
101
Notes :
VGS = 0V
100
10
10-1
10-2
125
25
10-3
10-4
0.0
0.2 0.4 0.6 0.8 1.0
VSD, Source-Drain voltage [V]
1.2
Fig.6 Body Diode Forward Voltage Variation
with Source Current and Temperature
January 2010. Version 2.3
3 MagnaChip Semiconductor Ltd.


3Pages


MDA0531E 電子部品, 半導体
Worldwide Sales Support Locations
U.S.A
Sunnyvale Office
787 N. Mary Ave. Sunnyvale
CA 94085 U.S.A
Tel : 1-408-636-5200
Fax : 1-408-213-2450
Chicago Office
2300 Barrington Road, Suite 330
Hoffman Estates, IL 60195 U.S.A
Tel : 1-847-882-0951
Fax :1-847-882-0998
U.K
Knyvett House The Causeway,
Staines Middx, TW18 3BA,U.K.
Tel : +44 (0) 1784-898-8000
Fax : +44 (0) 1784-895-115
Japan
Tokyo Office
Shinbashi 2-chome MT bldg
4F 2-5-5 Shinbashi, Minato-ku
Tokyo, 105-0004 Japan
Tel : 81-3-3595-0632
Fax : 81-3-3595-0671
Osaka Office
3F, Shin-Osaka MT-2 Bldg
3-5-36 Miyahara Yodogawa-Ku
Osaka, 532-0003 Japan
Tel : 81-6-6394-8224
Fax : 81-6-6394-8282
Taiwan R.O.C
2F, No.61, Chowize Street, Nei Hu
Taipei,114 Taiwan R.O.C
Tel : 886-2-2657-7898
Fax : 886-2-2657-8751
China
Hong Kong Office
Office 03, 42/F, Office Tower Convention Plaza
1 Harbour Road, Wanchai, Hong Kong
Tel : 852-2828-9700
Fax : 852-2802-8183
Shenzhen Office
Room 1803, 18/F
International Chamber of Commerce Tower
Fuhua 3Road, Futian District
ShenZhen, China
Tel : 86-755-8831-5561
Fax : 86-755-8831-5565
Shanghai Office
Ste 1902, 1 Huaihai Rd. (C) 20021
Shanghai, China
Tel : 86-21-6373-5181
Fax : 86-21-6373-6640
Korea
891, Daechi-Dong, Kangnam-Gu
Seoul, 135-738 Korea
Tel : 82-2-6903-3451
Fax : 82-2-6903-3668 ~9
DISCLAIMER:
The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.
MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product.
is a registered trademark of MagnaChip
Semiconductor Ltd.
January 2010. Version 2.3
6 MagnaChip Semiconductor Ltd.

6 Page



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共有リンク

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部品番号部品説明メーカ
MDA0531E

N-Channel Trench MOSFET

MagnaChip
MagnaChip


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