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MDA0531EのメーカーはMagnaChipです、この部品の機能は「N-Channel Trench MOSFET」です。 |
部品番号 | MDA0531E |
| |
部品説明 | N-Channel Trench MOSFET | ||
メーカ | MagnaChip | ||
ロゴ | |||
このページの下部にプレビューとMDA0531Eダウンロード(pdfファイル)リンクがあります。 Total 6 pages
MDA0531E
Common-Drain N-Channel Trench MOSFET 30V, 8A, 19mΩ
General Description
The MDA0531E uses advanced MagnaChip’s MOSFET
Technology, which provides low on-state resistance, high
switching performance and excellent reliability. Low
RDS(ON) and low gate charge operation with gate voltage
as low as 2.5V.
Features
VDS = 30V
ID = 8.0A @ VGS = 10V
RDS(ON)
< 19mΩ @ VGS = 4.5V
< 20mΩ @ VGS = 4.0V
< 22mΩ @ VGS = 3.8V
< 25mΩ @ VGS = 3.1V
< 31mΩ @ VGS = 2.5V
Applications
Unidirectional or Bi-directional Load Switch
Lithium-Ion Battery Packs
Portable Battery Protection Module
Absolute Maximun Ratings (Ta = 25oC)
Drain-Source Voltage
Gate-Source Voltage
Characteristics
Continuous Drain Current
Pulse Drain Current
Power Dissipation for Single Operation(1)
Junction and Storage Temperature Range
TA=25oC
TA=70oC
TA=25oC
TA=70oC
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient(Steady-State) (1)
Thermal Resistance, Junction-to-Case(2)
January 2010. Version 2.3
1
Symbol
VDSS
VGSS
ID
IDM
PDSM
TJ, Tstg
Rating
30
±12
8
6.5
65
1.7
1.0
-55~150
Units
V
V
A
A
A
W
oC
Symbol
RθJA
RθJC
Rating
75
6
Unit
oC/W
MagnaChip Semiconductor Ltd.
1 Page 30
10V
25
20
2.5V
3V
4V
15
VGS=2V
10
5
0
01234
VDS, Drain-Source Voltage [V]
Fig.1 On-Region Characteristics
5
40
30
VGS=2.5V
20 V =4.5V
GS
VGS=10V
10
0
0 5 10 15 20
ID, Drain Current [A]
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
1.8
V =4.5V
1.6
VGS=10V
GS
ID=6A
ID=8A
1.4
VGS=2.5V
ID=3A
1.2
1.0
0.8
0
25 50 75 100 125 150
TJ, Junction Temperature [oC]
Fig.3 On-Resistance Variation with
Temperature
20
※ Notes :
VDS = 5V
15
175
10
125℃
5
25℃
0
0.0 0.5 1.0 1.5 2.0
VGS, Gate-Source Voltage [V]
Fig.5 Transfer Characteristics
2.5
60
50
40
30 TA = 125℃
20
TA = 25℃
10
0
02468
VGS, Gate to Source Volatge [V]
Fig.4 On-Resistance Variation with
Gate to Source Voltage
101
※ Notes :
VGS = 0V
100
10
10-1
10-2
125℃
25℃
10-3
10-4
0.0
0.2 0.4 0.6 0.8 1.0
VSD, Source-Drain voltage [V]
1.2
Fig.6 Body Diode Forward Voltage Variation
with Source Current and Temperature
January 2010. Version 2.3
3 MagnaChip Semiconductor Ltd.
3Pages Worldwide Sales Support Locations
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DISCLAIMER:
The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.
MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product.
is a registered trademark of MagnaChip
Semiconductor Ltd.
January 2010. Version 2.3
6 MagnaChip Semiconductor Ltd.
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部品番号 | 部品説明 | メーカ |
MDA0531E | N-Channel Trench MOSFET | MagnaChip |